Screen Holdings Co., Ltd.

Toru Endo

Masahiro Miyagi

Nobuyuki Shibayama

Masayuki Hayashi

Koji Hashimoto

Takahiro Yamaguchi

Jun Sawashima

Kenichiro Arai

Kenji Kawaguchi

Rikuta Aoki

Kota Tanikawa

Hirofumi Masuhara

Hideji Naohara

Yuji Okita

Hiroaki Takahashi

Hiroaki Kakuma

Tatsuya Masui

Tatsuya Fujii

Katsuei Higashi

Ryuta Tsukahara

Akira Ishimaru

Yuta Yamanouchi

Yuta Segawa

Tsung Ju Lin

A substrate processing method includes a substrate holding step of holding a substrate at a holding position surrounded by a cylindrical guard, a processing liquid supplying step of supplying a processed surface of the substrate with a processing liquid with which the processed surface of the substrate is processed while rotating the substrate held at the holding position about a rotation axis passing through a central portion of the substrate, an image acquiring step of acquiring an image of the processed surface of the substrate and an image of an inner wall surface of the guard while supplying the processing liquid to the processed surface of the substrate, and a detecting step of monitoring luminance values of the images obtained in the image acquiring step, and detecting a processing end time point at which processing of the processed surface of the substrate with the processing liquid is ended.

Substrate treatment method and substrate treatment device

A substrate processing apparatus includes a rotational holding member that rotates a substrate around a predetermined rotational axis while holding the substrate, a liquid supply member that supplies a liquid to the substrate held by the rotational holding member, and a resin-made tubular guard that surrounds the substrate held by the rotational holding member. The tubular guard has an inner peripheral surface and an uneven portion disposed at the inner peripheral surface. The uneven portion has a plurality of recessed portions and a plurality of protruding portions placed between the recessed portions adjacent to each other. The recessed portion has a width smaller than a diameter of a liquid droplet scattering from the substrate held by the rotational holding member and a depth in which the liquid droplet does not come into contact with a bottom portion of the recessed portion in a state in which the liquid droplet is in contact with the protruding portions. The protruding portion has a width that is smaller than the diameter of the liquid droplet and that is smaller than the width of the recessed portion.

Substrate processing apparatus and method of machining tubular guard

The substrate processing apparatus includes: a nozzle having a spout and adapted to spout SPM from the spout toward a substrate; a mixing portion communicating with the spout; a sulfuric acid-containing liquid supply device which recovers liquid supplied to and expelled from the substrate held by a substrate holding unit, prepares a sulfuric acid-containing liquid from the recovered liquid, and supplies the prepared sulfuric acid-containing liquid to the mixing portion; and a control device. The control device performs: a sulfuric acid-containing liquid preparing step of recovering SPM supplied to and expelled from the substrate and preparing the sulfuric acid-containing liquid; and an SPM spouting step of supplying the prepared sulfuric acid-containing liquid and hydrogen peroxide water to the mixing portion, mixing the sulfuric acid-containing liquid and hydrogen peroxide water together in the mixing portion to prepare SPM, and spouting the prepared SPM from the spout.

Substrate processing device and substrate processing method

A substrate processing apparatus includes a chemical liquid nozzlethat includes a chemical liquid discharge portdischarging a chemical liquid in a chemical liquid discharge direction D, inclined with respect to an upper surface of a substrate W, toward a target position Pwithin the upper surface of the substrate W, a spray shieldthat includes a shield surfacedirectly opposing the upper surface of the substrate W and with which the shield surfaceoverlaps with the target position Pin plan view and, when the chemical liquid nozzleand the shield surfaceare viewed from below, all portions of the chemical liquid discharge portare disposed at an outer side of an outer edge of the shield surfaceor on the outer edge of the shield surface, and a nozzle moving unitthat moves the chemical liquid nozzletogether with the spray shield

Substrate processing method and substrate processing apparatus

A substrate processing method includes a substrate holding step of holding a substrate in a horizontal attitude, a chemical liquid supply step of supplying a chemical liquid to a main surface of the substrate while rotating the substrate around a vertical rotational axis that passes through a central portion of the substrate, a processing-height maintaining step of maintaining a cylindrical first guard that captures a chemical liquid expelled from the substrate at a processing height position in parallel with the chemical liquid supply step, and a cleaning-height maintaining step of maintaining the first guard at a cleaning height position set below the processing height position in parallel with the chemical liquid supply step after the processing-height maintaining step.

Substrate processing apparatus

A first SPM, prepared by mixing sulfuric acid and hydrogen peroxide water at a first mixing ratio, is supplied to a substrate. A second SPM, prepared by mixing the sulfuric acid and the hydrogen peroxide water at a second mixing ratio greater than the first mixing ratio, is supplied to the substrate after the supply of the first SPM is stopped. The first SPM expelled from the substrate flows into a drain piping. The second SPM expelled from the substrate flows into a recovery piping. SPM is prepared by mixing the hydrogen peroxide water with sulfuric acid contained in the second SPM guided by the recovery piping.

A substrate processing method includes a substrate holding step of holding a substrate by a substrate holding unit, a chemical liquid supplying step of supplying a chemical liquid to a main surface of the substrate while rotating the substrate around a rotational axis passing through a central portion of the substrate, a foreign matter detecting step of detecting foreign matter, contained in the chemical liquid expelled from the substrate, in parallel with the chemical liquid supplying step, and a flow destination switching step of switching, based on the detection of the foreign matter by the foreign matter detecting step, a flow destination of the chemical liquid expelled from the substrate from a drain piping to a recovery piping during the chemical liquid supplying step.

In equipment that supplies a processing liquid on a top surface of a substrate while holding the substrate horizontally in a chamber a generation status of fumes is determined. Specifically, an image of a predetermined imaging area in the chamber is captured. Then, the generation status of fumes in the chamber is determined based on luminance values of the captured image acquired by the capturing of an image. Accordingly, it is possible to quantitatively determine whether a generation status of fumes in a chamber is normal.

Fume determination method, substrate processing method, and substrate processing equipment

In a substrate processing apparatus, with an internal space of a chamber brought into a pressurized atmosphere, an etching process is performed by continuously supplying a first processing liquid onto an upper surface of a substrate while rotating the substrate. It is thereby possible to suppress vaporization of the first processing liquid on the substrate and further suppress a decrease in the temperature of the substrate due to the heat of vaporization as it goes from a center portion of the substrate toward a peripheral portion thereof as compared with under normal pressure. As a result, it is possible to improve the uniformity in the temperature of the upper surface of the substrate during the etching process using the first processing liquid and improve the uniformity of etching over the entire upper surface of the substrate.

Substrate processing apparatus and substrate processing method

A substrate processing apparatus comprising a substrate holding rotating mechanism, a process liquid supply mechanism having a nozzle for dispensing a process liquid toward a principal face of the substrate, a processing liquid reservoir for holding sufficient process liquid to form a liquid film covering the whole principal face of the substrate, a liquid film forming unit for forming the liquid film by supplying the process liquid onto the principal face of the substrate in a single burst, and a control unit for controlling the liquid film forming unit and the process liquid supply mechanism such that the process liquid is dispensed from the process liquid nozzle toward the principal face of the substrate after formation of the liquid film covering the whole area of the principal face of the substrate by the liquid film forming unit.

In a substrate processing apparatus, with an internal space of a chamber brought into a reduced pressure atmosphere, a first processing liquid is supplied onto an upper surface of a substrate while the substrate is rotated, and the first processing liquid is thereby quickly spread from a center portion toward a peripheral portion on the upper surface of the substrate. It is thereby possible to coat the upper surface of the substrate with the first processing liquid in a shorter time as compared with under normal pressure. Further, by sucking the first processing liquid from the vicinity of an edge of the substrate, it is possible to coat the upper surface of the substrate with the first processing liquid in a still shorter time. As a result, it is possible to shorten the time required for the processing of the substrate.

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Kyoto, Japan

Toru Endo