Semiconductor Components Industries, LLC

Sanyo Electric Co., Ltd.

Sanyo Semiconductor Co., Ltd.

Toru Dan

Atsushi Wada

Shigeto Kobayashi

Mayumi Nakasato

Shigeharu Matsushita

Haruo Kobayashi

Hideaki Fujiwara

Kazuhiro Sasada

Makoto Izumi

Naofumi Sakai

Yoshiyuki Ishizuka

Masahiro Oda

Nobuo Takahashi

Masashi Aramomi

Shinya Naito

Tomoyuki Tanabe

Yoshiyasu Kaneko

Various embodiments of the present technology comprise a method and apparatus for a class-D amplifier. In various embodiments, the class-D amplifier operates to control an output signal during a start-up state to suppress a pop noise (start-up noise) without the need for a mute switch. The class-D amplifier may utilize a transition signal during the start-up state to prime or otherwise stabilize the output signal to suppress the pop noise.

Methods and apparatus for a class-D amplifier

In one form, a spread spectrum clock generator includes a clock generator and a modulator. The clock generator modulates a frequency of a reference clock signal using a modulation signal to provide a spread spectrum clock signal. The clock generator has a characteristic transfer function that varies with values of a parameter. The modulator generates the modulation signal according to a desired profile conditioned by an inverse of the characteristic transfer function of the clock generator at a current value of the parameter.

Calibration for spread spectrum clock generator and method therefor

A semiconductor device (npn bipolar transistor) includes an n-type collector layer, a base layer constituted by a pdiffusion layer, a SiGe layer and a p-type silicon film, an n-type emitter layer and a charge transport prevention film formed between the n-type collector layer and the n-type emitter layer and having an effect as a potential barrier with respect to either electrons or holes.

Semiconductor device

In an ADPLL circuit, on the basis of a gain of a digitally controlled oscillator estimated when a loop gain of a certain value is set in the loop filter and on the basis of a device parameter of the digitally controlled oscillator, the DCO gain estimation unit estimates a gain of the digitally controlled oscillator when a loop gain of another value is set in the loop filter.

PLL circuit, and radio communication apparatus equipped with same

The present invention quickly detects an offset and prevents cutoff of low frequency signals. Offset detection circuits smooth an output of a variable gain amplifier at a predetermined time constant and detects the offset, which is a DC component. The detected offset is added to the input of the variable gain amplifier by an adder and the offset in the output of the variable gain amplifier is corrected. The time constant in the offset detection circuit is changed by the resistance values of the variable resistors. Then, the time constant is changed to a small time constant when the gain of the variable gain amplifier is changed and thereafter to a large time constant.

Offset correction circuit

A capacitor array circuit receives a plurality of input signals, generate a single output signal by combining the plurality of input signals, and output the single output signal. A comparator receives the output signal of the capacitor array circuit. A current source, which is disposed between a predetermined fixed voltage source and an output terminal of the switched-capacitor circuit, supplies the current to the output terminal until the output signal of the comparator changes. A plurality of input capacitors in the capacitor array circuit receives a plurality of input signals in parallel with each other. At least one additional regulating capacitor in the capacitor array circuit store the charge to compensate for an offset component caused by the delay in the comparator. The respective output terminals of the plurality of input capacitors and the at least one additional regulating capacitor are combined into one.

Switched-capacitor circuit having a capacitor array circuit, and analog-to-digital converter using said switched-capacitor circuit

A memory capable of suppressing disturbance causing disappearance of data in a nonselected memory cell is provided. This memory comprises a memory cell array including a bit line, a word line arranged to intersect with the bit line and memory cells connected between the bit line and the word line, for accessing a selected memory cell thereby deteriorating a remanent polarization in an arbitrary memory cell and thereafter performing recovery for recovering all memory cells to remanent polarizations immediately after a write operation or remanent polarizations subjected to single application of a voltage applied to a nonselected memory cell in the access.

Memory

A method of fabricating a semiconductor device capable of improving reliability of a gate insulator film is obtained. This method of fabricating a semiconductor device comprises a step of forming a gate insulator film on the main surface of a semiconductor layer by heat treatment, and the step of forming the gate insulator film includes a step of performing the heat treatment in an atmosphere containing oxidizing gas at a temperature exceeding the temperature causing viscous flow of the gate insulator film thereby forming the gate insulator film on the main surface of the semiconductor layer.

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Gifu, Japan

Toru Dan