Infineon Technologies Ag

Agility Communications, Inc.

Osram Opto Semi-conductors Gmbh Co. Ohg

Torsten Wipiejewski

Larry Allen Coldren

Michael C Larson

Peter Kozodoy

A photonic device designed with an intermittent absorption profile along a waveguide. The absorption profile is divided into low-absorption and high-absorption segments that are distributed axially in order to decrease the maximum local temperature in the device. The distribution of low-absorption segments can be controlled through techniques such as proton implantation or selective-area quantum well intermixing. The lengths of low-absorption and high-absorption segments can be adjusted to optimize heat dissipation along the device length.

Photonic device with segmented absorption design

The present invention describes methods and apparatus for reliably assuring that correct mirror currents are selected during a channel switch to achieve the desired wavelength channel, based on feedback from either internal or external means combined with a mode map obtained at a time zero calibration.

Methods for robust channel switching of widely-tunable sampled-grating distributed bragg reflector lasers

A vertical resonator laser diode and a method for fabricating it are described. Electrical connecting contacts can be disposed on a common main surface of the laser diode, for example its light exit side. For this purpose, in the course of the fabrication method, a contact-making zone is produced by indiffusion of impurity atoms, by which zone that side of the pn junction which is remote from the main surface can be electrically conductively connected to the main surface and be provided with a corresponding connecting contact.

Vertical resonator laser diode containing coplanar electrical connecting contacts

A method and an apparatus for shaping semiconductor surfaces, in which a semiconductor wafer with a surface to be shaped is clamped in-between two plates. In which case at least one plate has a negative form with respect to the desired form to be formed in a semiconductor surface and the semiconductor surface is pressed by the plates at an elevated temperature. The method can be used particularly advantageously for fabricating concave microlens structures in semiconductor surfaces.

Method and apparatus for shaping semiconductor surfaces

Tunable electro-absorption modulator

A vertical-resonator-laser-diode and a method of manufacturing the same are disclosed. An active layer sequence for the production of laser-radiation is assembled between a first Bragg-reflector-layer-sequence and a second Bragg-reflector-layer-sequence. Each Bragg-reflector-layer-sequence has a plurality of mirror-pairs; the two Bragg-reflector-layer-sequences form a laser-resonator. The two Bragg-reflector-layer-sequences and the active layer-sequence are assembled between a first and a second electrical contact-layer. At least one of the two Bragg-reflector-layer-sequences is semitransparent for the laser-radiation. At least one light-absorbing layer is assembled with a given light-absorption either between the semitransparent Bragg-reflector-layer-sequence and the first electrical contact-layer, or on the light-outlet-side of the first electrical contact-layer.

Vertical-resonator-laser-diode with a light-absorbing layer and method of manufacturing the same

A vertical resonator structure with active layer and Bragg reflectors formed in a mesa and provided with an upper contact and a substrate contact. A bond pad for connection to a housing and the upper contact are parts of the same metallization layer that are directly adjacent to one another. For bundling current in the active layer, an aperture can be formed between oxidized regions of an AlGaAs layer. The oxidized regions have at least the dimensions of the bond pad which are for example, 90 &mgr;m and at least approximately 50 &mgr;m.

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Santa Barbara, CA, United States of America

Torsten Wipiejewski