International Business Machines Corporation

Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Other

Torsten Winkler

Klaus Goedicke

Volker Kirchhoff

Jonathan Reschke

Peter Frach

Hans Buchberger

Michael Jungh&auml;hnel

Michael Junghahnel

Dieter W Meyer

Manfred Muller

Hendrik Walde

Fred Fietzke

Falk Milde

Matthias Fahland

Artur Lang

Henrik Wolf

Frank Eckholz

Michael Jungh{overscore (a)}hnel

Ralf Bluethner

Ralf Bl&uuml;thner

Heinz Baur

Michael Junghaehnel

Manfred Mueller

Karl-Heinz Lehnert

Hans-Hermann Schneider

Hans-Herrman Schneider

Manfred M&uuml;ller

Andreas Fickert

Arno Hebgen

Friedel Haese

Karsten Handt

Harald Strecker

Hans-Herrmann Schneider

Henry G&uuml;ldner

Rainer C Schneider

Production of a thin-film system containing at least one ultra-thin film, preferentially in the film thickness range from 1 to 10 nm, which is deposited by plasma-aided chemical or physical vapor-phase deposition using magnetron discharges. The method is characterized in that in the course of deposition of the ultra-thin film the power output is introduced into the plasma in the form of a controlled number of power pulses and that the average power output during the pulse-on time is set higher by a factor of at least 3 than the averaged power output over the entire coating time during deposition of the ultra-thin film.

Method of producing a thin-film system

Process and control arrangement for introducing pulsing energy introduction into magnetron discharges. The process includes feeding a charge to the electrodes of a magnetron arrangement via a ignition source at a time t , and, after the feeding of the electric charge, determining an ignition of the magnetron discharge. The process also includes introducing a current, having a predetermined value, from a boost source at a time t , and, at a time t , separating the ignition source from the electrodes of the magnetron arrangement. The introduction of the current by the boost source continues for a certain duration t . The process also includes interrupting the introduction of the electric energy for a predetermined time t .

Process and switching arrangement for pulsing energy introduction into magnetron discharges

A method of coating of thin film coated magnetic disks and thin film magnetic disks made thereby is described. In accordance with the invention, a barrier layer is deposited on the substrate before the underlayer film(s) to increase the corrosion resistance of metallic substrate magnetic disks and, in the case of nonmetallic substrates, to reduce the diffusion of water to the substrate and of freely moveable ions from the substrate. Preferably the barrier layer is deposited by medium frequency pulsed sputtering at a frequency of 10 to 200 kHz and a pulse length to pulse pause ratio from 5:1 to 1:10. Aluminum or chromium are the preferred materials for the barrier layer. Additional improvements may be achieved where the sputtering process gas contains a proportion of oxygen and/or nitrogen.

Thin film disk with barrier layer

Process for monitoring an alternating-voltage discharge between the electrodes of a double electrode and an apparatus. The process includes measuring values of at least one of a discharge current and a discharge voltage for each half-wave within an alternating-voltage discharge period, determining a difference between the measured values of a second half-wave and the measured values of the first half-wave, and comparing the determined differences to specific tolerance values. When the specific tolerance values are exceeded by the determined differences, a power supply is reduced, whereby the discharge is at least briefly suppressed. The apparatus includes a double magnetron including first and second targets arranged to form a double electrode, and a power supply coupled to supply power to the first and second targets. The power supply includes a measurement unit for measuring values of at least one of discharge current and discharge voltage, such that at least one of a discharge current and a discharge voltage for each half-wave within an alternating-voltage discharge period is measured. A device for determining a difference between the measured values of a second half-wave and the measured values of the first half-wave is provided, as well as a device for comparing the determined differences to specific tolerance values, and a device for at least briefly suppressing the discharge when the specific tolerance values are exceeded by the determined differences.

Method for monitoring alternating current discharge on a double electrode and apparatus

Magnetron discharges are pulse-operated to avoid the so-called &ldquo;arcing&rdquo;. In the case of magnetron discharges from alternating current-fed magnetrons, the process is limited to the minor power of the energy supply because of the load-carrying capacity of the required electric components. When the magnetron discharges are fed by direct current, their effectiveness deteriorates because of the deposition of layers on the anode surfaces. The new process should enable a high supply power and prevent arcing. In magnetron discharges with at least two magnetron electrodes, the energy is supplied in such a way that at least one magnetron electrode is a cathode or anode and a number n of direct current pulses of said polarity is supplied. The poles of at least one magnetron electrode are then reversed and a number n of direct currents of this polarity are supplied. The process is carried on in this manner, the frequency of the direct current pulses being higher than that of the polarity reversals. The energy supply effectiveness is thus improved. This process and system enable the production of layers having the most different properties, for example for the glass, packaging, electronic, and machine construction industries.

Process and system for operating magnetron discharges

A procedure and apparatus for the application of carbon layers using reactive magnetron sputtering is described. The process includes sputtering of at least two targets made of carbon in a reactive atmosphere with a pulsed energy feed. During a pattern period of the pulses all targets (magnetrons) are once switched on as an anode and at least one target is switched as an anode at all times Various embodiments include detection and limitation of the 'microarcs'; executing of regeneration processes according to fixed predetermined time intervals for at least 5 seconds. In one embodiment a microarc is detected on a magnetron and if a next pulse-off time is more than a selected time period away, then the magnetron is connected to a positive pole of the power supply. In another embodiment of the invention a pulsed negative voltage is applied to a substrate being sputtered by connecting the substrate to a negative pole of a pulsed power supply having a positive pole connected to a positive pole of a power supply for a magnetron. In another embodiment of the invention there is an electrode insulated from an installation mass which is connected to at least one positive pole of a power supply during the periodic pausing sputtering of substrates for regeneration.

Magnetron sputtering method and apparatus utilizing a pulsed energy

A method and apparatus for depositing an underlayer and/or a magnetic thin film layer on a data storage disk are described. The sputtering power is supplied in the form of pulses during the application of the underlayer and/or magnetic storage to periodically ignite the plasma and increase the charge-carrier density in the sputtering chamber. The repetition frequency and parameters for the pulses and pauses between pulses are adjusted to achieve a desired nominal value for the coercive field strength of the magnetic layer. Preferably the repetition frequency of the power switching is from 10 to 80 kHz and the ratio of pulse length to pulse pause is within 5:1 to 1:5.

Pulsed DC sputtering method of thin film magnetic disks

Process and circuit for the bipolar pulse-shaped feeding of energy into

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Radeberg, Germany

Torsten Winkler