International Business Machines Corporation

Torsten Mahnke

Otto M Wagner

Anthony Gus Aipperspach

Sebastian Ehrenreich

Wolfgang Penth

Stefan Buettner

Asymmetrical random access memory cell () including cross coupled inverters () which are driven at their nodes () by separate bit-lines (blt, blc) of a pair of complementary bit-lines, which are connected via a pass-transistor (), wherein the random access memory cell is asymmetrical by means of the cross coupled inverters () which have asymmetrically physical behaviours whereby different switching thresholds of the inverters are present, and that the pass-transistors () are driven by separate controlled wordlines (wl, wwl).

Asymmetrical random access memory cell, and a memory comprising asymmetrical memory cells

An asymmetrical random access memory cell () including cross coupled inverters () which are driven at their nodes () by separate bit-lines (blt, blc) of a pair of complementary bit-lines, which are connected via a pass-transistors (), wherein said cross coupled inverters () have different switching thresholds and exhibit asymmetrical physical behaviours, wherein an additional pass-transistor () is provided in series to one of the pass-transistors () between one of the nodes () and its dedicated bit-line (blc). Further the invention relates to a random access memory including such memory cells and to a method of operating such a memory.

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Stuttgart, Germany

Torsten Mahnke