Kabushiki Kaisha Toshiba

Carrier Japan Corporation

Tooru Suga

Kazuya Nishihori

Keita Masuda

Takahiro Nakagawa

Kazuhiko Shibata

A radio frequency switch includes a switch circuit having switchable radio frequency (RF) signal pathways. Each switchable RF signal pathway comprises a plurality of n-type MOSFETs connected in series. A control circuit is configured to control a conduction state of the plurality of switchable RF signal pathways. Each n-type MOSFET includes a body region between a source region thereof and a drain region thereof. A gate electrode is on the body region. A silicon nitride film having a tensile internal stress covers the source layer, the drain layer, and the gate electrode.

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Yokohama Kanagawa, Japan

Tooru Suga