Matsushita Electric Industrial Co., Ltd.

Tooru Nasu

Eiji Fujii

Yasuhiro Shimada

Yasuhiro Uemoto

Akihiro Matsuda

Tatsuo Ootsuki

Atsuo Inoue

Shinitirou Hayashi

Koichi Arita

Masaki Kibe

Yoshihisa Nagano

Shinichiro Hayashi

A semiconductor memory device according to the present invention includes a memory cell capacitor for storing data thereon. The capacitor is made up of a first electrode connected to a contact plug, a second electrode and a capacitive insulating film interposed between the first and second electrodes. The first electrode includes a first barrier film in contact with the contact plug and a second barrier film, which is formed on the first barrier film and prevents the diffusion of oxygen. The second barrier film covers the upper and side faces of the first barrier film.

Semiconductor memory device

A semiconductor device comprising an integrated circuit and a capacitor. In this capacitor, a bottom electrode, a dielectric film and a top electrode are formed, independently of the integrated circuit, on the interlayer insulating film, and the top electrode and bottom electrode are connected with metal interconnections through contact holes opened in the protective film for protecting the surface of the capacitor. In this constitution, either the top electrode or the bottom electrode is connected the bias line of the integrated circuit, and the other is connected to the ground line, so that extraneous emission may be reduced without having to connect the capacitor outside.

Semiconductor device having capacitor and manufacturing apparatus thereof

Semiconductor device having capacitor and manufacturing method thereof

Semiconductor device having capacitior and manufacturing method thereof

This is a semiconductor device having an integrated circuit and a capacitor formed on a semiconductor substrate. The capacitor comprises a bottom electrode serving also as a part of a diffusion layer of the integrated circuit, a dielectric film being formed on the bottom electrode, and a top electrode of a conductive film being formed on the dielectric film. In particular, it is preferred to form the dielectric film in two layers of dielectric film, and compose the dielectric film contacting with the bottom electrode of a dielectric material in a composition possessing an excess of a metal element than the stoichiometric composition.

Semiconductor device having capacitor

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Kyoto, Japan

Tooru Nasu