Sumitomo Metal Industries, Inc.

Sumco Corporation

Tooru Nagashima

Yasuo Koike

Shinsuke Sadamitsu

Masaharu Ninomiya

Takeshi Kii

A method for manufacturing semiconductor silicon epitaxial wafer and semiconductor device by which a gettering ability can be given to an epitaxial wafer in which the formation of BMD is not able to be expected in both low- and high-temperature device manufacturing processes, with the manufacturing processes being lower and higher than 1,050&deg; C. in temperature, and has a specific resistance of &gE;10 m&OHgr;&middot;cm. When this method is used, such BMD that is sufficient to obtain gettering can be formed in both the low- and high-temperature processes, with the manufacturing processes being lower and higher than 1,050&deg; C. in temperature, even in the epitaxial wafer having a specific resistance of &gE;10 m&OHgr;&middot;cm by performing low-temperature heat treatment at 650&tilde;900&deg; C. before starting epitaxial film formation, by selecting the heat-treating time in accordance with the process temperature in the device manufacturing processes and heavy-metal contaminants which are mixed in during the device manufacturing processes can be gettered sufficiently. Therefore, the characteristic deterioration of a device can be prevented and the yield of the device can be improved.

Growing community of inventors

Saga, Japan

Tooru Nagashima