Hitachi Chemical Company, Ltd.

National Institute of Advanced Industrial Science and Technology

Tooru Kikuchi

Takashi Masuko

Kazuhiko Sato

Yasuo Miyadera

Masami Yusa

Akira Kageyama

Shinji Takeda

Iwao Maekawa

Aizou Kaneda

Mitsuo Yamasaki

Katsuyuki Masuda

Toshihiko Takasaki

Akio Kotato

Makoto Saitou

Tadaji Satou

Mituo Yamasaki

Yuusuke Miyamae

Hayato Kotani

A polyimide resin including repeating units represented by formula (1): wherein R is a diamine residue or a diisocyanate residue; m is an integer of 2 to 30; any of silicon atoms bonded to norbornane rings is in exo configuration with respect to the norbornane rings; and any of imide rings bonded to the norbornane rings is in exo configuration with respect to the norbornane rings, and a polyamic acid resin including repeating units represented by formula (2): wherein R is a diamine residue; m is an integer of 2 to 30; any of silicon atoms bonded to norbornane rings is in exo configuration with respect to the norbornane rings; and any of amide groups and carboxyl groups bonded to the norbornane rings is in exo configuration with respect to the norbornane rings. The polyimide resin is soluble in general-purpose solvents, has a good transparency and a high molecular weight, and is excellent in mechanical properties, such as tensile strength and elongation.

Silicon-containing alicyclic polyimide resin, polyamic acid resin, and manufacturing method for same

The invention relates to a tetracarboxylic dianhydride represented by the following formula (1). [In formula (1) R, R, Rand Reach independently represent an alkyl group having from 1 to 5 carbon atoms, m represents a number from 1 to 30, all of the silicon atoms bonding to the norbornane rings are in an exo-configuration with respect to the norbornane rings, and all of the dicarboxylic anhydride groups bonding to the norbornane rings are in an exo-configuration with respect to the norbornane rings.]

Liquid tetracarboxylic dianhydrides and process for the preparation thereof

A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 MPa or less at a temperature of 250&#xb0; C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.

Semiconductor device and process for fabrication thereof

Laminating method of film-shaped organic die-bonding material, die-bonding method, laminating machine and die-bonding apparatus, semiconductor device, and fabrication process of semiconductor device

A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 Mpa or less at a temperature of 259&deg; C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.

Laminating method of film-shaped organic die-bonding material,

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Hitachi, Japan

Tooru Kikuchi