Hitachi, Ltd.

Tooru Fujioka

Eiichi Hase

Toshio Miyamoto

Hiroshi Kondoh

Tomio Yamada

Akishige Nakajima

Isao Arai

Kazumichi Sakamoto

A semiconductor integrated circuit device is provided for high-frequency or high-speed circuitry having stabilized characteristics and reduced influence on surrounding devices. In the device structure, ground leads extending from a metal substrate or metal layer for mounting ICs for high-frequency or high-speed circuitry are disposed adjacent to at least one side of signal leads and a width W or a space S of at least a part of the leads are set to inherent values for reducing the inductance of ground leads. Further, passive circuit chips for short-circuiting or blocking a high frequency signal are mounted on the metal substrate to suppress high-frequency component signals flowing through power supply leads and ground leads. According to the structure, a high-frequency potential difference due to the inductance of the ground and power supply leads is suppressed and RF energy is confined within the semiconductor integrated circuit device, so that deterioration of the characteristics of the high-frequency or high-speed ICs can be reduced and leakage of the RF signal to the outside of the semiconductor integrated circuit device can be prevented to avoid influence on surrounding devices.

Semiconductor integrated circuit devices for high-speed or high frequency

A microwave multi-stage power amplifier has matching circuits for input and output stages and one or more inter-stage matching circuits. The amplifier and a signal output pad and first and second voltage supply pads are formed at one and the same semi-insulating substrate. A first FET in the output stage has its drain connected to the first voltage supply pad through a first distributed line and further connected to the signal output pad through a second distributed line in which the first and second distributed lines contribute to formation of the matching circuit for the output stage. A second FET in a stage preceding to the output stage has its drain connected to the second voltage supply pad through a third distributed line serving as a connection conductor. The first distributed line has a width larger than that of the third distributed line and has a length which limits an impedance seen at the drain of the output stage FET towards the first voltage supply pad at an operation frequency of the amplifier to a value other than infinity.

Monolithic integrated circuit device having microwave power amplifier

Growing community of inventors

Kokubunji, Japan

Tooru Fujioka