Advanced Micro Devices Corporation

Tony T Phan

John K Lowell

Tom J Goodwin

An improved sputter etching technique is provided for substantially preventing or reducing plasma etch damages associated with sputter etching. The plasma etch technique can utilize a semiconductor wafer having at least one diode formed within an inactive region of the wafer near the outer periphery of the wafer. The diode is capable of preventing charge transfer or arcing between the grounded anode and the p-channel gate region. By placing a diode within the inactive region of the wafer, problems such as gate oxide breakdown, threshold voltage skew, flat-band voltage skew, etc. can be minimized or substantially reduced. Alternatively, a standard wafer not having an implanted or diffused diode can be utilized to obtain similar beneficial results provided the sputter etch anode is retrofitted to include a diode placed between the anode and the ground terminal. Similar to the diode placed on the wafer, the retrofitted anode is used to provide a depletion region for preventing charge transfer therethrough.

Device for reducing plasma etch damage and method for manufacturing same

An improved ion implantation system and method for placing dopant upon and within a semiconductor surface. The ion implantation system is capable of higher beam current by reducing dopant concentration across selected surface areas. Offsetting electrons are also diffused to maintain a lower net ion level at the selected areas. Amount of beam current can be increased according to user requirements to enhance throughput of the implantation process. Diffusion of ions and electrons is achieved by reconfiguring or redesigning an acceleration tube placed subsequent to the ion source. The acceleration tube comprises a plurality of electrodes spaced adjacent each other and extending as a pair of rows. Each row extends from a location proximal to the ion source to a location distal to the ion source. Sourcing a power supply upon a more distally located electrode allows the ions and/or electrons to diffuse outward from their acceleration path at a larger spot size upon the semiconductor surface.

Growing community of inventors

Austin, TX, United States of America

Tony T Phan