Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Centre National De La Recherche Scientifique

Microoled

Thales

Université De Nantes

Institut National Polytechnique De Grenoble

Thomson Licensing

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Tony Maindron

Myriam Tournaire

David Vaufrey

François Templier

Laurent Mollard

Christophe Prat

Bernard Aventurier

Jean-Yves Simon

Salim Boutami

Francois Marion

Gunther Karl Haas

Christophe Kopp

Roch Espiau De Lamaestre

François Marion

Benoit Racine

Bernard Geffroy

Elena Ishow

Julia De Girolamo

Franz Bruckert

Robin Bonnet

Nicolas Troc

Hani Kanaan

Benoit Dugrenil

Marianne Weidenhaupt

Sébastien Guillamet

Corentin Le Maoult

Simon Olivier

Jean-Marc Gilet

Eléna Ishow

Hélène Le Cloarec

An optoelectronic device that includes a substrate and a stack of organic layers that has at least one active layer arranged between a reflective surface and a semi-reflective surface arranged facing one another at a given distance and forming an optical cavity. The device includes at least three groups of pixels, each group of which is characterized by a cavity of a different optical length, the cavity having a number of bilayers arranged between the substrate and said stack of organic layers, each bilayer being formed of a first transparent and conductive layer of a first transparent and conductive material, and of a second transparent and conductive layer of a second transparent and conductive material, in direct contact with the first transparent and conductive layer.

Optoelectronic device and manufacturing method for an optoelectronic device

A culture plate including: an array of light sources formed inside and on top of a semiconductor substrate; a transparent planarization layer coating the array of light sources; and an array of wells formed on said layer, each light source being located vertically in line with a well.

Culture plate

An optoelectronic device manufacturing method, including the following successive steps: transferring an active inorganic photosensitive diode stack on an integrated control circuit previously formed inside and on top of a semiconductor substrate; and forming a plurality of organic light-emitting diodes on the active photosensitive diode stack.

Optoelectronic device manufacturing method

The invention provides an optical particle sensor () comprising:

Optical particle sensor

For applications in the fields of organic electronics and photonics, disclosed are fluorescent charge-transfer compounds emitting in the visible spectral range from blue to red, including a triarylamine moiety, an electron-withdrawing group and at least two photopolymerizable groups. Also disclosed is a method for manufacturing a film-forming and photo-crosslinkable composition including at least one compound of the invention and its use as a precursor of a photocrosslinked emissive layer.

Photo-crosslinkable emissive molecular materials

A pixel includes, successively a substrate; a reflector that is reflective in the visible spectrum; a spacing layer; a first, transparent electrode; a stack of organic light-emitting layers that is configured to emit a white light; a second, semitransparent electrode that is formed on the stack, the second electrode and the reflector forming an optical resonator; the spacing layer having first, second and third portions, the thicknesses of which are adjusted such that the optical resonator allows, respectively, the transmission of red, green and blue light; noteworthy in that the first and second portions of the spacing layer each include lateral edges that are covered with a material that is reflective in the visible spectrum.

Pixel for an organic light-emitting diode microscreen

A process includes the following successive steps: a) providing a substrate including a structured first electrode; b) forming in succession first and second bilayer stacks on the structured first electrode, each bilayer stack including in succession first and second layers made of first and second materials that are transparent conductive oxides able to be selectively etched; c) etching the second bilayer stack in a zone intended to accommodate a blue subpixel and in a zone intended to accommodate a green subpixel; d) etching the first bilayer stack in the zone intended to accommodate the blue subpixel; e) forming a stack of organic light-emitting layers, the stack being configured to emit white light; f) forming a second electrode on the stack of organic light-emitting layers so as to obtain an optical resonator with the first electrode.

Process for manufacturing a pixel of an OLED micro-display

A monolithic display device including a plurality of first pixels capable of emitting light in a first wavelength range, and a plurality of second pixels capable of emitting light in a second wavelength range, the first pixels each including a gallium nitride light-emitting diode, and the second pixels each including an organic light-emitting diode.

Monolithic display device including integrated control circuit and method for producing the same

An encapsulated device comprises: an organic optoelectronic component exhibiting at least one sensitive surface protected from oxygen and/or water vapor; and a multilayer encapsulation structure covering the sensitive surface, comprising at least one layer made of organic material interposed between first and second barrier layers made of nonmetallic inorganic material impermeable to oxygen and water vapor; wherein the barrier layers are made of a material chosen from a stoichiometric metal oxide, stoichiometric silicon oxide and a silicon oxynitride and produced by atomic layer deposition, and wherein the multilayer encapsulation structure also comprises at least one active layer containing a nonstoichiometric oxide exhibiting an oxygen deficiency, also interposed between the first and said second barrier layers. A process for encapsulating a component exhibiting a 'sensitive' surface protected from oxygen and/or water vapor by producing a multilayer encapsulation structure is provided.

Encapsulation of an organic optoelectronic component

This method concerns the protection against humidity of a device including a first and a second electronic components respectively having two opposite surfaces, the surfaces: being separated by a non-zero distance shorter than 10 micrometers; having an area greater than 100 mm; being connected by an assembly of electrical interconnection elements spaced apart from one another by a space void of matter. This method includes applying a deposit of thin atomic layers onto the device to form a layer of mineral material covering at least the interconnection elements, the layer of mineral material having a permeability to water vapor smaller than or equal to 10g/m/day.

Hybrid electronic device protected against humidity and method of protecting a hybrid electronic device against humidity

The invention relates to an encapsulation process for an electronic component (). The component () is connected to an electrical contact track composed of a metal layer (). The process according to the invention comprises the following steps: The process according to the invention enables electrical contact through the encapsulation layer (). The invention also relates to an electronic device obtained using such a process.

Encapsulation process and associated device

The invention relates to an organic optoelectronic device which is protected from ambient air by a sealed encapsulation structure of the type including at least one thin layer. The device includes a substrate; at least one light-emitting unit deposited on the substrate, incorporating internal electrodes and external electrodes defining an active zone and, between the electrodes, a stack of organic films; and a sealed encapsulation structure having one or more thin layers including at least one inorganic layer placed on top of the light-emitting unit and encasing same laterally. The device also includes a pre-encapsulation structure located between the external electrode and the encapsulation structure and which includes a buffer layer covering the external electrode and contains a heterocyclic organometallic complex having a glass transition temperature above 80&#xb0; C., and a barrier layer covering the buffer layer and contains a silicon oxide SiOx, wherein x is 0&#x3c;x&#x3c;2.

Organic optoelectronic device and method for the encapsulation thereof

An organic optoelectronic device incorporating a hermetic thin-film encapsulation, and encapsulation method are provided. This device has a useful emission or absorption face and, behind this face, a substrate coated with an array of radiation-emitting or radiation-absorbing organic structures inserted between, and electrically contacting, electrodes that are respectively proximal and distal relative to the substrate. Separating beads between structures, composed of an insulating material, extend between the respective proximal electrodes of the structures from peripheral edges of these electrodes. The device includes a hermetic encapsulation that has at least one inorganic internal film surmounting the distal electrode, a photosensitive polymer layer covering this internal film, and a dielectric inorganic external film acting as a barrier covering the polymer layer. The polymer layer is etched with a discontinuous geometry formed of segments that respectively surmount the structures and end beyond the structures in line with the beads.

Organic optoelectronic device and the encapsulation method thereof

The present invention relates to a reactor for atomic layer deposition (ALD), comprising a reaction chamber comprising a platen and bounded internally by surfaces; at least one inlet orifice and at least one outlet orifice, each emerging from one of the surfaces bounding the chamber. The reactor furthermore comprises, within it, at least one wall apertured with at least one orifice, the apertured wall extending around the platen and over at least most of the height between the lower surface and the upper surface, at least one orifice in at least one of the apertured walls not facing the inlet orifice so as to form chicanes in the flow of gaseous precursor from each inlet orifice to the platen.

Reactor for atomic layer deposition (ALD), application to encapsulation of an OLED device by deposition of a transparent AI2O3 film

The invention relates to a method for making an electronic display device () having a screen () covered by a protection plate, and to a substrate () covered by said screen for obtaining such a device. The method comprises the following steps: a) applying glue () at the non cross-linked state substantially on the entire surface of the screen and/or the assembling surface () of the plate () following a deposit on the screen connection area () of at least one organic layer () for protecting the connection area from the glue; applying the assembling surface against the screen via the glue; c) emitting a radiation through the plate for cross-linking the glue; and d) removing a portion of the plate covering the connection area so that the latter can be electrically accessible, the protection layer being removed from the connection area upon said removal or during a further surface processing step. According to the invention, the protection layer contains at least one organic compound selected from the group comprising compounds derived from diamines and organometallic complexes with heterocycles.

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Grenoble, France

Tony Maindron