Micron Technology Incorporated

Tony M Lindenberg

Chandra S Tiwari

Jonathan S Hacker

Kurt J Bossart

Fabio Pellizzer

Stephen W Russell

Michael J Bernhardt

Wenzhe Zhang

Douglas Capson

Christopher J Gambee

Andrew D Carswell

Lequn Jennifer Liu

Kyle A Ritter

Mark Morley

A testing probe apparatus for testing die. The testing probe may include a probe interface and a carrier for supporting at least one die comprising 3D interconnect (3DI) structures. The probe interface may be positionable on a first side of the at least one die and include a voltage source and at least one first inductor operably coupled to the voltage source. A voltage sensor and at least one second inductor coupled to the voltage sensor may be disposed on a second opposing side of the at least one die. The voltage source of the probe interface may be configured to inductively cause a voltage within the 3DI structures of the at least one die via the at least one first inductor. The voltage sensor may be configured to sense a voltage within the at least one 3DI structure via the at least one second inductor. Related systems and methods are also disclosed.

Inductive testing probe apparatus for testing semiconductor die and related systems and methods

A semiconductor device assembly that includes a first side of a semiconductor device supported on a substrate to permit the processing of a second side of the semiconductor device. A filler material deposited on the semiconductor device supports the semiconductor device on the substrate. The filler material does not adhere to the semiconductor device or the substrate. Alternatively, the filler material may be deposited on the substrate. Instead of a filler material, the substrate may include a topography configured to support the semiconductor device. Adhesive applied between an outer edge of the first side of the semiconductor and the substrate bonds the outer edge of the semiconductor device to the substrate to form a semiconductor device assembly. A second side of the semiconductor device may then be processed and the outer edge of the semiconductor device may be cut off to release the semiconductor device from the assembly.

Edge cut debond using a temporary filler material with no adhesive properties and edge cut debond using an engineered carrier to enable topography

A testing probe apparatus for testing die. The testing probe may include a probe interface and a carrier for supporting at least one die comprising 3DI structures. The probe interface may be positionable on a first side of the at least one die and include a voltage source and at least one first inductor operably coupled to the voltage source. A voltage sensor and at least one second inductor coupled to the voltage sensor may be disposed on a second opposing side of the at least one die. The voltage source of the probe interface may be configured to inductively cause a voltage within the 3DI structures of the at least one die via the at least one first inductor. The voltage sensor may be configured to sense a voltage within the at least one 3DI structure via the at least one second inductor. Related systems and methods are also disclosed.

Methods, systems, and devices for memory arrays that use a conductive hard mask during formation and, in some cases, operation are described. A hard mask may be used to define features or components during the numerous material formation and removal steps used to create memory cells within a memory array. The hard mask may be an electrically conductive material, some or all of which may be retained during formation. A conductive line may be connected to each memory cell, and because the hard mask used in forming the cell may be conductive, the cell may be operable even if portions of the hard mask remain after formation.

Conductive hard mask for memory device formation

An array of cross point memory cells comprises spaced elevationally inner first lines, spaced elevationally outer second lines which cross the first lines, and a multi-resistive state region elevationally between the first and second lines where such cross. Individual of the multi-resistive state regions comprise elevationally outer multi-resistive state material and elevationally inner multi-resistive state material that are electrically coupled to one another. The inner multi-resistive state material has opposing edges in a vertical cross-section. The outer multi-resistive state material has opposing edges in the vertical cross-section that are laterally offset relative to the opposing edges of the inner multi-resistive state material in the vertical cross-section. Methods are also disclosed.

Array of cross point memory cells and methods of forming an array of cross point memory cells

Some embodiments include a memory array which has a first series of access/sense lines extending along a first direction, and a second series of access/sense lines over the first series of access/sense lines and extending along a second direction which crosses the first direction. Memory cells are vertically between the first and second series of access/sense lines. Each memory cell is uniquely addressed by a combination of an access/sense line from the first series and an access/sense line from the second series. Resistance-increasing material is adjacent to and coextensive with the access/sense lines of one of the first and second series, and is between the adjacent access/sense lines and programmable material of the memory cells. Some embodiments include methods of forming memory arrays.

Memory arrays and methods of forming memory arrays

Memory arrays

Systems and methods for chemical mechanical planarization topography control via implants are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes increasing the content of at least one of silicon or germanium in at least select regions of a dielectric material thereby reducing the material removal rate for a chemical mechanical polishing (CMP) process at the select regions, and removing material from the dielectric material using the CMP process. In another embodiment, a method of manufacturing a semiconductor device includes increasing content of at least one of boron, phosphorus, or hydrogen in at least select regions of a dielectric material thereby increasing the material removal rate of a CMP process at the select regions, and removing material from the dielectric material using the CMP process.

Growing community of inventors

Boise, ID, United States of America

Tony M Lindenberg