Applied Materials, Inc.

Tony Kaushal

Shamouil Shamouilian

Ashish Bhatnagar

Kwok Manus Wong

Dmitry Lubomirsky

Muhammad M Rasheed

Xinglong Chen

Yongqi Hu

Kartik Ramaswamy

Fred Conrad Redeker

Rajeev Bajaj

Shijian Li

Jui-lung Li

Chuong Q Dam

You Wang

Kapila P Wijekoon

Sudhir R Gondhalekar

Mehran Moalem

Shi-Ping Wang

David H Mai

Rahul Surana

Gary Lam

Yongsik Moon

Kadthala Ramaya Narendranath

Ananda H Kumar

Arnold Kholodenko

Kadthala Ramaya Narendrnath

Peter Reimer

Semyon L Kats

Michael G Chafin

Harshad M Borgaonkar

David Jorgensen

Amir H Tavakoli

Michelle Lacomb Novak

Sudhir Goodhalekar

Daniel Ashkin

Exemplary methods of coating a semiconductor component substrate may include submerging the semiconductor component substrate in an alkaline electrolyte. The alkaline electrolyte may include yttrium. The methods may include igniting a plasma at a surface of the semiconductor component substrate for a period of time less than or about 12 hours. The methods may include forming a yttrium-containing oxide on the semiconductor component substrate. A surface of the yttrium-containing oxide may be characterized by a yttrium incorporation of greater than or about 10 at. %.

Conformal yttrium oxide coating

Exemplary methods of coating a metal-containing component are described. The methods are developed to increase corrosion resistance and improve coating adhesion to a metal substrate. The methods include forming a bonding layer on a metal substrate, where the bonding layer includes an oxide of a metal in the metal substrate. The coating methods further include depositing a stress buffer layer on the bonding layer, where the stress buffer layer is characterized by a stress buffer layer coefficient of thermal expansion (CTE) that is less than a metal substrate CTE and a bonding layer CTE. The coating methods also include depositing an environmental barrier layer on the stress buffer layer, where a ratio of the metal substrate CTE to an environmental barrier layer CTE is greater than or about 20:1, and where the environmental barrier layer includes silicon oxide. The metal-containing components may be used in fabrication equipment for electronic devices.

Multilayer coating for corrosion resistance

A method for refurbishing at least a portion of an electrostatic chuck. The method comprises removing a first dielectric component from a fluid distribution element of the electrostatic chuck and replacing the first dielectric component with a second dielectric component.

Method for refurbishing an electrostatic chuck with reduced plasma penetration and arcing

A method of making an electrostatic chuck comprising positioning a plate into a channel in a body to form a plenum and inserting a dielectric component into an opening in the plate, where the dielectric component defines a portion of a passage from the plenum. Thereafter, depositing a dielectric layer covering at least a portion of the body and at least a portion of the plate to form a support surface. The dielectric layer is polished to a specified thickness. In one embodiment, the polishing process forms an opening through the dielectric layer to enable the dielectric component to define a passage between the support surface and the plenum. In another embodiment, at least a portion of the dielectric layer is porous proximate the dielectric component such that the porous dielectric layer and the dielectric component form a passage between the support surface and the plenum. In a further embodiment, a hole is formed through the dielectric layer and the hole in the dielectric layer and the dielectric component form a passage between the support surface and the plenum.

Method of making an electrostatic chuck with reduced plasma penetration and arcing

A method and apparatus for providing a fluid distribution element for an electrostatic chuck that reduces plasma formation and arcing within heat transfer fluid passages. One embodiment comprises a plate and a dielectric component, where the dielectric component is inserted into the plate. The plate is adapted to be positioned within a channel to define a plenum, wherein the dielectric component provides at least a portion of a fluid passage coupled to the plenum. A porous dielectric layer, formed upon the dielectric component, provides at least another portion of a fluid passage coupled to the plenum. In other embodiments, the fluid distribution element comprises various arrangements of components to define a fluid passage that does not provide a line-of-sight path from the support surface for a substrate to a plenum.

Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing

An erosion-resistant article for use as a component in plasma process chamber. The erosion-resistant article comprises a support and an oxide coating comprising yttrium, which is disposed over the support. The support and the oxide coating preferably have material compositions that differ from one another in coefficient of thermal expansion by no more than 5&#xd7;10/K. Preferred oxide coating compositions include yttria and yttrium aluminum garnet. Preferred supports include alumina supports and aluminum-silicon carbide supports.

Erosion-resistant components for plasma process chambers

Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.

Method and apparatus for polishing metal and dielectric substrates

A substrate processing apparatus has a process chamber with a substrate support, a gas supply to introduce a gas into the chamber, and a gas energizer to energize the gas in the processing of a substrate, thereby generating an effluent gas. A catalytic reactor has an effluent gas inlet to receive the effluent gas and an effluent gas outlet to exhaust treated effluent gas. A heater is adapted to heat the effluent gas in the catalytic reactor. The heated catalytic treatment of the effluent gas abates the hazardous gases in the effluent. An additive gas source and a prescrubber may also be used to further treat the effluent.

Heated catalytic treatment of an effluent gas from a substrate fabrication process

A component of a plasma reactor chamber for processing a semiconductor workpiece, the component being a monolithic ceramic piece formed from a mixture of yttrium aluminum perovskite (YAP) and yttrium aluminum garnet (YAG) formed from a mixture of yttria and alumina powders, the ratio the powders in said mixture being within a range between one ratio at which at least nearly pure yttrium aluminum perovskite is formed and another ratio at which at least nearly pure yttrium aluminum garnet is formed.

Elements having erosion resistance

Methods and apparatus for polishing substrates comprising conductive and dielectric materials with reduced topographical defects

Endpoint of a chemical mechanical polishing process is detected by monitoring acoustical emissions produced by contact between a polishing pad and a wafer. The acoustic information is resolved into a frequency spectrum utilizing techniques such as fast Fourier transformation. Characteristic changes in frequency spectra of the acoustic emissions reveal transition in polishing between different material layers. CMP endpoint indicated by a change in the acoustic frequency spectrum is validated by correlation with other sensed properties, including but not limited to time-based changes in amplitude of acoustic emissions, frictional coefficient, capacitance, and/or resistance. CMP endpoint revealed by a change in acoustic frequency spectrum can also be validated by comparison with characteristic frequency spectra obtained at endpoints or polishing transitions of prior operational runs.

Chemical mechanical polishing endpoinat detection

An apparatus and method for reducing hazardous gases exhausted from a process chamber includes an effluent plasma reactor and a downstream catalytic reactor . The reactor may include a consumable liner that reacts with the energized effluent to remove the hazardous gases. The catalytic reactor may also include catalytic surfaces in a honeycomb, foam, or pellet structure to catalyze reactions that further reduce hazardous gas content.

Abatement of hazardous gases in effluent

A method for reducing hazardous gases exhausted from a process chamber includes an effluent gas treatment system with a gas energizing reactor and an additive gas source. Additive gas comprising reactive gas is introduced into the effluent from the process chamber in a volumetric flow rate in relation to the hazardous gas content in the effluent.

Treatment of hazardous gases in effluent

A ceramic substrate support and methods for fabricating the same are provided. In one embodiment, a ceramic substrate support for supporting a substrate includes a ceramic body and a porous member disposed therein. The ceramic body generally has an upper portion and a lower portion. The upper portion includes a support surface while the lower portion includes a bottom surface. At least one passage is disposed in the lower portion of the ceramic body. A first end of the passage is at least partially closed by the upper portion of the ceramic body. At least one outlet is disposed through the portion of the ceramic body through the upper portion of the ceramic body and fluidly couples the passage to the support surface.

Substrate support pedestal

An effluent abatement system that may be used to abate F gas content of effluent exhausted from a process chamber such as effluent from a CVD chamber cleaning process includes a catalytic reactor to reduce the content of F in the effluent The system may further include a prescrubber to add reactive gases to the effluent and/or to treat the effluent prior to treatment in the catalytic reactor Alternatively reactive gases can be added to the effluent by a gas source

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Cupertino, CA, United States of America

Tony Kaushal