Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Oled Gmbh

Ledvance Gmbh

Osram Opto Semiconductor Gmbh

Tony Albrecht

Peter Brick

Norbert Linder

Stephan Lutgen

Marc Philippens

Wolfgang Schmid

Johann Luft

Glenn-Yves Plaine

Thomas Schlereth

Albert Schneider

Markus Kirsch

Berthold Hahn

Ralph Wirth

Ulrich Steegmüller

Markus Richter

Hans-Christoph Gallmeier

Wolfgang Reill

Alexander Baumgartner

Wilhelm Stein

Christian Gaertner

Michael Bestele

Tamas Lamfalusi

Christian Gatzhammer

Thomas Schwarz

Stefan Illek

Karl Engl

Patrick Rode

Lutz Hoeppel

Stephan Kaiser

Markus Hofmann

Klaus Streubel

Franz Eberhard

Jan Marfeld

Markus Maute

Stefan Bader

Andreas Weimar

Heribert Zull

Roland Schulz

Anna Kasprzak-Zablocka

Markus Boss

Magnus Ahlstedt

Martin Müller

Werner Späth

Kerstin Neveling

Christian Eichinger

Werner Plass

Fabian Knorr

Christian Jung

Martin Reufer

Stefan Handl

Udo Streller

In an embodiment, the optoelectronic semiconductor device comprises an optoelectronic semiconductor chip for emitting a radiation. An optical element is disposed downstream of the semiconductor chip. The semiconductor chip and the optical element are embedded in a potting body. The optical element comprises a structured, contiguous and optically effective area, which is located inside the optical element directly at an optical contrast region, preferably an evacuated or gas-filled cavity. The optically effective area completely covers a radiation exit area of the semiconductor chip.

Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

A light fixture having at least one LED and at least one filament, wherein the at least one filament is connected in series to the at least one LED. A current supplied to the at least one LED in the light fixture is regulated by the electrical properties of the at least one filament. Thus the at least one LED in the light fixture can be run without an electrical driver.

Light fixture with at least one LED

An optoelectronic component includes an optoelectronic semiconductor chip including a connection surface; a first potting body; and a second potting body, wherein the first potting body covers all lateral side surfaces and the top surface of the semiconductor chip, the first potting body has a bottom surface flush with the connection surface, the second potting body has a bottom surface flush with the bottom surface, the second potting body completely covers all side surfaces of the first potting body facing away from the semiconductor chip, a top surface of the second potting body on the opposite of the connection surface is convexly curved, the first and second potting bodies have a contour in a lateral plane that is not similar, and the optoelectronic semiconductor chip has exclusively on its connection surface exposed electrical contact surfaces via which the semiconductor chip is electrically connectable and operable.

Optoelectronic component

An optoelectronic component includes an optoelectronic semiconductor chip including a first potting body; and a second potting body, wherein the first potting body covers all lateral side surfaces and a top surface of the semiconductor chip, the first potting body has a bottom surface flush with a connection surface of the semiconductor chip, the second potting body has a bottom surface flush with the bottom surface of the first potting body, the second potting body completely covers all side surfaces of the first potting body facing away from the semiconductor chip, a top surface of the second potting body on the opposite of the connection surface is convexly curved, and the optoelectronic semiconductor chip has exclusively on its connection surface exposed electrical contact surfaces via which the semiconductor chip is electrically connectable and operable.

Optoelectronic component and method of producing an optoelectronic component

The invention relates to a method for producing a plurality of optoelectronic components, comprising the following steps: &#x2014;providing an auxiliary support wafer () having contact structures (), wherein the auxiliary support wafer comprises glass, sapphire, or a semiconductor material, &#x2014;applying a plurality of radiation-emitting semiconductor bodies () to the contact structures (), &#x2014;encapsulating an least the contact structures () with a potting mass (), and &#x2014;removing the auxiliary support wafer (). The invention further relates to an optoelectronic component.

Method for producing a plurality of optoelectronic components and optoelectronic component

An optoelectronic component device includes a plurality of optoelectronic components that provide and/or absorb electromagnetic radiation; a reflector arranged in a beam path of the electromagnetic radiation of the plurality of optoelectronic components and which has a surface that is at least partly reflective with respect to the provided electromagnetic radiation; wherein the plurality of optoelectronic components at least partly surround the reflector or are at least partly surrounded by the reflector; and the reflector reflects a provided electromagnetic radiation such that a predefined field distribution of the reflected electromagnetic radiation is formed in the image plane of the optoelectronic component device.

Optoelectronic component device, method of producing an optoelectronic component device, and method of operating an optoelectronic component device, method of operating an optoelectronic device having improved emission characteristics

A method is provided for producing a plurality of radiation-emitting semiconductor chips, having the following steps:

Method for producing a plurality of radiation-emitting semiconductor chips

A ring light module having a plurality of optoelectronic semiconductor components for producing electromagnetic radiation, a reflector of the ring light module comprising a reflective surface, and a support. The semiconductor components are mounted on the support. In a plan view of a main radiation side of the ring light module, the reflector comprises at most two planes of symmetry. The reflector tapers in the direction towards the main radiation side. At least some of the main emission directions of adjacent optoelectronic semiconductor components are oriented differently from each other, and the main emission directions point towards the reflective surface.

Ring light module

A semiconductor chip () is provided which comprises:

Monolithic semiconductor chip array

The invention relates to an optoelectronic semiconductor element that emits mixed-color radiation when in operation. The optoelectronic semiconductor component comprises an optoelectronic semiconductor chip, a conversion element that has a curvature, and a spacer element that is arranged between the optoelectronic semiconductor chip and conversion element. The spacer has a curved surface that faces the conversion element, with the conversion element being in direct contact with the curved surface.

A semiconductor diode has a first semiconductor layer () of a first conductivity type and a second semiconductor layer of a second conductivity type having a doping. The second semiconductor layer has a vertical electrical via region () which is connected to the first semiconductor layer and in which the doping is modified in such a way that the electrical via region () has the first conductivity type. A method for producing such a semiconductor diode is described.

Semiconductor diode and method for producing a semiconductor diode

An optoelectronic semiconductor chip, comprising a first contact location () and a second contact location (), and a reflective layer (), which is directly electrically conductively connected to the second contact location. The reflective layer contains a metal that tends toward migration, and the reflective layer is arranged in such a way that a migration path () for the metal can form between the second and the first contact location. A means () which, during operation of the semiconductor chip, forms an electric field that counteracts the migration of the metal is provided at the semiconductor chip.

Optoelectronic semiconductor chip comprising a reflective layer

A method for manufacturing an optically pumped surface-emitting semiconductor laser device, wherein a surface-emitting semiconductor laser layer sequence having a quantum confinement structure is applied onto a common substrate. The surface-emitting semiconductor laser layer sequence outside an intended laser region is removed and a region is exposed. An edge-emitting semiconductor layer sequence is applied onto the exposed region over the common substrate, wherein the exposed region is exposed via the removing step, and the exposed region is suitable for transmitting pump radiation into the quantum confinement structure. A current injection path is then formed in the edge-emitting semiconductor layer sequence.

Method for manufacture of optically pumped, surface-emitting semiconductor laser device

Described is a radiation-emitting semiconductor body () with an active layer () for generation of radiation of a first wavelength (&#x3bb;) and a reemission layer () which comprises a quantum well structure () comprising a quantum layer structure () and a barrier layer structure (). The reemission layer is intended for generation of incoherent radiation of a second wavelength (&#x3bb;) by absorption of the radiation of the first wavelength in the barrier layer structure.

Radiation-emitting semiconductor body

An optoelectronic semiconductor component has a semiconductor body () comprising a surface emitting vertical emitter region () comprising a vertical emitter layer (), at least one pump source () provided for optically pumping the vertical emitter layer (), and a radiation passage area () through which electromagnetic radiation () generated in the vertical emitter layer leaves the semiconductor body (), wherein the pump source () and the vertical emitter layer () are at a distance from one another in a vertical direction.

Optoelectronic semiconductor element

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Bad Abbach, Germany

Tony Albrecht