Lumileds LLC

Koninklijke Philips Corporation N.V.

Philips Lighting Holding B.v.

Lumileds Holding B.v.

Toni Lopez

Venkata Ananth Tamma

Reinhold Elferich

Machiel Antonius Martinus Hendrix

Julia Delos Ayllon

Eduardo-Jose Alarcon-Cot

Marcel Rene Bohmer

Isaac Wildeson

Harald Josef Günther Radermacher

Parijat Deb

Robert David Armitage

Nicola Bettina Pfeffer

Mark Melvin Butterworth

Georg Sauerländer

Floris Crompvoets

Theodoros Mihopoulos

Hee-Jin Kim

Matthias Wendt

Marcus Antonius Verschuuren

Yu-Chen Shen

Ronald Johannes Bonne

Kenneth John Vampola

Rafael Ignacio Aldaz

Zhi Hua Song

Ken Shimizu

Abraham Rudolf Balkenende

Thomas Dürbaum

Varun Dev Kakkar

Tobias Georg Tolle

Erik William Young

Rajat Sharma

Cornelis Eustatius Timmering

Aimi Abass

Dennis Scott

Fahong Jin

Jin Fahong

Described are light emitting diode (LED) devices having patterned substrates and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The nucleation layer results in growth of smooth coalesced III-nitride layers over the patterns.

Light emitting diode (LED) devices with nucleation layer

A laterally heterogenous wavelength-converting optical element includes pixel regions surrounded by border regions; each includes down-converting phosphor particles bound by a coating or solid medium. The pixel regions are aligned with LEDs of an array. The phosphor regions differ with respect to one or more of compositions, particle sizes, coating thicknesses, refractive indices, or voids (size, number density, or volume fraction). Those difference(s) can result in the border regions exhibiting larger optical scattering, which can improve contrast of down-converted light emitted by adjacent pixels of the array.

Laterally heterogenous wavelength-converting layer

An LED structure includes an epi layer grown on a substrate and a plurality of dielectric nanoantennas positioned within the epi layer. The dielectric antennas can be periodically arranged to reduce reabsorption of light and redirect oblique incident light to improve overall light coupling efficiency. Each of the dielectric nanoantennas can have a top, a bottom, a height less than 1000 nm and greater than 200 nm and a diameter less than 2000 nm and greater than 300 nm.

Nanocone arrays for enhancing light outcoupling and package efficiency

A system, method and device for use as a reflector for a light emitting diode (LED) are disclosed. The system, method and device include a first layer designed to reflect transverse-electric (TE) radiation emitted by the LED, a second layer designed to block transverse-magnetic (TM) radiation emitted from the LED, and a plurality of ITO layers designed to operate as a transparent conducting oxide layer. The first layer may be a one-dimension (1D) distributed Bragg reflective (DBR) layer. The second layer may be a two-dimension (2D) photonic crystal (PhC), a three-dimension (3D) PhC, and/or a hyperbolic metamaterial (HMM). The 2D PhC may include horizontal cylinder bars, vertical cylinder bars, or both. The system, method and device may include a bottom metal reflector that may be Ag free and may act as a bonding layer.

Nano-photonics reflector for LED emitters

An adaptive lighting system comprises an array of independently controllable LEDs, and a metalens positioned to collimate, focus, or otherwise redirect light emitted by the array of LEDs. The adaptive lighting system may optionally include a pre-collimator positioned in the optical path between the array of LEDs and the metalens.

LED array with metalens for adaptive lighting

This specification discloses LEDs in which the light emitting active region of the semiconductor diode structure is located within an optical cavity defined by a nanostructured layer embedded within the semiconductor diode structure on one side of the active region and a reflector located on the opposite side of the active region from the embedded nanostructured layer. The reflector may, for example, be a conventional specular reflector disposed on or adjacent to a surface of the semiconductor diode structure. Alternatively, the reflector may or comprise a nanostructured layer. The reflector may comprise a nanostructured layer and a specular reflector, with the nanostructured layer disposed adjacent to the specular reflector between the specular reflector and the active region.

LED with active region disposed within an optical cavity defined by an embedded nanostructured layer and a reflector

Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the plurality of mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. Each of the mesas is spaced so that there is a pixel pitch in a range of from 10 μm to 100 μm and dark space gap between adjacent edges of p-contact layer. The dark space gap may be less than 20% of the pixel pitch. The dark space gap may be in a range of from 4 μm to 10 μm.

Light emitting diode devices

A device, system and method for producing enhanced external quantum efficiency (EQE) LED emission are disclosed. The device, system and method include a patterned layer configured to transform surface modes into directional radiation, a semiconductor layer formed as a III/V direct bandgap semiconductor to produce radiation, and a metal back reflector layer configured to reflect incident radiation. The patterned layer may be one-dimensional, two-dimensional or three-dimensional. The patterned layer may be submerged within the semiconductor layer or within the dielectric layer. The semiconductor layer is p-type gallium nitride (GaN). The patterned layer may be a hyperbolic metamaterials (HMM) layer and may include Photonic Hypercrystal (PhHc), or may be a low or high refractive index material or may be a metal.

LED emitters with integrated nano-photonic structures to enhance EQE

A light emitting device comprises a plurality of coherent light sources, and a plurality of light scattering structures. Each light scattering structure is located in an optical path for light output from a different corresponding one of the coherent light sources. Each light scattering structure comprises an arrangement of nanoantennas embedded in an electrically responsive material and electrical contacts by which to apply a voltage to the electrically responsive material. Application of a time varying electrical signal causes the refractive index of the electrically responsive material in a light scattering structure to vary and thereby varies light scattering by the nanoantennas in the light scattering structure. This effect may be used to reduce speckle caused by interference of light output by the coherent light sources.

Speckle reduction in VCSEL arrays

A lighting device is disclosed that includes a plurality of light emitting diodes arranged in an array, a plurality of trenches disposed between and optically isolating the light emitting diodes, and a patterned converter layer disposed over an array surface formed by light emitting surfaces of the light emitting diodes and upper surfaces of the trenches, the patterned converter layers including a first region having a first converter and a second region having a second converter different from the first converter, the first region and second region disposed over different areas of the array surface.

Monolithic multi-color matrix emitter with patterned phosphor layer

A semiconductor light-emitting device includes a junction between doped semiconductor layers, a first set of multiple independent contacts connected to a first doped layer and a second set of one or more contacts connected to the second doped layer. Multiple conductive vias connect the independent contacts to the first doped layer, enabling differing corresponding via currents to be applied to the first doped layer through the vias independent of one another. A spatial distribution of via currents among the multiple vias can be selected to yield a corresponding spatial distribution of emission intensity. Alteration of the via current distribution results in corresponding alteration of the emission intensity distribution; such alterations can be implemented dynamically. Multiple devices can be arranged as a light-emitting array.

Light-emitting device with configurable spatial distribution of emission intensity

A light-emitting device assembly includes an emitter array of light-emitting elements, a transparent substrate, a structured lens, and an angular filter. The emitter array emits from its emission surface output light that is transmitted through the substrate, and enables selective activation of and emission from individual elements or subsets of elements of the array. The structured lens is formed on or in the substrate, and comprises micro- or nano-structured elements resulting in an effective focal length less than an effective distance between the structured lens and the emission surface. The angular filter is positioned on or in the substrate or on the emission surface and exhibits decreasing transmission or a cutoff angle with increasing angle of incidence.

Light-emitting device assembly with emitter array, micro- or nano-structured lens, and angular filter

A semiconductor light-emitting device includes a junction between doped semiconductor layers, a first set of multiple independent contacts connected to a first doped layer and a second set of one or more contacts connected to the second doped layer. Multiple conductive vias connect the independent contacts to the first doped layer, enabling differing corresponding via currents to be applied to the first doped layer through the vias independent of one another. A spatial distribution of via currents among the multiple vias can be selected to yield a corresponding spatial distribution of emission intensity. Alteration of the via current distribution results in corresponding alteration of the emission intensity distribution; such alterations can be implemented dynamically.

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Aachen, Germany

Toni Lopez