Beijing Naura Microelectronics Equipment Co., Ltd.

Tongwen Zhang

Yujie Yang

Wei Xia

Peijun Ding

Hougong Wang

A magnetic thin film laminated structure includes a first layer structure and a second layer structure stacked on the first layer structure. The first layer structure includes an adhesive layer on a substance, the adhesive layer being made of a material having compressive stress, at least one pair of layers on the adhesive layer, each pair of the at least one pair of layers including a magnetic film layer and an isolation layer, and an additional magnetic film layer on the at least one pair of layers. The second layer structure includes another adhesive layer on the first layer structure, another at least one pair of layers on the another adhesive layer, each pair of the another at least one pair of layers including a magnetic film layer and an isolation layer, and another additional magnetic film layer on the another at least one pair of layers.

Magnetic thin film laminated structure and micro-inductive device thereof

A deposition method includes depositing an adhesive layer on a workpiece to be processed and depositing a magnetic/isolated unit, where the magnetic/isolation unit includes at least one pair of a magnetic film layer and an isolation layer that are alternately disposed. The deposition method of the magnetic thin film laminated structure, the magnetic thin film laminated structure and the micro-inductive device provided by the disclosure can increase a total thickness of the magnetic thin film laminated structure, thereby broadening the application frequency range of the inductive device fabricated thereby.

Magnetic thin film laminated structure deposition method

Magnetron, magnetron sputtering chamber, and magnetron sputtering apparatus are provided. The magnetron has a rotation center, and includes a first outer magnetic pole and a first inner magnetic pole of opposite polarities. The first outer magnetic pole has an annular structure around the rotation center. The first inner magnetic pole is located on the inner side of the first outer magnetic pole, and a first magnetic field track is formed between the first inner magnetic pole and the first outer magnetic pole. A straight line starting from the rotation center and along one of the radial directions passes through the first magnetic field track at least twice in succession, and the magnetic-field directions at the two positions of the first magnetic field track that the straight line passes through twice in succession are opposite to each other.

Magnetron, magnetron sputtering chamber, and magnetron sputtering apparatus

The present disclosure provides a magnetic thin film deposition chamber and a thin film deposition apparatus. The magnetic thin film deposition chamber includes a main chamber and a bias magnetic field device. A base pedestal is disposed in the main chamber for carrying a to-be-processed workpiece. The bias magnetic field device is configured for forming a horizontal magnetic field above the base pedestal, and the horizontal magnetic field is used to provide an in-plane anisotropy to a magnetized film layer deposited on the to-be-processed workpiece. The thin film deposition chamber provided in present disclosure is capable of forming a horizontal magnetic field above the base pedestal that is sufficient to induce an in-plane anisotropy to the magnetic thin film.

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Beijing, China

Tongwen Zhang