Taiyuan University of Technology

Tong Zhao

Yuncai Wang

Anbang Wang

Mingjiang Zhang

Jianzhong Zhang

Lijun Qiao

Bingjie Wang

Peixin He

Yi Liu

Yixuan Wang

Yuanyuan Guo

Ya'nan Niu

Longsheng Wang

Tianshuang Lv

An InP-based monolithic integrated chaotic semiconductor laser chip capable of feeding back randomly diffused light, being composed of six regions: a left DFB semiconductor laser, a bidirectional SOA, a left passive optical waveguide region, a doped passive optical waveguide region, a right passive optical waveguide region, and a right DFB semiconductor laser, specifically including: an N+ electrode layer, an N-type substrate, an InGaAsP lower confinement layer, an undoped InGaAsP multiple quantum well active region layer, doped particles, distributed feedback Bragg gratings, an InGaAsP upper confinement layer, a P-type heavily doped InP cover layer, a P-type heavily doped InGaAs contact layer, a P+ electrode layer, a light-emitting region, and isolation grooves. It effectively solves problems of bulky volume of the existing chaotic laser source, the time-delay signature of chaotic laser, narrow bandwidth, and low coupling efficiency of the light and the optical waveguide.

INP-based monolithic integrated chaotic semiconductor laser chip capable of feeding back randomly diffused light

The present invention discloses an integrated broadband chaotic semiconductor laser using optical microcavities. The arc-shaped hexagonal laser outputs light. Part of the light is totally reflected through the deformed microcavity and then reflected out of the deformed microcavity from the passive waveguide II; after entering the passive feedback waveguide, another part of the light is fed back into the deformed microcavity by the high reflection film, passes through an in-cavity ray track and then is also reflected out of the deformed microcavity from the passive waveguide II; the two-path light is coupled into the arc-shaped hexagonal laser, and finally generated chaotic laser light is directionally coupled and output through the passive waveguide I at the other end of the arc-shaped hexagonal laser. The present invention has wide broadband, flat spectrum, compact structure, and no time delay signature.

Integrated broadband chaotic semiconductor laser using optical microcavities

The present invention discloses a high-precision and large-dynamic-range fault monitoring device and method for a WDM-PON. The monitoring device includes a WDM-PON optical network system and an optical network monitoring system. The optical network system includes an OLT I, a feeder fiber II, a 1&#xd7;n AWG III, a branch fiber IV, and an optical network unit V The optical network monitoring system includes an FP laser, a coupler, an optical coupling device, a photodetector, a signal acquisition and processing device, and an optical feedback device, where the FP laser is connected to the coupler; a large-coupling-ratio output end of the coupler is connected to an input end of the optical coupling device, and a small-coupling-ratio output end of the coupler is connected to an input end of the photodetector; the optical coupling device is installed on the feeder fiber II.

High-precision and large-dynamic-range fault monitoring device and method for WDM-PON

The present invention discloses a device and a method for monitoring two-stage faults of a TDM-PON with high precision. A two-stage TDM-PON system includes an OLT I, a feeder fiber II, a stage-1 1:n optical splitter III, a stage-1 branch fiber IV, a stage-2 1:n optical splitter V, a stage-2 branch fiber VI, and an optical network unit (ONU) VII. A two-stage optical network monitoring system includes a monitoring part on the OLT I side and a monitoring part on the ONU VII side, where the monitoring part on the OLT I side includes a control-end isolator-free semiconductor laser, a control-end coupler, a control-end optical coupling device, a control-end photodetector, an integrated signal acquisition and processing device, and an optical coupling device; and the monitoring part on the ONU VII side is similar to the monitoring part of the OLT I side.

Device and method for monitoring two-stage faults of TDM-PON with high precision

A monolithic integrated semiconductor random laser comprising substrate, lower confinement layer on the substrate, active layer on the lower confinement layer, upper confinement layer on the active layer, strip-shaped waveguide layer longitudinally made in middle of the upper confinement layer, Pelectrode layer divided into two segments and made on the waveguide layer and Nelectrode layer on a back face of the lower confinement layer, wherein the two segments correspond respectively to gain region and random feedback region. The random feedback region uses a doped waveguide to randomly feedback light emitted by the gain region and then generates random laser which is random in frequency and intensity. Further, the semiconductor laser is light, small, stable in performance and strong in integration.

Monolithic integrated semiconductor random laser

Growing community of inventors

Taiyuan, China

Tong Zhao