Seagate Technology Incorporated

Tong Zhao

Michael C Kautzky

Yuhang Cheng

Michael Allen Seigler

Sarbeswar Sahoo

Justin Glen Brons

Martin Giles Blaber

Xiaoyue Huang

Scott Michael Franzen

Jie Gong

John Charles Duda

Kurt W Wierman

Ed F Rejda

Sethuraman Jayashankar

William Albert Challener

Mark Ostrowski

Florin Zavaliche

Hui Brickner

YongJun Zhao

Venkateswara R Inturi

Martin Gerard Forrester

Li Wan

Kaizhong Gao

Jie Zou

Dimitar Velikov Dimitrov

Mark Anthony Gubbins

Steven Carl Riemer

Andreas Karl Roelofs

Michael James Hardy

Steve C Riemer

Joachim Walter Ahner

Amit Vasant Itagi

Tae-Woo Lee

Andrew Joseph Boyne

Meng Zhu

Xiaolu Kou

Declan Macken

Roger Lee Hipwell, Jr

Marcus Benedict Mooney

Ibro Tabakovic

Neil Zuckerman

Venkatram Venkatasamy

Andres David Barbosa Neira

Choon How Gan

Francis A McGinnity

Roberto Fernandez Garcia

Vijay Karthik Sankar

Stephen John Wrazien

Jay Jayashankar

Shan Hu

Dierk Guenter Bolten

Lance Edward Nevala

James Gary Wessel

Weibin Chen

Philip George Pitcher

Douglas Hampton Cole

Yi-Kuei Ryan Wu

Robert Anthony Fernandez

Cedric Bedoya

Vankateswara Rao Inturi

XiaoYue Phillip Huang

Michael Christopher Kautzky

A method involves forming a metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. A surface of the metal layer defines a first metal bonding layer. A second metal bonding layer is provided on a target substrate having recording head subassemblies. Mating surfaces of the first and second metal bonding layers are activated and the carrier wafer is flipped and joined with the target substrate such that the first and second metal bonding layers are bonded and the metal layer is integrated with the recording head as a near-field transducer.

Single-grain near-field transducer and process for forming same

A method of forming a thin film structure involves performing one or more repetitions to form a template on a wafer. The repetitions include: depositing a layer of a template material to a first thickness T1; and ion beam milling the layer of the template material to remove thickness T2, where T2<T1, resulting in a layer of the template material with thickness T1−T2. The ion beam milling is performed at a channeling angle relative to a deposition plane of the wafer, the channeling angle defined relative to a channeling direction of a crystalline microstructure of the template material. After the repetitions, additional material is deposited on the template to form a final structure. The additional material has a same crystalline microstructure as the template material.

Thin-film crystalline structure with surfaces having selected plane orientations

A method comprises forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. The method comprises forming a first bonding layer on the single-crystal-like metal layer. The method also comprises forming a second bonding layer on a dielectric layer of a target substrate, the target substrate comprising one or more recording head subassemblies. The bonding layers may include diffusion layers or dielectric bonding layers. The method further comprises flipping and joining the carrier wafer with the target substrate such that the first and second diffusion layers are bonded and the single-crystal-like metal layer is integrated with the recording head as a near-field transducer.

A heat-assisted magnetic recording head includes a first feature, a second feature, and a bilayer adhesion structure. The first feature includes a first primary metal. The second feature includes an oxide region, and a mixed metal oxide adhesion layer that is adhered to the oxide region and provided on a surface of the second feature. The bilayer adhesion structure includes the mixed metal oxide adhesion layer of the second feature, and a metal adhesion layer. The metal adhesion layer is disposed between and adhered to the first feature and the mixed metal oxide adhesion layer of the second feature. The metal adhesion layer includes a second primary metal that is different than the first primary metal.

Heat-assisted magnetic recording head with a bilayer adhesion structure

A hard disk drive (HDD) includes a heat-assisted magnetic recording (HAMR) head. The HAMR head includes one or more features comprising a nanoparticle-reinforced plasmonic matrix. The nanoparticle-reinforced plasmonic matrix comprises a plasmonic metal and a plurality of nanoparticles dispersed in the plasmonic metal. The nanoparticles comprise a transparent conductive oxide.

Heat-assisted magnetic recording head with nanoparticles

A near-field transducer or heat sink is formed via a first process. The near-field transducer or heat sink is transfer-printed to a read/write head via a second process.

Transfer-printed near-field transducer and heat sink

A method includes forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a sacrificial wafer. An anchor layer is formed on the single-crystal-like metal layer. The single-crystal-like metal layer is separated from the sacrificial wafer via the anchor layer. The single-crystal-like metal layer is transported via the anchor layer to a target substrate having one or more recording head subassemblies. The single-crystal-like metal layer is joined with the recording head, the single-crystal-like metal layer being integrated with the recording head as a near-field transducer.

Processing for forming single-grain near-field transducer

A thin film structure (e.g., a near-field transducer), includes a first surface parallel to a substrate on which the thin film structure is deposited and two other surfaces orthogonal to the first surface. The first surface and the two other surfaces have respective first, second, and third selected plane orientations with respective first, second, and third atomic packing factors. The first, second, and third selected plane orientations are selected to maximize an average of the first, second, and third atomic packing factors.

Methods of forming a near field transducer (NFT), the methods including the steps of depositing plasmonic material on a substrate; laser annealing at least a portion of the deposited plasmonic material at a wavelength from 100 nm to 2.0 micrometers (&#x3bc;m) to induce liquid phase epitaxy (LPE) in the annealed deposited plasmonic material to form a epitaxially modified plasmonic material; and forming a NFT from at least a portion of the epitaxially modified plasmonic material are disclosed as well as other methods and devices such as those formed.

Methods of forming materials

Devices having an air bearing surface (ABS), the device including a near field transducer, the near field transducer having a peg and a disc, the peg having a region adjacent the ABS, the peg including a plasmonic material selected from gold (Au), silver (Ag), copper (Cu), ruthenium (Ru), rhodium (Rh), aluminum (Al), or combinations thereof; and at least one other secondary atom selected from germanium (Ge), tellurium (Te), aluminum (Al), antimony (Sb), tin (Sn), mercury (Hg), indium (In), zinc (Zn), iron (Fe), copper (Cu), manganese (Mn), silver (Ag), chromium (Cr), cobalt (Co), and combinations thereof, wherein a concentration of the secondary atom is higher at the region of the peg adjacent the ABS than a concentration of the secondary atom throughout the bulk of the peg. Methods of forming NFTs are also disclosed.

Near-field transducer having secondary atom higher concentration at bottom of the peg

A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

Materials for near field transducers and near field transducers containing same

Heat assisted magnetic recording (HAMR) devices that includes a near field transducer, the near field transducer including alloys of a first element selected from: platinum (Pt), palladium (Pd), rhodium (Rh), iridium (Ir), ruthenium (Ru), and osmium (Os); and a second element selected from; hafnium (Hf), niobium (Nb), tantalum (Ta), titanium (Ti), vanadium (V), and zirconium (Zr).

Near field transducers including platinum group alloys

A device including a near field transducer, the near field transducer including gold (Au), silver (Ag), copper (Cu), or aluminum (Al), and at least two other secondary atoms, the at least two other secondary atoms selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), germanium (Ge), hydrogen (H), iodine (I), rubidium (Rb), selenium (Se), terbium (Tb), nitrogen (N), oxygen (O), carbon (C), antimony (Sb), gadolinium (Gd), samarium (Sm), thallium (Tl), cadmium (Cd), neodymium (Nd), phosphorus (P), lead (Pb), hafnium (Hf), niobium (Nb), erbium (Er), zinc (Zn), magnesium (Mg), palladium (Pd), vanadium (V), zinc (Zn), chromium (Cr), iron (Fe), lithium (Li), nickel (Ni), platinum (Pt), sodium (Na), strontium (Sr), calcium (Ca), yttrium (Y), thorium (Th), beryllium (Be), thulium (Tm), erbium (Er), ytterbium (Yb), promethium (Pm), neodymium (Nd cobalt (Co), cerium (Ce), lanthanum (La), praseodymium (Pr), or combinations thereof.

Materials for near field transducers, near field tranducers containing same, and methods of forming

Devices that include a write pole; a near field transducer (NFT) that includes a peg and a disk, wherein the peg is at the ABS of the device; and a diffusion barrier layer positioned between the write pole and the peg of the NFT, the diffusion barrier layer including metals, nitrides, oxides, carbides, silicides, or amorphous material.

Devices including a diffusion barrier layer

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Eden Prairie, MN, United States of America

Tong Zhao