Hewlett-packard Development Company, L.p.

Sandisk Technologies Inc.

Other

Sandisk 3d LLC

Leland Stanford Junior University

Applied Materials, Inc.

Hewlett-packard Company

Entit Software LLC

Tong Zhang

Johann Alsmeier

James K Kai

Steven J Simske

Daniel R Tretter

Jixin Yu

Hiroyuki Ogawa

Wei Zhang

Satoshi Shimizu

Daniel Robert Blakley

Zhenyu Lu

Yasuo Kasagi

Ramin Samadani

Zhixin Cui

Murshed Chowdhury

Daxin Mao

Yohei Masamori

Lei Wang

Roy E Scheuerlein

Yanli Zhang

Hui Chao

Henry Chien

Joan Savall

Hyun Jin Kim

Peng Wu

Jin Liu

Perumal Ratnam

Mark Jacob Schnitzer

Zhida Lan

Kensuke Yamaguchi

Georgia Koutrika

Kota Funayama

Kun Hou

Chun Ge

Yu-Yao Chang

Wenguang Shi

Sam Liu

Jun Xiao

Timothy James Minvielle

Raghuveer S Makala

Masaaki Higashitani

Hem P Takiar

Christopher John Petti

Gerrit Jan Hemink

Man Lung Mui

Jayavel Pachamuthu

D Amnon Silverstein

Min Wang

Yao-Sheng Lee

Qian Lin

Ullas Gargi

Fumiaki Toyama

Paul A Friedman

Wipul Jayasekara

Yung-Tin Chen

Wei Zhao

Masanori Tsutsumi

Ning Ye

Jian Fan

Steven J Radigan

Chun-Ming Wang

Gary Lee Vondran, Jr

Huitao Luo

Pere Obrador

Jerry J Liu

Gideon Amir

Padmapani Nallan

Charles J Bruce

Steven Patrick Maxwell

Shinsuke Yada

Stephen Philip Cheatle

Xiaofan Lin

Mitsuteru Mushiga

Yining Deng

Eamonn O'Brien-Strain

Simon Widdowson

Hisakazu Otoi

Ken Kengkuan Lin

C Brian Atkins

Clayton Atkins

Yoichiro Tanaka

Vance Dunton

Mei Chen

Tadashi Nakamura

Chu-Chen Fu

Sayako Nagamine

Lei Liu

Yangming Liu

Virend K Somers

Yong Wang

Ying Ying Li

Xiaolong Hu

Akihisa Sai

Bin Bai

Jiyin Xu

Xun Wang

Zhongli Ji

Yuli Gao

Koji Miyata

A system that uses biometric data to facilitate learning is provided herein. The system receives at least two data points via a biometric sensor. Information is extracted from the at least two data points and a set of features are identified. Data analysis is then performed on the set of features.

Biometric data to facilitate learning

A substrate semiconductor layer is attached to a carrier substrate through a sacrificial bonding material layer. A plurality of semiconductor dies included within continuous material layers are formed on a front side of the substrate semiconductor layer. Each of the continuous material layers continuously extends over areas of the plurality of semiconductor dies. A plurality of dicing channels is formed between neighboring pairs among the plurality of semiconductor dies by anisotropically etching portions of the continuous material layers located between neighboring pairs of semiconductor dies. The plurality of dicing channels extends to a top surface of the sacrificial bonding material layer. The sacrificial bonding material layer is removed selective to materials of surface portions of the plurality of semiconductor dies using an isotropic etch process. The plurality of semiconductor dies is singulated from one another upon removal of the sacrificial bonding material layer.

Semiconductor die singulation using a sacrificial bonding material layer and an anisotropic channel etch

Example implementations relate to authentication using a sequence of images. For example, a computing device may include an input device to receive data from a user and a processor in communication with the input device. The processor provides a request for a private key associated with the user, where the request includes a public key specifying a set of categories each relating to an object. The processor receives, via the input device, the private key in response to the request, where the private key includes a sequence of images based on the public key. The processor authenticates the user when each image in the sequence of images is associated with a particular object previously assigned to the user based on the set of categories.

Authentication using sequence of images

Imaging a package to identify contents associated with the package includes with a camera of a point of sale (POS) system, imaging the package, where an identical identification mark is located on all sides of the package such that when an image of the package is captured, an image of the identification mark appears in the image irrespective of an orientation of the package to the camera and with a database, identifying the contents associated with the package based on the identification mark from the image.

Imaging a package to identify contents associated with the package

Memory dies on a wafer may include multiple memory blocks including bit lines extending along different directions. A memory die may include a first-type plane including first memory blocks and a second-type plane including second memory blocks. In this case, memory blocks having different bit line directions may be formed within a same memory die. An exposure field may include multiple types of memory dies that are oriented in different orientations. The bit line directions may be oriented differently in the multiple types of memory dies. Each lithographic exposure process may include a first step in which lithographic patterns in first exposure fields are oriented in one direction, and a second step in which lithographic patterns in second exposure fields are oriented in another direction. The different orientations of bit lines and word lines may change local directions of stress to reduce wafer distortion.

Memory die having wafer warpage reduction through stress balancing employing rotated three-dimensional memory arrays and method of making the same

A system includes a plurality of summarization engines, each summarization engine to receive video content, via a processing system, and to provide a summary of the video content, thereby providing a plurality of summaries of the video content. The system includes a plurality of meta-algorithmic patterns, each meta-algorithmic pattern to be applied to at least two of the summaries to provide, via the processing system, a meta-summary of the video content using the at least two summaries, thereby providing a plurality of meta-summaries of the video content. The system includes an evaluator to evaluate the plurality of summaries and the plurality of meta-summaries and to determine similarity measures of the video content over each given class of a plurality of classes of video content, and to select a class of the plurality of classes based on the determined similarity measures.

Video content summarization and class selection

Multiple tier structures are stacked over a substrate. Each tier structure includes an alternating stack of insulating layers and sacrificial material layers and a retro-stepped dielectric material portion overlying the alternating stack. Multiple types of openings are formed concurrently during formation of each tier structure. Openings concurrently formed through each tier structure can include at least two types of openings that may be selected from through-tier memory openings, through-tier support openings, and through-tier staircase-region openings. Each through-tier opening is filled with a respective through-tier sacrificial opening fill structure. Stacks of through-tier sacrificial opening fill structures can be removed in stages to form various device components, which include memory stack structures, support pillar structures, and staircase-region contact via structures. The sacrificial material layers are replaced with electrically conductive layers, which are laterally electrically isolated from the staircase-region contact via structures by annular insulating spacers.

Three-dimensional memory device and method of making the same using concurrent formation of memory openings and contact openings

A first-tier structure including a first alternating stack of first insulating layers and first spacer material layers is formed over a substrate. First-tier memory openings and at least one type of first-tier contact openings can be formed simultaneously employing a same anisotropic etch process. The first-tier contact openings formed over stepped surfaces of the first alternating stack may extend through the first alternating stack, or may stop on the stepped surfaces. Sacrificial first-tier opening fill portions are formed in the first-tier openings, and a second-tier structure can be formed over the first-tier structure. Memory openings including volumes of the first-tier memory openings are formed through the multi-tier structure, and memory stack structures are formed in the memory openings. Various contact openings are formed through the multi-tier structure, and various contact via structures are formed in the contact openings.

Concurrent formation of memory openings and contact openings for a three-dimensional memory device

A etch stop semiconductor rail is formed within a source semiconductor layer. A laterally alternating stack of dielectric rails and sacrificial semiconductor rails is formed over the source semiconductor layer and the etch stop semiconductor rail. After formation of a vertically alternating stack of insulating layers and spacer material layers, memory stack structures are formed through the vertically alternating stack and through interfaces between the sacrificial semiconductor rails and the dielectric rails. A backside trench is formed through the vertically alternating stack employing the etch stop semiconductor rail as an etch stop structure. Source strap rails providing lateral electrical contact to semiconductor channels of the memory stack structures are formed by replacement of sacrificial semiconductor rails with source strap rails.

Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device

An array of memory stack structures extends through an alternating stack of insulating layers and electrically conductive layers over a substrate. An array of drain select level assemblies including cylindrical electrode portions is formed over the alternating stack with the same periodicity as the array of memory stack structures. A drain select level isolation strip including dielectric materials can be formed between a neighboring pair of drain select level assemblies employing the drain select level assemblies as a self-aligning template. Alternatively, cylindrical electrode portions can be formed around an upper portion of each memory stack structure. Strip electrode portions are formed on the cylindrical electrode portions after formation of the drain select level isolation strip.

Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the same

Sacrificial semiconductor material portions are connected by a sacrificial semiconductor line extending along a different horizontal direction and protruding into an underlying source conductive layer. After formation of a vertically alternating stack of insulating layers and spacer material layers, memory stack structures are formed through the vertically alternating stack and through the sacrificial semiconductor material portions. A backside trench can be formed through the vertically alternating stack employing the sacrificial semiconductor line as an etch stop structure. Source strap material portions providing lateral electrical contact to semiconductor channels of the memory stack structures can be formed by replacement of sacrificial semiconductor material portions and the sacrificial semiconductor line with source strap material portions. Structural-reinforcement portions may be employed to provide structural stability during the replacement process.

The contact area between a source strap structure of a buried source layer and semiconductor channels within memory structures can be increased by laterally expanding a source-level volume in which the memory stack structures are formed. In one embodiment, sacrificial semiconductor pedestals can be formed in source-level memory openings prior to formation of a vertically alternating stack of insulating layers and sacrificial material layers. Memory openings can include bulging portions formed by removal of the sacrificial semiconductor pedestals. Memory stack structures can be formed with a greater sidewall surface area in the bulging portions to provide a greater contact area with the source strap structure. Alternatively, bottom portions of memory openings can be expanded selective to upper portions during, or after, formation of the memory openings to provide bulging portions and to increase the contact area with the source strap structure.

Examples associated with keyframe annotation are disclosed. One example includes extracting a set of keyframes from a video presentation. A subset of the keyframes is selected to present to a user based on a user preference. Annotations are generated for the subset of the keyframes. The annotations are personalized to the user. The subset of the keyframes and the annotations are presented to the user.

Keyframe annotation

Growing community of inventors

Palo Alto, CA, United States of America

Tong Zhang