Intermolecular, Inc.

Guardian Industries Corporation

Guardian Glass, LLC

Tong Ju

Minh Le

Guowen Ding

Guizhen Zhang

Daniel Schweigert

Jeremy Cheng

Zhi-Wen Sun

Phil Lingle

Yongli Xu

Brent Boyce

Sandeep Nijhawan

Jianhua Hu

Teresa B Sapirman

Heng Kai Hsu

Minh Huu Le

Low emissivity panels can include a separation layer of ZnSnObetween multiple infrared reflective stacks. The low emissivity panels can also include NiNbTiOas barrier layer. The low emissivity panels have high light to solar gain, color neutral, together with similar observable color before and after a heat treatment process.

Method to generate high LSG low-emissivity coating with same color after heat treatment

Disclosed herein are systems, methods, and apparatus for forming low emissivity panels. A first dielectric layer is disposed over a substrate and includes a bi-metal oxide having tin and bismuth or niobium. A seed layer is disposed directly on the first dielectric layer. A reflective layer including silver is disposed directly on the seed layer. A barrier layer is disposed above the reflective layer. The barrier layer includes one of a nickel chromium titanium aluminum alloy or a nickel chromium titanium aluminum oxide. The nickel chromium titanium aluminum alloy or the nickel chromium titanium aluminum oxide includes between about 5% and about 10% by weight nickel, between about 25% and about 30% by weight chromium, between about 30% and about 35% by weight titanium, and between about 30% and about 35% by weight aluminum.

Low-emissivity glass including spacer layers compatible with heat treatment

Methods, and coated panels fabricated from the methods, are disclosed to form multiple coatings, (e.g., one or more infrared reflective layers), with minimal color change before and after heat treatments. For example, by adding appropriate seed layers between the IR reflective layers and the base oxide layers, the color performance can be maintained regardless of high temperature processes. The optical filler layers can include a metal oxide layer. In some embodiments, the seed layer can include nickel, titanium, and niobium, forming a nickel titanium niobium alloy such as NiTiNb.

Seed layer for low-e applications

Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. A dielectric layer is formed between the transparent substrate and the reflective layer. The dielectric layer includes niobium, tin, and aluminum.

Low-e panels and methods for forming the same

Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A low-e stack is formed above the transparent substrate. Each of the layers of the low-e stack are formed to have a specific thickness to tune the performance characteristics of the low-e panel.

Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. A metal oxide layer is formed between the transparent substrate and the reflective layer. A base layer is formed between transparent substrate and the metal oxide layer. The base layer has a first refractive index. A dielectric layer is formed between the base layer and the metal oxide layer. The dielectric layer has a second refractive index.

Low-E panels and methods for forming the same

Low emissivity panels can include a protection layer of silicon nitride on a layer of ZnO on a layer of ZnSnO. The low emissivity panels can also include NiNbTiOas a barrier layer. The low emissivity panels have high light to solar gain, color neutral, together with similar observable color and light transmission before and after a heat treatment process.

Color shift of high LSG low emissivity coating after heat treatment

Transparent ohmic contacts to p-GaN and other high-work-function (&#x2267;4.2 eV) semiconductors are fabricated from zinc stannate (e.g., ZnSnO). ZnO and SnOmay be sputtered from separate targets and annealed to form the zinc stannate. The Zn:Sn ratio may be tuned over the range between 1:2 and 2:1 to optimize bandgap, work function, conductivity, and transparency for the particular semiconductor and wavelength of interest. Conductivity may be improved by crystallizing the zinc stannate, by doping with up to 5 wt % Al or In, or both.

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Santa Clara, CA, United States of America

Tong Ju