Nippon Electric Co., Ltd.

Tonao Yuasa

Hiroo Yonezu

Masayasu Ueno

Izuo Hayashi

Isamu Sakuma

Katsuhiko Nishida

Yasuo Nannichi

Taibun Kamejima

Toshio Uji

A semiconductor laser device in which at least one of the main surfaces of a semiconductor laser crystal body which generates heat during operation is brought into thermal contact with a silicon crystal heat-sink body.

Semiconductor laser device equipped with a silicon heat sink

An injection semiconductor laser having an active region normal to the reflecting surfaces includes an ohmic metal film on the side of the heat sink near the active region. The ohmic metal film is plated with a layer of a thermally conductive material. The shape and dimensions of the plated layer are selected to protect the laser from being damaged when the laser device is bonded to the heat sink, and also to prevent light rays emerging through one of the reflecting surfaces from impinging on the surface of the heat sink.

Injection semiconductor laser device

Growing community of inventors

Tokyo, Japan

Tonao Yuasa