Seiko Instruments Inc

Sii Semiconductor Corporation

Tomoyuki Yoshino

Yoshikazu Kojima

Hiroaki Takasu

Kunihiro Takahashi

Tsuneo Yamazaki

Masaaki Mandai

Hitoshi Niwa

Nobuyoshi Matsuyama

Hitoshi Takeuchi

Osamu Koseki

Yutaka Saito

Hironobu Itoh

Takichi Ishii

Masao Kasuga

Yutaka Saitoh

Makoto Suzuki

Keitaro Koroishi

Tadao Akamine

Junko Yamanaka

A semiconductor device comprises a semiconductor chip mounted on an island, and a plurality of leads spaced form the island and connected by wires to the semiconductor chip. An insulating film encapsulates the island, the semiconductor chip, the wires and the leads, and the insulating resin has a concave portion that is in contact with the leads. Each lead has a bottom surface exposed from the insulating resin, and the concave portion of the insulating resin exposes side surfaces which surround the bottom surface of each of the leads located under a bottom surface of the insulating resin. When the semiconductor device is soldered to a circuit board, the concave portion prevents contact between the solder and the insulating resin and improves self-alignment of the semiconductor device on the circuit board.

Semiconductor device having flat leads

A semiconductor flat package has a semiconductor chip, leads connected to the semiconductor chip, and an encapsulation resin covering the semiconductor chip and partially covering the leads. Outer end surfaces of the leads are exposed from the encapsulation resin and covered with a plated layer, and a side end surface of the plated layer and a side end surface of the encapsulation resin are flush with each other. A material with good solder wettability is formed at a lead cut portion of the semiconductor flat package, to thereby improve solder connection strength with a circuit board. A solder fillet is formed from the lead cut portion of the semiconductor package, to thereby enable adaptation of solder automatic visual inspection after mounting.

Semiconductor device

A semiconductor device has an element encapsulated in a resin mold. Metal leads protruding from the resin mold are solder plated except at the lead-tip end surfaces, and the exposed lead-tip end surfaces have an area less than half the cross-sectional area of the protruding metal leads. The semiconductor device is manufactured using a lead frame in which the metal leads are connected to a frame by plating bars having a thickness smaller than half the thickness of the metal leads. In another embodiment, the metal leads are connected to the frame by plating bars that extend sideways from the metal leads, and the end tips of the metal leads are entirely covered with plating to improve soldering wettability.

Semiconductor device and lead frame used to manufacture semiconductor device

A piezoelectric actuator is formed in a manner which enhances the identifying function of markings provided thereon, and minimizes the influence on the markings when an electrode pattern on the piezoelectric actuator is shifted. The piezoelectric actuator has a piezoelectric element, an electrode pattern formed thereon, and at least one identifying marking formed on the electrode pattern, each identifying marking having a shape comprising multiple sides and being formed at a specific location of the electrode pattern for use in identifying a characteristic of the electrode pattern. In one embodiment, the piezoelectric element has a disk shape, the electrode pattern comprises a plurality of electrodes provided on an inner side of the piezoelectric element, selected electrodes being connected to each other in a desired pattern, and the identifying marking is formed on the electrode pattern proximate a peripheral edge of the piezoelectric-element and has at least three straight sides so that the area of the identifying marking is based on the length of its sides rather than a radius. Thus, shifting of the identifying marking with respect to the curved peripheral edge of the disk-shaped piezoelectric element results in reduction in area of the identifying marking on a linear basis rather than based on a squared value of a radius. In another embodiment, a plurality of identifying markings are arranged in a spaced-apart relation on the piezoelectric element.

Piezoelectric actuator and method of compensating direction thereof

The semiconductor image sensor device of the multiple chip mount type is constructed such that electrical and mechanical connections are carried out concurrently among chips. Coupling chips 4 are utilized to couple a plurality of semiconductor image sensor chips 1 with each other, and the couple one semiconductor image sensor chip 1 to a driver substrate 3 which mounts thereon a semiconductor driving chip 2 for driving the semiconductor image sensor chips 1.

Semiconductor sensor device comprised of plural sensor chips connected

An ultrasonic motor in which a voltage is applied to a piezoelectric element by using a lead board. To fabricate the motor in a simplified manner, it is so constructed that a plurality of conductive patterns on the lead board are joined to a plurality of electrodes formed on the piezoelectric element by solder or the like, the piezoelectric element and the lead board are prevented from contacting each other by bending the conductive patterns to form a gap, then a voltage is applied to the lead board, thereby realizing the drive.

Ultrasonic motor

A semiconductor device comprises at least two semiconductor elements connected together at a connecting region of the semiconductor elements. At least one joint chip is adhered to the connection region of the semiconductor elements for connecting the semiconductor elements together. The joint chip has a trapezoidal cross-section defining a first surface and a second surface wider than the first surface. The second surface of the joint chip is adhered to the connection region of the semiconductor elements.

Semiconductor device having a trapezoidal joint chip

An avalanche photodiode for detecting x-rays and other radiation comprises a first substrate having a portion removed therefrom, a first insulating film formed on the first substrate, a second substrate comprising a floating zone silicon semiconductor substrate disposed on the first insulating film, an impurity region selectively formed in the second substrate at a surface corresponding to the removed portion, a PN junction formed on the second substrate, a glass substrate mounted to the second substrate, a first electrode formed on the first substrate for applying a voltage to the impurity region, a second electrode formed on the second substrate for applying a voltage to the second substrate, a third electrode formed on the glass substrate and electrically connected to the second electrode, and an integrated circuit package having a lead pin connected to the third electrode. Accordingly, a shallow depletion layer may be provided on a floating zone SOI substrate. The substrates may be joined to the glass substrate using a eutectic bonding process.

Avalanche photodiode for light detection

Semiconductor device composed of plural semiconductor chips and coupling

A process for manufacturing a light valve device comprises forming a transparent insulating thin film layer on a surface of a semiconductor substrate, and forming a single crystal semiconductor thin film on a surface of the transparent insulating thin film layer. A portion of the single crystal semiconductor thin film is then removed and at least one pixel electrode is formed on the transparent insulating thin film layer at a region where the single crystal semiconductor thin film has been removed. A driving unit is then formed in the single crystal semiconductor thin film. Thereafter, a carrier substrate is laminated using an adhesive on the surface of the semiconductor substrate at a region corresponding to the pixel electrode and the driving unit. The semiconductor substrate is then removed to expose a surface of the transparent insulating thin film layer and through-holes and a metal film are formed on the exposed surface thereof. Thereafter, the metal film is removed to form a light shielding layer for covering at least a portion of a region of the transparent insulating thin film layer occupied by the driving unit and to form an electrode pad for connection to the driving unit through the through-holes. A substrate is then arranged opposite to the transparent insulating thin film to define a gap therebetween, and an electrooptical material is disposed in the gap.

Process for manufacturing light valve device using semiconductive

A process for fabricating a semiconductor device which permits the placement of plural semiconductor chip devices at a reduced pitch comprises the steps of bonding a plurality of semiconductor chip devices to a substrate, forming a conductive thin film on the substrate to cover at least connecting regions of the semiconductor chip devices, and patterning the conductive thin film using an excimer laser to form interconnections between the respective semiconductor chip devices. The conductive thin film is formed by a method selected from physical vapor deposition and chemical vapor deposition. The step of bonding the semiconductor chip devices to a substrate is preferably performed using an epoxy-based adhesive. Preferably, an insulating film is formed on the plural semiconductor chip devices in regions except for the connection regions. Patterning of the conductive thin film is performed using an excimer laser beam emitted in two pulses at an output energy of 300 mJ/cm.sup.2.

Semiconductor device and process for fabricating the same

A process for manufacturing a semiconductor device comprises forming an SOI substrate by depositing an insulating film of silicon dioxide on a surface of a temporary silicon substrate, thermally bonding a semiconductor substrate of single crystal silicon on a surface of the insulating film, and polishing the semiconductor substrate to form a single crystal semiconductor thin film. A semiconductor integrated circuit is then formed in the single crystal semiconductor thin film. Thereafter, a support substrate is fixedly adhered in face-to-face relation to a surface of the semiconductor integrated circuit opposite to the temporary substrate. The temporary substrate is then removed to expose a surface of the insulating film. The exposed surface of the insulating film is then subjected to a treatment including at least forming an electrode.

Method of making light valve device using semiconductive composite

Herein disclosed are a semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film formed integrally with transistor elements is laminated on an insulating thin film and is formed with through holes and in which the insulating thin film is formed on its back with electrodes and a shielding film, and a light valve device using the semiconductor device. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate, which is formed with electrodes and a shielding film at the opposed side of the insulating film to the side formed with the grouped elements through the insulating film, and a transparent opposite substrate, so that the optical transparency of the electrooptical substance is controlled by the switching elements.

Light valve device using semiconductive composite substrate

A semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film is formed integrally with transistor elements and is laminated on an insulating thin film. The single crystal semiconductor thin film is formed with through-holes and the insulating thin film is formed on its back side with electrodes and a shielding film. A light valve device using the semiconductor device is also disclosed. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate. The multi-layer substrate is formed with electrodes and a shielding film at the opposed side of the insulating film to the side formed with the grouped elements through the insulating film. A transparent opposite substrate is also formed so that the optical transparency of the electrooptical substance is controlled by the switching elements.

Growing community of inventors

Chiba, Japan

Tomoyuki Yoshino