Sanyo Electric Co., Ltd.

Tomoyuki Yoshie

Yuji Hishida

An object formed of a semiconductor is heated to and kept at such a temperature that a semiconductor crystal formed of a II-VI Group compound semiconductor mainly containing Zn and Se can be grown. A molecular beam including elements constituting the II-VI Group compound semiconductor mainly containing Zn and Se is irradiated onto the heated object, and a gas beam composed of a nitrogen molecule being in a ground electronic state and having a gas pressure of not less than 3.times.10.sup.-5 Torr, to form a p-type semiconductor crystal on the object.

Growing community of inventors

Muko, Japan

Tomoyuki Yoshie