Hitachi-kokusai Electric Inc.

Kokusai Electric Corporation

Hitachi Kokusai Electronics Inc.

Tomoyuki Yamada

Seiyo Nakashima

Masakazu Shimada

Shinobu Sugiura

Yukinori Aburatani

Takashi Nogami

Masaaki Ueno

Masashi Sugishita

Tadashi Kontani

Satoshi Aizawa

Mitsuhiro Nagata

Tetsuya Kosugi

Takashi Ozaki

Hitoshi Murata

Unryu Ogawa

Masanori Okuno

Akira Hayashida

Masakazu Sakata

Toshihiko Yonejima

Kenji Kanayama

Mikio Ohno

Takeshi Kasai

Masayuki Yamada

Kanako Kitayama

Mamoru Oishi

Katsuaki Nogami

Hiroki Okamiya

Yuichi Matsuda

Shigenori Tezuka

According to one aspect of the technique, there is provided a configuration including: a furnace body covering a reaction chamber; a heating element divided into zones and provided in the furnace body; first temperature sensors provided for the zones such that its temperature measuring point is arranged near the heating element; second temperature sensors provided such that its temperature measuring point is provided close to a temperature measuring point of a first temperature sensor; and temperature meters provided at the zones to hold the temperature measuring points of the first and the second temperature sensors to be close to each other in a protection pipe. Each temperature meter penetrates an outer periphery of the furnace body perpendicular to a central axis of the reaction chamber such that a front end of the protection pipe is located outside the reaction tube and on a tube axis thereof.

Substrate processing apparatus, method of manufacturing semiconductor device and heater

There is provided a technique that includes a process chamber configured to process a substrate; a processing gas supply part configured to supply a processing gas to the substrate; a heater configured to heat the substrate; a transfer robot configured to transfer the substrate; a first power supply connected to at least one part selected from the group of the processing gas supply part, the heater, and the transfer robot; a first controller installed between the at least one part and the first power supply; a second power supply including two or more power sources configured to drive the first controller; and a second controller installed between the first controller and the second power supply and configured to allow power to be supplied to the first controller while setting a power ratio of each of the two or more power sources of the second power supply to a predetermined value.

Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

There is installed a configuration that includes a process container; a heater chamber exhaust duct configured to discharge an air that has cooled a space at which a heater is installed; a gas box exhaust duct configured to suck and discharge an atmosphere in a gas box; a scavenger exhaust duct configured to suck and discharge an atmosphere in a scavenger; a local exhaust duct configured to suck and discharge an atmosphere in a local exhaust port installed in a transfer chamber; an exhaust damper valve including an opening degree variable mechanism installed in at least one selected from the group of the heater chamber exhaust duct, the gas box exhaust duct, the scavenger exhaust duct, and the local exhaust duct; and a controller configured to remotely control an opening degree of the exhaust damper valve.

A configuration capable of increasing an exhaust capability of an apparatus without degrading an operation of the apparatus includes: a processing furnace; an exhaust unit configured to exhaust a gas from a process chamber defined by the processing furnace, the exhaust unit having a first sidewall and a second sidewall opposite to the first sidewall; and an exhaust device disposed adjacent to the exhaust unit and connected to the exhaust unit via a connecting pipe provided with a vibration-absorbing member, the exhaust device having a first sidewall and a second sidewall opposite to the first sidewall, wherein the processing furnace, the exhaust unit and the exhaust device are disposed on a same plane, and only the first sidewall of the first and the second sidewalls of the exhaust device is disposed in a space defined by extensions of the first and the second sidewalls of the exhaust unit.

Substrate processing apparatus, exhaust system and method of manufacturing semiconductor device

A substrate processing apparatus includes a holder configured to hold a substrate and carry the substrate into a process chamber, a waiting station located outside the process chamber in which the holder waits prior to carrying the substrate into the process chamber, a circulation path configured to circulate a gas throughout the waiting station, and an exhaust path formed in the circulation path and configured to exhaust the gas from the waiting station.

Substrate processing apparatus

A gas flow of a gas pipe is indicated before an electromagnetic valve is actually opened, so that the electromagnetic valve can be prevented from being opened or closed by a wrong manipulation or hazards caused by undesired mixing of gases can be avoided so as to improve safety. The substrate processing apparatus includes a state detection unit configured to detect an opening/closing request state and an opening/closing state of a valve installed at a gas pipeline; and a indication unit configured to indicate a gas flow state of the gas pipeline predicted according to the opening/closing request state and a gas flow state of the gas pipeline when the valve is opened, in a way that each state is distinguished.

In a substrate processing apparatus, a process vessel is configured to accommodate and process a substrate held at a horizontal position. A gas introduction port is installed at a periphery of a first side of the process vessel and configured to introduce gas into the process vessel from a lateral direction of the substrate. A gas exhaust port is installed at a second side of the process vessel which is opposite to the first side, and is configured to exhaust gas inside the process vessel from a lateral direction of the substrate. A slope part is installed between the gas introduction port and the gas exhaust port inside the process vessel, and is configured to guide a flow path of the gas introduced into the process vessel.

Substrate processing apparatus, method for manufacturing semiconductor device, and process tube

A substrate processing apparatus detects malfunction of mechanisms in MFC. An inert gas supply line, a first shut-off valve shutting off the inert gas supply, a process gas supply line, and a second shut-off valve shutting off the process gas supply are installed upstream of the MFC. A gas supply pipe connected to a process chamber, a third shut-off valve shutting off gas supply to the gas supply pipe, an exhaust vent line which is exhaustible, and a fourth shut-off valve shutting off gas supply to the exhaust vent line are installed downstream of the MFC. A main control unit determines that the MFC is abnormal if a transition time exceeds a previously set time when the MFC transitions from a closed state to an opened state while the shut-off valves are in a closed state.

Substrate processing apparatus and substrate processing method

Semiconductor manufacturing equipment

An object of the present invention is to improve substrate processing efficiency. A substrate processing apparatus has a reaction tube that processes a substrate inside, and a heating apparatus disposed so as to surround an external periphery of the reaction tube, so that at least a gas inlet tube is disposed on a side surface in an area in which the substrate is processed inside the reaction tube, and the heating apparatus has a heat insulator that surrounds the reaction tube, an inlet opening formed in the shape of a groove in the heat insulator from the lower end of the heating apparatus so as to avoid the gas inlet tube, and a heating element disposed between the heat insulator and the reaction tube.

Substrate processing apparatus having gas side flow via gas inlet

Growing community of inventors

Toyama, Japan

Tomoyuki Yamada