Sony Corporation

Tomoyuki Umeda

Keiji Mabuchi

Takashi Abe

Nobuo Nakamura

Hiroki Sato

Eiichi Funatsu

Hiroaki Fujita

Ken Nakajima

Takamasa Wada

Katsuaki Hirota

Nobuyuki Satou

A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell includes two pixels. Upper and lower photoelectric converters and, transfer transistors and connected to the upper and lower photoelectric converters, respectively, a reset transistor, and an amplifying transistor form the two pixels. A full-face signal line is connected to the respective drains of the reset transistor and the amplifying transistor. Controlling the full-face signal line, along with transfer signal lines and a reset signal line, to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.

Solid-state imaging device

Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

Solid state image pickup device and method of producing solid state image pickup device

Solid-state imaging device having voltage lines including openings corresponding to pixel units

Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an acitve region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

Solid-state imaging device with a plurality of photoelectric converters

A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell () includes two pixels () and (). Upper and lower photoelectric converters () and (), transfer transistors () and () connected to the upper and lower photoelectric converters, respectively, a reset transistor (), and an amplifying transistor () form the two pixels () and (). A full-face signal lineis connected to the respective drains of the reset transistor () and the amplifying transistor (). Controlling the full-face signal line (), along with transfer signal lines () and () and a reset signal line (), to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.

Solid state imaging device

Solid state imaging device having a plurality of unit cells

Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

Growing community of inventors

Kanagawa, Japan

Tomoyuki Umeda