Hitachi, Ltd.

Tomoyuki Tamura

Toshio Masuda

Kazue Takahashi

Makoto Nawata

Ryoji Fukuyama

Mamoru Yakushiji

In a plasma processing apparatus that has a vacuum chamber, a process gas supply means of supply gas to a processing chamber, an electrode to hold a sample inside said vacuum chamber, a plasma generator installed in said vacuum chamber opposite to said sample, and a vacuum exhaust system to decrease pressure of said vacuum chamber, a bias voltage of Vdc&equals;&minus;300 to &minus;50 V is applied and the surface temperature of said plate ranges from 100 to 200&deg; C. In addition, the surface temperature fluctuation of the silicon-made plate in said plasma processing apparatus is kept within &plusmn;25&deg; C.

Plasma processing apparatus and plasma processing method

A plasma etching system using a ground electrode made of silicon carbide and a cover made of a dielectric material not containing aluminum, where the cover is laid over the substrate electrode, thereby preventing aluminum from being produced out of these parts and reducing device damage. Namely, a plasma etching system has a substrate electrode mounted in a vacuum process chamber, a ground electrode and a plasma generating source, and uses plasma to provide etching of substrates mounted on said substrate electrode. The plasma etching system is characterized in that the ground electrode is made of carbon or silicon carbide, and the dielectric material containing a Si compound covers the surface portion of the substrate electrode facing inside the substrate installation portion of the vacuum process chamber, except for the substrate installation portion.

Growing community of inventors

Kudamatsu, Japan

Tomoyuki Tamura