Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Tomoyuki Takeishi

Shinichi Ito

Hirokazu Kato

Kei Hayasaki

Riichiro Takahashi

Kenji Kawano

Eishi Shiobara

Daisuke Kawamura

Hiroshi Ikegami

Yuji Kobayashi

Yasunobu Onishi

Kentaro Matsunaga

Tatsuhiko Higashiki

Kenji Chiba

Tatsuhiko Ema

Takehiro Kondoh

According to one embodiment, provided is a coating apparatus. The coating apparatus includes a first discharger, a second discharger, and a third discharger. The first discharger discharges a first liquid on a top surface of a substrate. In addition, the second discharger discharges a second liquid of which surface tension is higher than surface tension of the first liquid on the top surface of the substrate. In addition, the third discharger is disposed in a side outer than the first discharger in the substrate and discharges a gas on the top surface of the substrate.

Coating apparatus and coating method

A pattern forming method includes forming a spin on dielectric film on a substrate, washing the spin on dielectric film by using a washing liquid, drying a surface of the spin on dielectric film after the washing, forming a photosensitive film on the dried coating type insulation film, emitting energy rays to a predetermined position of the photosensitive film in order to form a latent image on the photosensitive film, developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image, and processing the spin on dielectric film with the photosensitive film pattern serving as a mask.

Pattern forming method and manufacturing method of semiconductor device

According to one embodiment, a developing apparatus and method comprises moving a first nozzle from a scan start position to a scan end position, with holding a second nozzle for supplying a rinse solution to be adjacent to the scan start position for the first nozzle, while supplying a developing solution from the first nozzle onto a wafer being rotated; and supplying the rinse solution from the second nozzle onto the wafer being rotated.

Developing apparatus and developing method

A method of substrate edge treatment includes forming a processing target film on a treatment target substrate, applying an energy line to a predetermined position on the processing target film to form a latent image on the processing target film, heating the treatment target substrate in which the latent image is formed on the processing target film, developing the processing target film after the heating, inspecting whether a residue is present at an edge of the treatment target substrate after the developing, and cleaning an end of the treatment target substrate to remove the residue at the edge of the treatment target substrate determined to be defective in the inspecting.

Substrate edge treatment for coater/developer

This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.

Semiconductor device manufacturing method to form resist pattern

A substrate processing method including while a liquid is supplied between a processing target substrate to be applied with exposure treatment and a projection optical system of an exposure apparatus for carrying out the exposure treatment, prior to providing a resist film on a first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment, selectively applying at least hydrophobic treatment with respect to a region in a predetermined range from a peripheral rim part of a second main face opposite to the first main face.

Substrate processing method, substrate processing apparatus, and manufacturing method of semiconductor device

A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.

Processing method, manufacturing method of semiconductor device, and processing apparatus

A film forming method comprising forming a liquid coating film on a substrate by supplying a liquid containing a coating type thin film forming substance and a solvent onto the substrate, substantially converging a variation in film thickness of the coating film, making the coating film stand by in an atmosphere including moisture under a predetermined condition after the substantial-convergence, the predetermined condition being such that a product of a time for which the coating film is exposed to the atmosphere and a water content per unit volume in an atmosphere in the vicinity of a surface of the coating film is made to be greater than or equal to a predetermined value, and forming a solid thin film on the substrate after the stand-by, the thin film being formed by carrying out an elimination of the solvent in the coating film and heat treatment for generating an irreversible reaction to the coating type thin film forming substance in the coating film.

Film forming method, and substrate-processing apparatus

A pattern forming method comprises forming a first resist pattern on a substrate, irradiating light on the first resist pattern, forming a resist film including a cross-linking material on the substrate and the first resist pattern, forming a second resist pattern including a cross-linking layer formed at an interface between the first resist pattern and the resist film by causing a cross-linking reaction at the interface, and irradiating light on the first resist pattern including setting an amount of the light irradiated on the first resist pattern such that a dimension of the second resist pattern is to be a predetermined dimension based on a previously prepared relationship between a difference between a dimension relating to the first resist pattern and a dimension relating to the second resist pattern and the amount of the light irradiated on the first resist pattern.

Pattern forming method and method for manufacturing a semiconductor device

A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.

Alkaline solution and manufacturing method, and alkaline solution applied to pattern forming method, resist film removing method, solution application method, substrate treatment method, solution supply method, and semiconductor device manufacturing method

A pattern forming method comprises forming a photosensitive resin film on a substrate, exposing the photosensitive resin film, forming a pattern of the photosensitive resin film by supplying a developing solution to the photosensitive resin film, and slimming to remove a surface layer of the pattern by causing the pattern to contact with an activated water.

Growing community of inventors

Kawasaki, Japan

Tomoyuki Takeishi