Tdk Corporation

Kabushiki Kaisha Toshiba

Fujimori Kogyo Co., Ltd.

Akita Prefecture

Tomoyuki Sasaki

Yohei Shiokawa

Tatsuo Shibata

Tohru Oikawa

Katsuyuki Nakada

Zhenyao Tang

Yoshitomo Tanaka

Atsushi Tsumita

Shinto Ichikawa

Keita Suda

Eiji Komura

Jiro Yoshinari

Kiyoshi Noguchi

Yugo Ishitani

Kazuumi Inubushi

Katsumichi Tagami

Minoru Ota

Shogo Yamada

Minoru Sanuki

Tsuyoshi Suzuki

Hayato Koike

Takuya Ashida

Shogo Yonemura

Tomomi Kawano

Hirokazu Takahashi

Hiroshi Ikeda

Akifumi Kamijima

Shinya Ito

Yoshiaki Sato

Isamu Sato

Norihisa Ando

Shinichi Yamaguchi

Shinya Onodera

Noboru Yamanaka

Akihiro Masuda

Hitoshi Hatate

Takuya Adachi

Hideyuki Yatsu

Yukio Terasaki

Tetsuhito Shinohara

Masao Segawa

Toshio Suzuki

Jun Karasawa

Yasuharu Takada

Michiko Ooishi

Koki Takanashi

Kosuke Hamanaka

Tomoko Kitamura

Masaki Kubota

Jun Asaga

Toshiki Gushi

Takeshi Seki

A magnetic domain wall motion element includes a first ferromagnetic layer, in-plane wiring, and first, second and third via wirings. A position of the in-plane wiring in a stacking direction is different from that of the first ferromagnetic layer. The first via wiring connects the first ferromagnetic layer and in-plane wiring. The second via wiring is connected to the in-plane wiring at a different position from the first. The third via wiring is connected to the in-plane wiring at a different position from the first and second. When positions of the second and the third via wirings are projected on an axis passing through a center of the first via wiring when viewed in the stacking direction and extending in a second direction, the first via wiring is interposed between projection points of the second and third via wirings to the axis in the second direction.

Magnetic domain wall motion element and magnetic array

A variable capacitor includes: a first conductive layer; a second conductive layer; and a capacitance layer sandwiched between the first conductive layer and the second conductive layer. Each of the first conductive layer and the second conductive layer is a ferromagnetic layer containing a ferromagnetic material. The first conductive layer has a first magnetic domain and a second magnetic domain having magnetization oriented in a direction different from the first magnetic domain. In the variable capacitor, a domain wall which is a boundary between the first magnetic domain and the second magnetic domain is configured to be movable within at least an area of the first conductive layer overlapping the capacitance layer in a laminating direction in a first direction within a plane of the first conductive layer.

Variable capacitor and integrated circuit

A spin current magnetization rotational element according to the present disclosure includes a first ferromagnetic metal layer configured for a direction of magnetization to be changed and a spin-orbit torque wiring extending in a direction intersecting a lamination direction of the first ferromagnetic metal layer and bonded to the first ferromagnetic metal layer. The spin-orbit torque wiring includes a narrow portion, and at least a part of the narrow portion constitutes a junction to the first ferromagnetic metal layer.

Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory

A magnetic film includes a ferromagnetic layer. The ferromagnetic layer has a thickness or a width in a first direction which is longer than a thickness or a width in another direction, a crystalline structure is a tetragonal structure, and a main vector direction of a c axis of the tetragonal structure is the first direction.

Magnetic film, magnetoresistive effect element, and method for manufacturing magnetic film

This spin current magnetization rotational element includes a first ferromagnetic metal layer for a magnetization direction to be changed, and a spin-orbit torque wiring extending in a second direction intersecting a first direction which is an orthogonal direction to a surface of the first ferromagnetic metal layer and configured to be joined to the first ferromagnetic metal layer, wherein the spin-orbit torque wiring has a structure in which a spin conduction layer joined to the first ferromagnetic metal layer and a spin generation layer joined to the spin conduction layer on a surface on a side opposite to the first ferromagnetic metal layer are laminated.

Spin-current magnetization reversal element, magnetoresistance effect element, and magnetic memory

A spin current magnetization reversal element includes: a first ferromagnetic metal layer with a changeable magnetization direction, and a spin-orbit torque wiring, wherein a first direction is defined as a direction perpendicular to a surface of the first ferromagnetic metal layer, the wiring extends in a second direction intersecting the first and is bonded to a first surface of the first ferromagnetic metal layer, wherein the wiring includes a pure spin current generator which is bonded to the metal layer, and a low-resistance portion which is connected to both ends of the generator in the second direction and is formed of a material having a smaller electrical resistivity than the generator, and the generator is formed so that an area of a cross-section orthogonal to the first direction continuously and/or stepwisely increases as it recedes from a bonding surface bonded to the first ferromagnetic metal layer in the first direction.

Spin current magnetization reversal element, magnetoresistance effect element, and magnetic memory

A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer. The tunnel barrier layer is a stacked body including one or more first oxide layers having a spinel structure and one or more second oxide layers having a spinel structure with a composition which is different from a composition of the first oxide layer.

Magnetoresistance effect element

An irreversible circuit element includes: a housing; a plurality of irreversible circuit plates accommodated in the housing; and a plurality of terminals connected to an outer surface of the housing, the plurality of irreversible circuit plates are arranged such that the adjacent irreversible circuit plates face each other, each of the plurality of irreversible circuit plates includes a metal layer, a first insulating layer, a loss layer, and a first magnetic field applying layer laminated in sequence in a thickness direction, each of the plurality of irreversible circuit plates transmits a signal irreversibly between a first end and a second end, and the first end and the second end of each of the plurality of irreversible circuit plates are connected to different terminals of the plurality of terminals.

Irreversible circuit element and method of manufacturing irreversible circuit element

This magnetic array includes a substrate, a first unit, a second unit, a word line, a first read line, a second read line, a first gate line, a second gate line, and a source line. Each of the units includes a magnetoresistance effect element, a first switching element, and a second switching element. The magnetoresistance effect element includes a laminate and a wiring provided on the laminate. The first switching element is connected to a reference layer of the laminate. The second switching element is connected to the wiring. Each of the read lines is connected to the first switching element. The word line is connected to the second switching element. The gate lines are respectively connected to the first switching element and the second switching element of different units. The source line is connected to the wiring.

Magnetic array and method for manufacturing magnetic array

A magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer which is located in a first direction with respect to the spin-orbit torque wiring and in which spins are injected from the spin-orbit torque wiring. The spin-orbit torque wiring has a plurality of spin generation layers and insertion layers located between the plurality of spin generation layers in the first direction. The insertion layers have a lower electrical resistivity than the spin generation layers.

Magnetization rotational element, magnetoresistance effect element, semiconductor element, magnetic recording array, and method for manufacturing magnetoresistance effect element

In the magnetoresistance effect element according to one aspect, the metal oxide constituting the metal oxide layer has the ratio of oxygen higher than the total ratio of metal when the composition is expressed in the stoichiometric composition; and the resistivity of the metal oxide layer is higher than that of the tunnel barrier layer.

A method for producing a spin current magnetization rotational element includes a stacking step of stacking, on one surface of a substrate, a magnetoresistance effect element having a first ferromagnetic metal layer having a fixed magnetization direction, a second ferromagnetic metal layer having a variable magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a first direction, wherein an inclined surface non-parallel to the first direction is formed on at least a part of a surface of the spin-orbit torque wiring.

Spin current magnetization reversal element, element assembly, and method for producing spin current magnetization reversal element

A spin-orbit torque type magnetoresistance effect element including a magnetoresistance effect element having a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer; and spin-orbit torque wiring that extends in a first direction intersecting with a stacking direction of the magnetoresistance effect element and that is joined to the second ferromagnetic metal layer; wherein the magnetization of the second ferromagnetic metal layer is oriented in the stacking direction of the magnetoresistance effect element; and the second ferromagnetic metal layer has shape anisotropy, such that a length along the first direction is greater than a length along a second direction orthogonal to the first direction and to the stacking direction.

Spin-orbit torque type magnetoresistance effect element, and method for producing spin-orbit torque type magnetoresistance effect element

A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a chemical formula of ABO, and has a spinel structure in which cations are arranged in a disordered manner, A represents a divalent cation that is either Mg or Zn, and B represents a trivalent cation that includes a plurality of elements selected from the group consisting of Al, Ga, and In.

A magnetic device includes a stacked body including a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer; a first insulating layer which covers side surfaces of the stacked body; and a radiator located outside the first insulating layer with respect to the stacked body, in which a distance between the stacked body and the radiator differs depending on a position of the stacked body in a stacking direction.

Magnetic device

Growing community of inventors

Tokyo, Japan

Tomoyuki Sasaki