Kabushiki Kaisha Toshiba

Toshiba Materials Co., Ltd.

Tomoyuki Oozeki

Seiichi Suenaga

Hiroyasu Kondo

Fumihiko Yoshimura

Shota Yamamoto

A bonded assembly according to the present embodiment, includes a metal plate and a ceramic substrate bonded to each other through a bonding layer containing Ag. In the bonded assembly, in a measurement region that is formed in a cross section formed by a thickness direction of the bonding layer and an orthogonal direction thereto, and that has a size of a length in the thickness direction of the bonding layer×a length of 200 μm in the orthogonal direction, a Ag-rich region having a Ag concentration of 60 at % or more has an area ratio of 70% or less to a Ag-poor region having a Ag concentration of 50 at % or less.

Bonded assembly, and ceramic circuit substrate and semiconductor device using the same

The present invention provides a ceramic circuit board comprising: a ceramic substrate; and at least one of a recess and a through-hole formed in the ceramic substrate, wherein a conductive portion filled with a conductor is provided in the recess or the through-hole, the surface roughness Ra is 1.0 &#x3bc;m or less, and the maximum height Rz is 100 &#x3bc;m or less. It is preferable that the maximum height Rz is 10 &#x3bc;m or less. Further, it is preferable that the surface roughness Ra is 0.5 &#x3bc;m or less. According to the above-described configuration, it is possible to provide a ceramic circuit board having an excellent positionability of the conductive portion for mounting a semiconductor element.

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Kanagawa, Japan

Tomoyuki Oozeki