Samsung Electronics Co., Ltd.

Fujitsu Semiconductor Limited

Iwate University

Tomoyuki Kikuchi

Yukika Yamada

Yoshiyuki Oishi

Ryosuke Kamitani

Eun Joo Jang

Tae Ho Kim

Hyun A Kang

Oul Cho

Nayoun Won

Ha Il Kwon

Masashi Tsuji

Eigo Miyazaki

Hyo Sook Jang

Kouichi Nagai

Yuho Won

Jeong Hee Lee

Dae Young Chung

Takahiro Fujiyama

Jun-Mo Yoo

Fumiaki Kato

Norihito Ishii

Hideaki Kikuchi

Hiroko Endo

Naotoshi Suganuma

Keigo Furuta

Hiroshi Miyao

Haeng Deog Koh

Eunjoo Jang

Soonmin Cha

Takao Motoyama

A quantum dot ink composition including a plurality of quantum dots, and a mixed solvent including a Solvent a and a Solvent b, the ink composition having a surface tension of about 30 mN/m to about 40 mN/m, where Solvent a is a cycloalkane compound with at least one ring carbon having a linear C4 to C16 alkyl group, and Solvent b is an aromatic hydrocarbon compound having a linear C2 to C12 alkyl group. A quantum dot electroluminescent device including a light emitting layer formed from the quantum dot composition.

Quantum dot ink composition, and quantum dot electroluminescent device

Disclosed is a copolymer including a structural unit represented by Chemical Formula 1 capable of improving performance (particularly durability) of an electroluminescent device.

Copolymer, electroluminescent device material including copolymer, and electroluminescent device

A triazine ring-containing polymer including a structural unit represented by General Formula 1:*-[--]-*  General Formula 1

Triazine ring-containing polymer, and thermoplastic article and optical part including same

Disclosed are a triazine ring-containing polymer having a repeating unit that comprises a structural unit derived from a triazinedithiol compound, the triazine ring-containing polymer having a yellowness index of less than 3 and comprising terminal SH groups, wherein at least a portion of the SH groups are capped with a hydrocarbon group, and a number of the SH groups in the triazine ring-containing polymer is less than about 1&#xd7;10per gram of the polymer, and a thermoplastic article and optical part including the polymer.

An organic-inorganic hybrid composition including a polymer having a triazine ring structure in a main chain of the polymer (A); an inorganic particulate (B); and a surface-treating agent having a triazine ring structure represented by Formula (1)(C): 

Organic-inorganic hybrid composition, and article and optical component including the same

A triazine ring-containing polymer including a repeating unit represented by Formula (1) and having a number average molecular weight of greater than about 20000 g/mol and less than or equal to about 50000 g/mol: 

Triazine ring-containing polymer, and thermoplastic article and optical component including the same

Disclosed an organic-inorganic hybrid composition including a polymer (A) including a triazine ring structure represented by General Formula (1) in a polymer main chain structure; 

A layered structure having a first layer including a polymerization product of a monomer combination including a first monomer having at least two thiol groups at its terminal end and a second monomer having at least two carbon-carbon unsaturated bond-containing groups at its terminal end, wherein the first monomer includes a first thiol compound represented by Chemical Formula 1-1 including a thioglycolate moiety and a second thiol represented by Chemical Formula 1-2, and wherein the second monomer includes an ene compound represented by Chemical Formula 2: 

Layered structures and quantum dot sheets and electronic devices including the same

A barrier coating composition including: a monomer combination including a first monomer having at least two thiol groups at its terminal end and a second monomer having at least two carbon-carbon unsaturated bond-containing groups at its terminal end; and a plurality of organo-modified clay particles dispersed in the monomer combination, wherein the organo-modified clay particles include a compound having a hydrocarbyl group linked to a heteroatom, and wherein the compound is a primary, secondary, or tertiary amine, a quaternary organoammonium salt, a primary, secondary, or tertiary phosphine, a quaternary organophosphonium salt, a thiol including an amine group, or a combination thereof.

Barrier coating compositions, composites prepared therefrom, and quantum dot polymer composite articles including the same

A method for manufacturing a semiconductor device including, forming a first insulating film above a silicon substrate, forming an impurity layer in the first insulating film by ion-implanting impurities into a predetermined depth of the first insulating film, and modifying the impurity layer to a barrier insulating film by annealing the first insulating film after the impurity layer is formed, is provided.

Semiconductor device and method for manufacturing the same

Growing community of inventors

Yokohama, Japan

Tomoyuki Kikuchi