Mochida Pharmaceutical Co., Ltd.

Elpida Memory, Inc.

Tomoyuki Kamino

Tsutomu Satoh

Yasushige Akada

Yoshitaka Maeda

Daido Hotta

Hideharu Uchida

Naoto Kosuga

Ken-ichi Amano

Toru Ishikawa

Hiroshi Ichikawa

Fumihiko Saitoh

Motoi Nakahara

Ken-Ichi Amano

The present invention provides a compound represented by Formula (I) or a pharmaceutically acceptable salt thereof or a solvate of these. A compound having Nrf2 activation ability is provided by the present invention. 

Indazolyl-oxo-isothiazole compounds

A compound represented by formula (I'): (wherein m, n, and p each represent 0 to 2; q represents 0 or 1; Rrepresents halogen, a hydrocarbon group, a heterocyclic group, an alkoxy group, an alkoxycarbonyl group, a sulfamoyl group, a CN group, an NOgroup, or the like; Rrepresents halogen, amino, a hydrocarbon group, an aromatic heterocyclic group, or an oxo group; Xrepresents O, &#x2014;NR&#x2014;, or &#x2014;S(O)r-; Xrepresents a methylene group, O, &#x2014;NR&#x2014;, or &#x2014;S(O)r-; Q&#x2032; represents a heteroaryl group, a heteroarylalkyl group, a substituted aryl group, or an aralkyl group; Cycle moiety represents an aryl ring or a heteroaryl ring; and the wavy line represents an E-isomer or a Z-isomer), a salt of the compound, or a solvate of the compound or the salt. A pharmaceutical composition and a transient receptor potential type I (TRPV1) receptor antagonist each contain, as an active ingredient, at least one of the compound, a salt of the compound, and a solvate of the compound or the salt.

Heterocyclidene acetamide derivative

A semiconductor storage device includes a memory array compartmentalized into first and second regions alternately arranged. The second regions are formed by odd and even columns alternately arranged. The semiconductor storage device includes: a memory mat array arranged in each first region; a sense amp array arranged in each second region; local IO lines arranged in each second region and connected to the sense amp array; main IO lines crossing the first and second regions; and a read/write amplifier arranged in each second region and at an intersection region where the local IO lines cross the main IO lines. The read/write amplifier in an odd column is connected to a local IO line therein and to a local IO line in the next odd column. The read/write amplifier in an even column is connected to a local IO line therein and to a local IO line in the next even column.

Semiconductor storage device

Growing community of inventors

Tokyo, Japan

Tomoyuki Kamino