Japan Display Inc.

Kabushiki Kaisha Toshiba

Nec Electronics Corporation

Sony Group Corporation

Tomoyuki Ito

Yoshinori Tanaka

Takashi Abe

Takeo Tsukamoto

Akihiro Hanada

Ryo Onodera

Isao Suzumura

Takuo Kaitoh

Hajime Watakabe

Toshihide Jinnai

Mitsuaki Shimamura

Motohiko Kimura

Takashi Nakamura

Masahiro Tada

Shigesumi Araki

Makoto Uchida

Takanori Tsunashima

Kazuhide Mochizuki

Kazuki Matsunaga

Jin Hirosawa

Toshiki Kaneko

Takashi Okada

Makoto Kondo

Yasuaki Tsuchiya

Makoto Ochiai

Shuichi Konami

Takuya Uehara

Katsuhiko Sato

Yasuhiro Yuguchi

Masaki Yoda

Naruhiko Mukai

Yoshifumi Sato

Masataka Tamura

Yuji Sano

Yutaka Togasawa

Koichi Soma

Toshiji Taiji

Kenichi Aoyagi

Shin Sakurai

Wataru Kono

Katsunori Shiihara

Hiroaki Igakura

Toru Taguchi

Yasumi Kitajima

Yoshimi Tanaka

Tomoharu Tanabe

A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

Semiconductor device

A display device includes a first nitride insulating film arranged on a first substrate, a gate electrode arranged along a first direction on the first nitride insulating film, a second nitride insulating film arranged on the gate electrode, a first oxide insulating film arranged on the second nitride insulating film, and an oxide semiconductor layer arranged on the first oxide insulating film, wherein the gate electrode has a first titanium layer, an aluminum layer, and a second titanium layer stacked in order from the first nitride insulating film side, and a thickness of the second titanium layer is greater than a thickness of the first titanium layer.

Display device

A display device includes a wiring region including a gate wiring, a source wiring intersecting the gate wiring, and a first insulating layer between the gate wiring and the source wiring and an opening region including a pixel electrode on the first insulating layer and adjacent to the wiring region. The first insulating layer includes a first oxide insulating layer and a first nitride insulating layer, the first oxide insulating layer is disposed over the wiring region and the opening region, the first nitride insulating layer is disposed in the wiring region and includes a first opening overlapping the opening region, and the pixel electrode overlaps the first opening.

According to one embodiment, a method for manufacturing a semiconductor device, includes forming a first insulating film which covers a gate electrode, forming an island-shaped oxide semiconductor in contact with the first insulating film, forming a second insulating film which covers the oxide semiconductor, forming a source electrode in contact with the oxide semiconductor, forming a drain electrode in contact with the oxide semiconductor, forming a third insulating film which covers the source electrode and the drain electrode and forming a channel region between the source electrode and the drain electrode by supplying oxygen from the third insulating film to the oxide semiconductor via the second insulating film.

Semiconductor device manufacturing method

According to one embodiment, a detection device comprises a base, a sensor layer, a collimator, a plurality of lenses, and a spacer. The sensor layer is placed on the base and includes a plurality of sensors which output detection signals corresponding to incident light. The collimator layer is placed on the sensor layer and includes a collimator having a plurality of openings which overlap the sensors, respectively. The plurality of lenses are placed on the collimator layer and overlap the openings, respectively. The spacer protrudes more than the lenses in a stacking direction of the base, the sensor layer and the collimator layer.

Detection device and display device

Semiconductor device and method of manufacturing semiconductor device

A photodiode array is provided and includes insulating substrate; photodiodes arrayed in detection region of insulating substrate, photodiodes configured to output signal in accordance with light incident on photodiodes; first switching elements corresponding to photodiodes and including first semiconductor made of oxide semiconductor; gate lines coupled with first switching elements and extending in first direction; signal lines coupled with first switching elements and extending in second direction intersecting first direction; and gate line drive circuit including second switching element that includes second semiconductor made of polycrystalline silicone, gate line drive circuit being provided in peripheral region outside detection region and configured to drive gate lines, wherein photodiodes includes translucent conductive layer that is cathode, and translucent conductive layer overlaps none of signal lines in plan view.

Photodiode array

According to one embodiment, a display device comprises a collimating layer including first to third openings, first to third color filters overlaid on the first to third openings, respectively, a first sensor outputting a first detection signal corresponding to light made incident through the first opening and the first color filter, a second sensor outputting a second detection signal corresponding to light made incident through the second opening and the second color filter, and a third sensor outputting a third detection signal corresponding to light made incident through the third opening and the third color filter.

According to one embodiment, a liquid crystal display device comprises first and second substrates and a liquid crystal layer. The first substrate includes a base member, a sensor between the base member and the liquid crystal layer, a collimation layer between the sensor and the liquid crystal layer, an insulating layer between the sensor and the collimation layer, an insulating layer, and a light shielding layer between the sensor and the base member. The sensor is configured to output a signal corresponding to light incident from a liquid crystal layer side. The light shielding layer overlaps with an outer peripheral part of the first collimation layer.

Liquid crystal display device

A fingerprint detection apparatus comprising: an insulating substrate; a plurality of photoelectric conversion elements arrayed in a detection region of the insulating substrate, each of the photoelectric conversion elements configured to output a signal in accordance with light incident on each of the photoelectric conversion elements; first switching element, each corresponding to each of the photoelectric conversion elements and including a first semiconductor made of oxide semiconductor; a plurality of gate lines coupled with the first switching elements and extending in a first direction; a plurality of signal lines coupled with the first switching elements and extending in a second direction intersecting the first direction; and a gate line drive circuit including a second switching element that includes a second semiconductor made of polycrystalline silicone, the gate line drive circuit being provided in a peripheral region outside the detection region and configured to drive the gate lines.

Fingerprint detection apparatus and display apparatus

An operation method and apparatus in a pressure vessel of a nuclear reactor is provided. The operation apparatus including a body and a guide inserted from the upper side of the nuclear reactor to an interior of the jet pump. The operation apparatus circulate water inside the pressure vessel. The guide is positioned at the end of a body of the operation apparatus, and is inclined with respect to the center axis of the body so as to be inserted into a side opening of the jet pump.

Method and apparatus for executing an operation in a pressure vessel of a nuclear reactor

A working apparatus has: a working equipment for doing works on a structure; an operation mechanism adapted to actively move the working equipment relative to the structure; and an adhering/traveling module coupled to the operation mechanism and adapted to adhere to the structure so as to have the weight of the working apparatus borne by the structure and travel/move on the structure for positioning. With this arrangement, the working apparatus can perform accurate positioning operations in a narrow environment and complex scanning operations by means of various pieces of the working equipment such as inspection sensors, and can secure a large working area within a short period of time and reduce the overall working hours.

Apparatus and method for mounting and moving a working apparatus on a structure for the performance of works on the structure

The present invention relates to a slurry for chemical mechanical polishing, which contains a silica polishing material, an oxidizing agent, a benzotriazole-based compound, a diketone and water.

Slurry for chemical mechanical polishing

A laser emitting head for irradiating a portion to be machined with laser beams outputted from a laser unit () incorporates an emitting head body having a light guide member () in the head for guiding the laser beams; a light converging lens () for converging the laser beams transmitted from the light guide member in the head; a reflecting mirror () for irradiating the portion to be machined with the converged laser beams; mirror rotating means () for holding the reflecting mirror to be rotative around the optical axis of the laser beam; distance-adjustment means () for adjusting the relative distance between the reflecting mirror and the converging lens; and moving means () for moving the reflecting mirror and the converging lens such that the relative distance is maintained so that the light guide member in the head. The converging lens and the reflecting mirror can be introduced/discharged with respect to a portion to be machined and formed in a narrow gap in an incore structure. As a result, a preventive-maintenance/repair operation using laser beams and arranged to be performed in a narrow gap in the incore structure can safely and efficiently be performed.

Laser emission head, laser beam transmission device, laser beam transmission device adjustment method and preventive maintenance/repair device of structure in nuclear reactor

Growing community of inventors

Tokyo, Japan

Tomoyuki Ito