Renesas Electronics Corporation

Nec Corporation

Murata Manufacturing Co., Ltd.

Renesas Technology Corp.

Fujikin Inc.

Tomoyuki Ishikawa

Yasushi Shigeno

Akishige Nakajima

Takashi Ogawa

Shinya Osakabe

Hitoshi Akamine

Takahiro Matsuda

Tsutomu Kobori

Masahiko Ochiishi

Izumi Arai

Kazuto Tajima

Jyun Funaki

Shinnichirou Takatani

A fluid controller heating apparatus includes a cylindrical heater unit that surrounds a portion of an opening-and-closing valve to be heated, and a heat insulation jacket that surrounds the heater unit. The heater unit includes a pair of heat-transfer members to which plate-shaped heaters are fixed, respectively. The heat-transfer members are mounted so as to hold the opening-and-closing valve therebetween from both sides and are capable of being coupled to each other with a screw member. The heat insulation jacket is a cylindrical integrated product.

Fluid controller heating apparatus and fluid control apparatus

The present invention provides a semiconductor integrated circuit device and a radio frequency module realizing reduction in high-order harmonic distortion or IMD. For example, a so-called antenna switch having a plurality of transistors between an antenna terminal and a plurality of signal terminals is provided with a voltage supply circuit. The voltage supply circuit is a circuit for supplying voltage from a voltage supply terminal to at least two signal terminals in the plurality of signal terminals via resistive elements. With the configuration, antenna voltage dropped due to a leakage or the like can be boosted and, for example, transistors in an off state can be set to a deep off state.

Semiconductor integrated circuit device and radio frequency module

A server system comprises a plurality of servers, and a management unit. Each of the servers has virtual machines which can move among the servers. The management unit moves all the virtual machines on one server to another server(s) based on information showing an electric power value so as to reduce the number of servers in operation as much as possible. The management unit stops supplying the electric power to the server on which no virtual machine has run as a result of the movement of the virtual machines.

Server system, reducing method of power consumption of server system, and a computer readable medium thereof

There is provided a technique for reducing the occurrence of higher harmonics which occur from a field effect transistor, particularly a field effect transistor configuring a switching element of an antenna switch. In a transistor having a meander structure, the gate width of a partial transistor closest to a gate input side is increased. More specifically, a comb-like electrode is made longer than the other comb-like electrodes. In other words, a finger length is made greater than any other finger length. In particular, the comb-like electrode has the greatest length in all the comb-like electrodes.

Semiconductor device

Upon application of an on-state voltage to a control terminal, an antenna switch provided between an antenna terminal and a transmission terminal is turned on, and a transmission signal of a PCS/DCS system passes from the transmission terminal through the antenna terminal. At this time, a booster circuit, to which a part of the transmission signal is supplied, generates at an output terminal a boost voltage higher than a control voltage output from a controller due to the rectification of diodes, and applies the same to the gate of a transistor circuit of the antenna switch. Since in the booster circuit a resistor is coupled to the output terminal, the passage through resistors of an input transmission power in an RF signal path is only the passage through one resistor, thus reducing the attenuation of the transmission signal and providing an excellent insertion loss characteristic.

Semiconductor integrated circuit device and high-frequency power amplifier module

In a SPDT switch, a resistor for leak path is connected between a terminal for antenna and a reference potential. The resistor for leak path allows charge capacitances accumulated in electrostatic capacitor elements provided as DC cut capacitors connected to transmission signal terminals and reception signal terminals to be discharged and allows rapid lowering of a potential at the terminal for antenna. In the SPDT switch, a switching characteristic is improved and a delay in the rising edge of a low-power slot which comes after a high-power slot is reduced.

Semiconductor integrated circuit device and high frequency power amplifier module

Growing community of inventors

Tokyo, Japan

Tomoyuki Ishikawa