Globalwafers Japan Co., Ltd.

Tomoyuki Ishihara

Nobue Araki

Takeshi Onozuka

A method of evaluating metal contamination by measuring the amount of metal contaminants to a silicon wafer in a rapid thermal processing apparatus includes steps of obtaining a Si single crystal grown by the Czochralski method at a pulling rate of 1.0 mm/min or lower, the crystal having oxygen concentration of 1.3&#xd7;10atoms/cmor less, slicing silicon wafers from the Si single crystal except regions of 40 mm toward the central portion from the head of the single crystal and 40 mm toward the central portion from the tail, heat-treating the silicon wafer with a rapid thermal processing apparatus and transferring contaminants from members in a furnace of the rapid thermal processing apparatus to the silicon wafer, and measuring a lifetime of the silicon wafer to which contaminants are transferred.

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Niigata, Japan

Tomoyuki Ishihara