Nuflare Technology, Inc.

Tomoyuki Horiuchi

Takeshi Kurohori

Yusuke Sakai

Noriaki Nakayamada

Kiyoshi Hattori

Junichi Suzuki

Hayato Kimura

Shuichiro Fukutome

Takuya Matsukawa

Tateki Watanabe

Atsushi Hayamizu

The height of selected points on the surface of a mask is measured, and if the number of measurement errors in this measurement is less than a predetermined value, an approximated curved surface for the mask surface is generated. The measurement data and height data obtained from the approximated curved surface are then compared, and if there is no point at which the difference between the measurement data and the data obtained from the approximated curved surface is greater than a predetermined threshold value, then it is determined that the reliability of the approximated curved surface is high and the height of the mask surface is corrected in accordance with this approximated curved surface.

Charged particle beam writing method and charged particle beam writing apparatus

A writing data processing control apparatus includes an assignment part configured to assign processing of a plurality of pieces of writing data of predetermined divided writing regions, stored in a storage device, one by one to one of a plurality of processing apparatuses in which processing is performed in parallel, and a separation part configured, when a processing error occurred as a result of processing of writing data read from the storage device by a first processing apparatus assigned, to separate the first processing apparatus in which the processing error occurred from assigning targets of subsequent writing data processing, wherein the assignment part reassigns the processing of the writing data in which the processing error occurred to a second processing apparatus being different from the first processing apparatus.

Writing data processing control apparatus, writing method, and writing apparatus

A charged-particle beam lithography apparatus includes a charged-particle beam irradiation unit, a deflector which deflects the charged particle beam, a stage which disposes thereon a workpiece for pattern writing and a plurality of marks being regularly laid out in an entire area substantially equal to a pattern writing region of the workpiece, a measurement unit for measuring positions of the marks on the stage through scanning of the charged-particle beam by the deflector, a coefficient calculation unit which uses an approximation equation for correction of a position deviation occurring due to a hardware configuration of the apparatus to perform the fitting of a position deviation amount of each mark by a coordinate system of the apparatus to thereby calculate more than one coefficient of the fitting-applied approximation equation, and a storage unit which performs overwrite-storing whenever the coefficient calculation unit calculates the coefficient.

Beam shot position correction coefficient computation/updating technique for ultrafine pattern fabrication using variable shaped beam lithography

A charged particle beam pattern writing apparatus includes an input part for inputting a predetermined command, a check part for checking a state of a predetermined function used for pattern writing using a charged particle beam, based on the predetermined command, and an output part for outputting the state of the predetermined function which has been checked.

Pattern writing apparatus using charged particle beam, and program-recorded readable recording medium

A charged particle beam pattern writing apparatus in accordance with one preferred form of this invention includes an atmospheric pressure measuring unit which measures the value of an atmosphere air pressure, a coordinate value corrector which corrects three-dimensional (3D) coordinate values by use of the value of the air pressure measured, a deflection amount computing unit which calculates the deflection amount of a charged particle beam by using the 3D coordinate values corrected, an irradiator for irradiation of the charged particle beam, and a deflector for deflection of the charged particle beam based on the deflection amount.

Growing community of inventors

Shizuoka, Japan

Tomoyuki Horiuchi