Tokyo Ohka Kogyo Co., Ltd.

Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Daicel Corporation

Tomoyuki Hirano

Daiju Shiono

Takahiro Dazai

Tasuku Matsumiya

Hideshi Abe

Yuki Miyanami

Kazufumi Watanabe

Yoshiaki Masuda

Yoshiki Ebiko

Tomoharu Ogita

Daichi Takaki

Masanari Yamaguchi

Takayoshi Mori

Junichi Tsuchiya

Tetsuya Uchida

Sanae Furuya

Yoshiharu Kudoh

Yoichi Ueda

Hirotoshi Nomura

Shinichi Yoshida

Toshifumi Wakano

Yoshiyuki Utsumi

Tsuyoshi Nakamura

Masatoshi Arai

Yusuke Tanaka

Kotaro Endo

Ryoji Suzuki

Hiroaki Shimizu

Yoshitaka Komuro

Shuji Manda

Hayato Iwamoto

Hiroyuki Mori

Shin Iwabuchi

Tsuyoshi Kurosawa

Shinpei Yamaguchi

Yukari Takeya

Kosuke Nakanishi

Hideyuki Honda

Masashi Ohura

Hisahiro Ansai

Keiji Tatani

Susumu Hiyama

Takehiro Seshimo

Yoshiya Hagimoto

Shunsuke Maruyama

Jun Koshiyama

Takashi Nagano

Makiko Irie

Hideto Nito

Jiro Yokoya

Keiichi Nakazawa

Toyotaka Kataoka

Sho Abe

Ryoichi Takasu

Yuta Iwasawa

Naoki Yamashita

Junli Wang

Akiya Kawaue

Masaru Takeshita

Kazunobu Ota

Yoshihiro Sawada

Fumitake Kaneko

Ryosuke Matsumoto

Atsushi Okuyama

Yoichi Hori

Hiroshi Koyama

Junpei Yamamoto

Kazuishi Tanno

Naoto Motoike

Kenri Konno

Takaaki Kaiho

Masashi Nakazawa

Masamichi Nishimura

Hiromitsu Tsuji

Kaori Tai

Rikita Tsunoda

Isamu Takagi

Kazumi Asada

Koji Furumi

Miki Shinomiya

Takehito Seo

Tomonari Sunamichi

Kazunobu Ohta

Yusuke Itagaki

Tsukasa Miura

There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.

Solid-state imaging apparatus and electronic apparatus

The present technology relates to an imaging element that can increase the degree of freedom of element arrangement. A photoelectric conversion unit, a through trench penetrating a semiconductor substrate in a depth direction and formed between pixels each including the photoelectric conversion unit, and a PN junction region in a side wall of the trench are included, and the through trench has an opening portion, and a P-type region is formed in the opening portion. A photoelectric conversion unit, a holding unit, a through trench formed between the photoelectric conversion unit and the holding unit, and a PN junction region in a side wall of the through trench are included, and the through trench has an opening portion and a readout gate for reading the charge from the photoelectric conversion unit is formed in the opening portion. The present technology can be applied to, for example, an imaging element.

Imaging element having p-type and n-type solid phase diffusion layers formed in a side wall of an interpixel light shielding wall

There is provided an imaging device including a first semiconductor layer formed on a semiconductor substrate, a second semiconductor layer formed on the first semiconductor layer and having an opposite conductivity type to the first semiconductor layer, a pixel separation portion that demarcates a pixel region including the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer from one surface side of the semiconductor substrate, and a metal layer connected to the second semiconductor layer from a light irradiation surface side which is the other surface of the semiconductor substrate and buried in the pixel separation portion in at least a part of the semiconductor substrate in a thickness direction.

Imaging device with improved short-wavelength sensitivity

The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.

Solid-state imaging element, method for manufacturing the same, and electronic apparatus

A solid-state imaging device according to an embodiment of the present disclosure includes two or more pixels. The pixels each include a photoelectric converter, a charge holding section, and a transfer transistor. The charge holding section holds electric charge transferred from the photoelectric converter. The transfer transistor transfers electric charge from the photoelectric converter to the charge holding section. The pixels each further include a light blocking section that is disposed in a layer between the photoelectric converter and the charge holding section. The light blocking section has an opening which a vertical gate runs through. The pixels each further include a charge blocking section that blocks transfer of electric charge to the transfer transistor via a region between an edge, of the opening, closer to the charge holding section and the vertical gate.

Solid-state imaging device and electronic apparatus

The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

Solid-state imaging device with uneven structures and method for manufacturing the same, and electronic apparatus

A light-receiving device includes at least one pixel. The at least one pixel includes a first electrode; a second electrode; and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer is configured to convert incident infrared light into electric charge. The photoelectric conversion layer has a first section and a second section. The first section is closer to the first electrode than the second section, and the second section is closer to the second electrode than the first section. At least one of the first section and the second section have a plurality of surfaces.

Light-receiving device, imaging device, and electronic apparatus

The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.

Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided.

Solid-state imaging device, method of manufacturing the same, and electronic apparatus

A resist composition including a resin component having more than 30 mol % of a structural unit represented by formula (a0-1), and an acid generator represented by formula (b1) in which Rrepresents a hydrogen atom, an alkyl group or a halogenated alkyl group; Varepresents an alkylene group; Rarepresents an acid dissociable group; Rrepresents an cyclic hydrocarbon group; Lrepresents &#x2014;O&#x2014;C(&#x2550;O)&#x2014; or &#x2014;C(&#x2550;O)&#x2014;O&#x2014;; Yrepresents a divalent linking group or a single bond; Vrepresents a fluorinated alkylene group; Rrepresents a fluorine atom or a hydrogen atom; provided that the total number of fluorine atoms contained in Vand Ris 2 or 3; and Mrepresents an m-valent organic cation. 

Resist composition and method of forming resist pattern

Growing community of inventors

Kawasaki, Japan

Tomoyuki Hirano