Tdk Corporation

Tomoyuki Goi

Takuya Adachi

Yasuyuki Hara

Masami Itakura

Fumio Uchikoba

Hisashi Kobuke

Hideya Matsubara

Yasumasa Harihara

Kenichi Tezuka

Hitoshi Hachiga

Hideaki Fujioka

Atsuhi Ajioka

Disclosed herein is an antenna module that includes an antenna component including a plurality of antenna elements and a ground conductor surrounding each of the plurality of antenna elements; and a metal member disposed adjacent to the ground conductors surrounding outermost ones of the plurality of antenna elements.

Antenna module

Disclosed herein is an antenna module that includes solder balls provided on a surface of the element body having an antenna element. The solder balls include a signal ball disposed at an intersection between the second row virtual line and the second column virtual line and first to fourth ground balls disposed, out of a plurality of intersections between the first to third row virtual lines and the first to third column virtual lines, at any of intersections other than those at which the signal ball is disposed. No solder ball is disposed, out of the intersections between the plurality of row and column virtual lines, at least at some of the plurality of intersections other than those at which the first signal ball or first to fourth ground balls are disposed.

An antenna device according to the present disclosure includes two wiring layers and an antenna layer. One of the two wiring layers is divided in the x-direction by a first slit extending in the y-direction, and the antenna layer is divided in the x-direction into first and second antenna areas by a second slit extending in the y-direction. The first and second slits overlap each other in the z-direction. One of the first and second slits is larger in width than the other one thereof. The antenna layer includes an antenna conductor formed in the first antenna area and another antenna conductor formed in the second antenna area.

Antenna device, communication apparatus having the same, and manufacturing method of antenna device

The present invention is provided with a high frequency module comprising a multilayered substrate, a power amplifier IC mounted on the upper surface of the multilayered substrate, first and second filters disposed substantially directly below the power amplifier IC in an inner layer of the multilayered substrate, and coupling-reducing ground vias disposed between the first filter and the second filter. At least the first filter is disposed substantially directly below the power amplifier IC. The coupling-reducing ground vias double as thermal vias for dissipating heat generated by the power amplifier IC.

High frequency module provided with power amplifier

A high frequency module incorporates a layered substrate, a plurality of elements mounted on a top surface of the layered substrate, and a metallic casing that covers these elements. The plurality of elements mounted on the top surface of the layered substrate include a band-pass filter element. The band-pass filter element includes a plurality of conductor layers for band-pass filter and a plurality of dielectric layers for band-pass filter that implement a function of a band-pass filter, but does not include any conductor layer that functions as an electromagnetic shield. A conductor layer for grounding that the layered substrate includes and the casing are each opposed to the band-pass filter element, and thereby function as an electromagnetic shield for the band-pass filter element.

Band-pass filter element and high frequency module

A high frequency switch module comprises an antenna port, a plurality of transmission signal ports, a plurality of reception signal ports, a high frequency switch, a plurality of LPFs and a plurality of phase adjusting lines. The high frequency switch allows one signal port among the transmission signal ports and the reception signal ports to be selectively connected to the antenna port. The high frequency switch includes a field-effect transistor made of a GaAs compound semiconductor. Each of the phase adjusting lines connects the high frequency switch to each of the LPFs. Each of the phase adjusting lines adjusts a phase difference between a progressive wave of a harmonic resulting from a transmission signal and produced at the high frequency switch and a reflected wave resulting from reflection of the progressive wave from each of the LPFs such that the power of a composite wave made up of the progressive wave and the reflected wave is made lower at the point of the high frequency switch.

High frequency switch module and multi-layer substrate for high frequency switch module

In a surface electrode structure on a ceramic multi-layer substrate having on the surface SAW device mounting surface electrodes for mounting flip chips as surface-acoustic-wave devices by gold-gold bonding and soldered parts mounting surface electrodes. Further, at least the lowermost layer is made of a sintered silver conductor which is partly buried in the ceramic multi-layer substrate, a nickel or a nickel alloy layer being contained as an intermediate layer, and the topmost layer being a gold layer. Thus, a surface electrode structure on a ceramic multi-layer substrate is suitable for both mounting of SAW devices by gold-gold bonding and mounting of other parts by soldering and which enable consistent mounting of individual parts using a ceramic multi-layer substrate to provide higher reliability.

Growing community of inventors

Tokyo, Japan

Tomoyuki Goi