Ngk Insulators, Inc.

Applied Materials, Inc.

Shin-etsu Chemical Co., Ltd.

Tomoyuki Fujii

Tsuneaki Ohashi

Ryusuke Ushikoshi

Hideyoshi Tsuruta

Hiroshi Takebayashi

Tetsuya Kawajiri

Taichi Nakamura

Akiyoshi Hattori

Mitsuru Ohta

Christopher F Lane

David Wingto Cheung

Tomonori Takahashi

Nobuo Tsuno

Mark A Fodor

Yasufumi Aihara

Akio Suzuki

Tetsuhisa Abe

Osamu Sakai

Yutaka Mori

Nobuyuki Tanahashi

Yasuyoshi Imai

The bonding material is formed of a cured sheet composed of an addition curable silicone adhesive agent, and the addition curable silicone adhesive agent contains an organopolysiloxane containing two or more vinyl groups per molecule; an organopolysiloxane resin containing a unit (hereinafter, 'M') represented by RSiO(R is a monovalent hydrocarbon group having 1 to 6 carbon atoms and containing no aliphatic unsaturated bond) and a unit (hereinafter, 'Q') represented by SiOin a molar ratio (M/Q ratio) equal to or more than 0.6 to equal to or less than 0.6 to 1.6; an organohydrogenpolysiloxane containing a silicon atom-bonding hydrogen atom; a platinum catalyst; and a heat conductive filler whose content falls within the range equal to or more than 20 vol % to equal to or less than to 50 vol %.

Bonding material and semiconductor supporting device

A bonding structure according to the present invention includes: a ceramic member including a hole; a terminal embedded in the ceramic member and including an exposed surface exposed to a bottom portion of the hole; a brazed bond layer formed in contact with the exposed surface of the terminal; and a connecting member inserted in the hole, and bonded to the terminal via the brazed bond layer. An inner diameter of the hole is larger than an outer diameter of the connecting member. A clearance is formed between the hole and the connecting member when the connecting member is inserted in the hole. A braze pool space is formed in a surface of the hole and has a substantially semicircular shape in a cross-sectional plane. The braze pool space is partially filled with a braze material.

Bonding structure and semiconductor device manufacturing apparatus

The present invention relates to a bonding structure, including: a ceramic member including a hole; a terminal embedded in the ceramic member, an exposed surface exposed to a bottom portion of the hole, and made of a refractory metal having a thermal expansion coefficient substantially equal to a thermal expansion coefficient of the ceramic member; a brazed bond layer including a first tantalum layer in contact with the exposed surface of the terminal, a gold layer formed on the first tantalum layer, and a second tantalum layer formed on the gold layer; and a connecting member inserted in the hole, bonded to the terminal via the brazed bond layer, and made of a refractory metal having a thermal expansion coefficient substantially equal to the thermal expansion coefficient of the ceramic member.

A bonding structure including: a ceramic member made of aluminum nitride and including a hole; a terminal embedded in the ceramic member, exposed to a bottom surface of the hole, and made of molybdenum; a brazed bond layer consisting of gold (Au) only; and a connecting member inserted in the hole, bonded to the terminal via the brazed bond layer, and made of molybdenum.

Bonding structure for a terminal of a susceptor of a semiconductor device manufacturing apparatus

A substrate supporting member includes: a plate-shaped ceramic body having a surface serving as a substrate supporting surface; a plate-shaped composite material body which is joined to a surface of the ceramic body opposite to the substrate supporting surface with a joint material interposed therebetween and the plate-shaped composite material body made of porous ceramic with pores filled with metal, the composite material body having a porosity of more than 0% and not more than 5%; and a metallic plate which is joined to a surface of the composite material body opposite to the surface joined to the ceramic body with a joint material interposed therebetween.

Substrate supporting member

A joined body includes a first ceramic member, a second ceramic member, and a joining layer which contains soft metal, and joins the first ceramic member and the second ceramic member to each other by being thermally compressed at a joining temperature lower than a solidus of the soft metal.

Joined body and manufacturing method for the same

A joining structure joining a ceramic substrate having a metal member buried therein and a power supply connector which supplies power to the metal member is provided. The joining structure includes a counterbore, a stress relaxation insert member, and a brazing member. The counterbore is formed in the ceramic substrate having a large-diameter part and a small-diameter part formed at a bottom center portion of the large-diameter part. At least a part of the metal member is exposed from a bottom of the small-diameter part. The stress relaxation insert member has a body part and a protrusion and is provided in the counterbore so that the body part and the protrusion are fitted into the large-diameter part and the small-diameter part, respectively. The brazing member connects the power supply connector to the stress relaxation insert member, and seals a gap between the counterbore and the stress relaxation insert member.

Joining structure between ceramic substrate and power supply connector

A method of fabricating a substrate placing stage includes the step of providing a plate-shaped ceramic base having a substrate placing surface on a side of the ceramic base. The method includes the step of providing a plate-shaped ceramic base formed of a composite material containing components of a ceramic material and an aluminum alloy. The method includes the step of inserting a joint material including an aluminum alloy layer between the ceramic base and the cooling member. The method includes the step of heating the joint material at a temperature in a range from TS &#xb0; C. to (TS-30) &#xb0;C. (TS &#xb0;C.: a solidus temperature of the aluminum alloy). The method includes the step of pressing substantially normally joint surfaces of the ceramic base and the cooling member, thereby joining the ceramic base and the cooling member via the joint material to obtain a joint layer including the aluminum alloy layer having a thickness in a range from 50 &#x3bc;m to 200 &#x3bc;m after joining.

Method of fabricating substrate placing stage

An object of the present invention is to provide a joined structure effective for preventing crack formation after thermal cycles. The joined structure has a ceramic member, a metal memberto be joined, and a metal fixed memberfixed to the ceramic memberand having an exposed faceexposed along the joining faceof the ceramic member. A joining layeris provided between the ceramic memberand the metal memberand between the exposed faceof the fixed memberand the metal member. The joining layerhas thicker and thinner portionsand. Alternatively, the joining layerhas a maximum thickness of 0.15 mm or more.

Joined structures of ceramics

A bonding member is provided, including, a ceramic member having a concave portion, a metal member having a convex portion corresponding to the concave portion of the ceramic member. A first bonding material joins a bottom portion of the concave portion of the ceramic member and a tip portion of the convex portion of the metal member. The first bonding material has a porous structure, including particles and a brazing filler metal, and covers a corner between tip and side portions of the metal member. A second bonding material including a brazing filler metal joins the side portion of the concave portion of the ceramic member and the side portion of the convex portion of the metal member.

Bonding member and electrostatic chuck

A joined body and method of producing the joined body are provided. A first member containing at least a ceramic and a second member containing at least one of a metal and a metal composite are joined with each other via a metal adhesive. The metal adhesive contains at least indium and at least one material containing at least a component capable of reducing the melting point of indium and is provided between the first and second members to provide a laminate. The laminate is heated at a temperature in a solid-liquid coexisting range of an alloy comprising indium and the indium melting point reducing component to join the first and second members.

Joined bodies and a method of producing the same

An electrostatic chuck and a method for manufacturing the same are provided. The electrostatic chuck has a bonded structure comprising a ceramic electrostatic chuck member, a metal member and a bonding layer. The bonding layer has at least a first outermost bonding layer joined to the ceramic electrostatic chuck member, a second outermost bonding layer joined to the metal member, and an intermediate polyimide layer disposed between the first and second outermost bonding layers. Each of the outermost bonding layers are made of a silicone layer or an acrylic.

Electrostatic chuck having bonded structure and method of manufacturing the same

A joined structure of a metal terminal and a ceramic member has a joining layer between the terminal and the ceramic member. The joining layer has a metal adhesive layer containing at least indium metal. The invention further provides a joined structure of a metal member and a ceramic member. The metal member has a tip face and a side face. A hollow is formed in the ceramic member. A joining layer is formed between a bottom surface facing the hollow and the tip face of the member, and further formed between a side wall surface facing the hollow and the side face of the member. The joining layer has a metal adhesive layer containing at least indium metal.

Joined structures of metal terminals and ceramic members, joined structures of metal members and ceramic members, and adhesive materials

An object of the present invention is to provide a novel semiconductor mounting system having a semiconductor mounting member, a metal member and a joining layer joining the mounting and metal members, to improve the flatness of a mounting surface and to control the temperature on the surface of a semiconductor. A semiconductor mounting system has a semiconductor mounting member a metal member and a joining layer joining the mounting member and metal member The metal member has a surface mounting a semiconductor. The adhesive sheet has a resin matrix and a filler dispersed in the resin matrix

Semiconductor mounting system

A method for producing a joined body comprising a supporting member made of a ceramic material for supporting a semiconductor wafer, a metal member and a joining layer for joining the supporting and metal members is provided. A first metal film is formed on a joining surface of the supporting member. A second metal film is formed on a joining surface of the metal member. A metal adhesive is placed between the first and second films to provide an assembly. The assembly is then heated at a temperature not higher than a melting point of the metal adhesive while the assembly is subjected to isostatic pressing, so that the supporting and metal members are joined by diffusion joining.

Growing community of inventors

Nagoya, Japan

Tomoyuki Fujii