Tokyo Ohka Kogyo Co., Ltd.

Promerus, Lcc

Tomoyuki Ando

Larry Funderburk Rhodes

Pramod Kandanarachchi

Kotaro Endo

Keita Ishiduka

Chun S Chang

Lawrence D Seger

Takuma Hojo

Kiyoshi Ishikawa

Hirofumi Imai

Koki Tamura

Daisuke Kawana

Tomotaka Yamada

Takako Hirosaki

Ryoji Watanabe

Yasushi Washio

Sho Abe

Ryuma Mizusawa

Komei Hirahara

Hiroshi Shimbori

Toshiaki Tachi

Takayuki Hosono

Eiichi Shimura

Tokunori Yamadaya

Ryosuke Nakamura

Taako Hirosaki

A substrate bonding method which enables forming a precision fine space using a method that is simpler and easier than conventional methods; and a laminated body production method that uses the substrate bonding method. This substrate bonding method includes disposing a first substrate on a photoresist pattern formed on a support film so as to bring the first substrate into contact with a surface of the photoresist pattern located on the side opposite to the support film, and pressure-bonding the support film, the photoresist pattern, and the first substrate; releasing the bonded support film after the pressure-bonding; and disposing a second substrate on the photoresist pattern so as to bring the second substrate into contact with the surface of the photoresist pattern located on the side opposite to the first substrate, and pressure-bonding the first substrate, the photoresist pattern, and the second substrate.

Substrate bonding method and laminated body production method

A negative type photosensitive resin composition containing an epoxy group-containing resin; a metal oxide; and a cationic polymerization initiator (I). The cationic polymerization initiator (I) contains one or more of a compound represented by Formula (I1) and a compound represented by Formula (I2). In Formula (I1), Rto Rrepresent an aryl group which may have a substituent or a fluorine atom. In Formula (I2), Rrepresents a fluorinated alkyl group which may have a substituent or a fluorine atom. A plurality of R's may be the same as or different from one another. q represents an integer of 1 or greater, and Q's each independently represent a q-valent organic cation. 

Negative type photosensitive resin composition, photosensitive resist film, pattern forming method, cured film, and method of producing cured film

A negative photosensitive composition including an epoxy group-containing resin; and a cationic polymerization initiator containing one or more types of the following cationic polymerization initiators: a compound represented by formula (b0-1) and a compound represented by formula (b0-2), and a cationic polymerization initiator which generates an acid having a pKa of &#x2212;3 or more. In the formulae, Rto Rare each independently a fluorine atom or an aryl group which may have a substituent, Ris a fluorine atom or a fluorinated alkyl group which may have a substituent, a plurality of R's may be the same as or different from each other, q is an integer of 1 or more, and Q's are each independently a q-valent organic cation. 

Negative photosensitive composition and pattern formation method

A method for producing a thick film photoresist pattern including laminating a thick photoresist layer including a chemically amplified positive-type photoresist composition for thick film on a support; irradiating the thick photoresist layer; and developing the thick photoresist layer to obtain a thick film resist pattern; in which the composition includes an acid generator, a resin whose alkali solubility increases by the action of an acid, and an organic solvent having a boiling point of at least 150&#xb0; C. and a contact angle on a silicon substrate of no greater than 18&#xb0;, in an amount of at least 40% by mass with respect to total mass of the organic solvent.

Method for producing thick film photoresist pattern

Embodiments of the present invention relate generally to non-self imagable and imagable norbornene-type polymers useful for immersion lithographic processes, methods of making such polymers, compositions employing such polymers and the immersion lithographic processes that make use of such compositions. More specifically the embodiments of the present invention are related to norbornene-type polymers useful for forming imaging layer and top-coat layers for overlying such imaging layers in immersion lithographic process and the process thereof.

Norbornene-type polymers, compositions thereof and lithographic processes using such compositions

A method of forming a resist pattern that includes: applying a positive chemically amplified resist composition to a support to form a first resist film, exposing a region on a portion of the first resist film, performing a post exposure bake treatment and then performing developing to form a first resist pattern, and applying a negative chemically amplified resist composition to the support having the first resist pattern formed thereon, thereby forming a second resist film, exposing a region of the second resist film that includes the positions in which the first resist pattern has been formed, performing a post exposure bake treatment at a bake temperature that increases the solubility of the first resist film in an alkali developing solution and decreases the solubility of the second resist film in an alkali developing solution, and then performing developing to form a resist pattern.

Method of forming resist pattern

A method of forming a resist pattern including: forming a resist film on a substrate using a chemically amplified negative resist composition; forming a latent image of a first line and space pattern by subjecting the resist film to first exposure through a photomask; forming a latent image of a second line and space pattern so as to intersect with the latent image of the first line and space pattern by subjecting the resist film to second exposure through a photomask; and subjecting the resist film to developing to form a hole pattern in the resist film.

A positive resist composition having excellent size controllability, and a resist pattern forming method are provided. This positive resist composition contains a resin component (A) comprising an alkali soluble constituent unit (a1) which comprises a constituent unit (a11) derived from (&#x3b1;-methyl)hydroxystyrene, and a constituent unit (a2) which has an acid dissociable dissolution inhibiting group including an acid dissociable dissolution inhibiting group (II) represented by the following general formula (II) and/or a specific chain acid dissociable dissolution inhibiting group (III); an acid generator component (B) which generates an acid upon exposure; and preferably contains an aromatic amine (C). 

Positive resist composition and resist pattern forming method

Embodiments of the present invention relate generally to non-self imageable and imageable norbornene-type polymers useful for immersion lithographic processes, methods of making such polymers, compositions employing such polymers and the immersion lithographic processes that make use of such compositions. More specifically the embodiments of the present invention are related to norbornene-type polymers useful for forming imaging layer and top-coat layers for overlying such imaging layers in immersion lithographic process and the process thereof.

Norbornene-type polymers, compositions thereof and lithographic process using such compositions

The negative resist composition of the present invention comprises a silsesguioxane resin (A) comprising a constituent unit (a1) represented by the following general formula (I) and a constituent unit (a2) represented by the following general formula (II), an acid generator component (B) which generates an acid upon exposure, and a crosslinking agent component (C): wherein Rrepresents a linear or branched alkylene group having 1 to 5 carbon atoms, and 

Negative resist composition

A positive resist composition that exhibits a large exposure margin, and excellent levels of resolution and dry etching resistance, as well as a method of forming a resist pattern that uses the positive resist composition. This resist composition includes a resin component (A), which contains acid dissociable, dissolution inhibiting groups and displays increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) contains a structural unit (a1) represented by a general formula (I) shown below, a structural unit (a2) in which a hydroxyl group within the above general formula (I) has been protected by substituting the hydrogen atom thereof with an acid dissociable, dissolution inhibiting group (II) represented by a general formula (II) shown below, and a structural unit (a3) in which a hydroxyl group within the above general formula (I) has been protected by substituting the hydrogen atom thereof with an acyclic acid dissociable, dissolution inhibiting group (III). 

Positive resist composition and method of forming resist pattern

Disclosed is a positive resist composition which can provide a positive resist composition and a resist pattern forming method, capable of forming a high resolution pattern with reduce LER, the positive resist composition comprising a resin component (A) which has acid dissociable, dissolution inhibiting groups and exhibits increased alkali solubility under the action of an acid, and an acid generator component (B) which generates an acid under exposure, wherein the resin component (A) contains a polymer compound (A1) having a structural unit (a1) derived from hydroxystyrene and a structural unit (a2) derived from an acrylate ester having acid dissociable, dissolution inhibiting groups, a fluorine atom or a fluorinated lower alkyl group being bonded at the &#x3b1;-position.

A lift-off positive resist composition capable of forming a fine lift-off pattern is provided. This composition comprises a base resin component (A) and an acid generator component (B) generating an acid under exposure, wherein the base resin component (A) is a silicone resin.

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Kawasaki, Japan

Tomoyuki Ando