Kanegafuchi Chemical Industry Co., Ltd.

Kanegafuchi Kagaku Kogyo Kabushiki Kaisha

Tomoyoshi Zenki

Yoshihisa Tawada

Minori Yamaguchi

Takehisa Nakayama

Satoru Murakami

Yoichi Hosokawa

Eiichi Yoshida

Tadashi Obayashi

Kenji Kobayashi

The invention relates to an image sensor for use in the facsimile device, image reader, digital scanner and the like. In this image sensor, the photodiodes and blocking diodes formed on an insulating board are insulated by a transparent interlayer insulating film and are connected in series and opposite polarity by coupling electrodes through contact holes in the transparent interlayer insulating film. This image sensor features a high reading speed and a low dark output noise.

Image sensor

In a light sensitive semiconductor unit having a plurality of light sensitive semiconductor cells connected in series, the light receiving area or size of the light sensitive semiconductor cells is increased as the distance from the center of the unit increases so that every light sensitive semiconductor cell can generate generally equal short circuit current even if the light intensity is decreased as the distance between the light sensitive semiconductor cell and light source increases, whereby a high operating voltage can be obtained.

Light sensitive semiconductor device

Strain sensor

Growing community of inventors

Kobe, Japan

Tomoyoshi Zenki