Hitachi High-tech Corporation

Tomoyo Sasaki

Takayasu Iwatsuka

Makoto Suzuki

Wen Zheng Li

Ryo Kadoi

Hideto Dohi

The charged particle beam apparatus includes a charged particle source generating a charged particle beam, a deflector deflecting the charged particle beam, a detector detecting secondary electrons emitted from an irradiation target in response to irradiation with the charged particle beam, and a processor system. The processor system (A) acquires a first time-series change in secondary electron detection-related quantity by repeatedly performing the following (A) and (A), (A) directly or indirectly, maintains or changes the control amount applied to the deflector to a first control amount, and (A) acquires the secondary electron detection-related quantity based on an output from the detector, and (B) acquires a time-series change in variation of the beam diameter of the charged particle beam based on the first time-series change.

Charged particle beam apparatus

The present disclosure provides a charged particle beam device capable of simultaneously achieving protection of a charged particle source against electrical discharging inside a charged particle gun and highly accurate control of the charged particle gun, for both DC and AC components. A charged particle gun according to the present disclosure is configured such that an extraction voltage and an acceleration voltage are superposed and supplied to a charged particle beam source, a wiring between the charged particle beam source and a voltage circuit is covered with first and second enclosures, the first enclosure is configured to be connected to an extraction electrode, and the second enclosure is configured to be connected to an acceleration electrode and to a reference voltage of the voltage circuit.

Charged particle gun and charged particle beam device

To provide a technique capable of measuring high-frequency electrical noise in a charged particle beam device. A charged particle beam deviceincludes an electron sourcefor generating an electron beam EB, a stagefor mounting a sample, a detectorfor detecting secondary electrons EBemitted from the sample, and a control unitelectrically connected to the electron source, the stage, and the detectorand can control the electron source, the stage, and the detector. Here, when the sampleis mounted on the stage, and a specific portionof the sampleis continuously irradiated with the electron beam EBfrom the electron source, the control unitcan calculate a time-series change in irradiation position of the electron beam EBbased on an amount of the secondary electrons EBemitted from the specific portion, and can calculate a feature quantity for a shake of the electron beam EBbased on the time-series change in irradiation position. Further, the feature quantity includes a frequency spectrum.

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Tokyo, Japan

Tomoyo Sasaki