Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Tomoyasu Shojo

Muneyuki Fukuda

Naomasa Suzuki

Noritsugu Takahashi

Atsuko Fukada

Mitsugu Sato

Ichiro Tachibana

Nobuhiro Okai

Hiroshi Suzuki

Yasunari Sohda

Hajime Kawano

Hiroshi Makino

Akira Ikegami

Kenji Obara

Natsuki Tsuno

Momoyo Enyama

Daisuke Bizen

Hideto Dohi

Kazunari Asao

Hirohiko Kitsuki

Manabu Yano

To improve detection efficiency of secondary particles without increasing a size of a charged particle beam apparatus, a charged particle beam apparatus according to the invention includes: a charged particle beam source configured to irradiate a sample with a primary particle beam; a scanning deflector configured to scan and deflect the primary particle beam to a desired position of the sample; and a detector configured to detect secondary particles emitted from the desired position. The charged particle beam apparatus further includes: a focusing lens electrode arranged coaxially with the primary particle beam and configured to generate a focusing electric field that is an electric field that focuses a trajectory of the secondary particles; and a mesh electrode configured to reduce leakage of the focusing electric field on a trajectory of the primary particle beam.

Charged particle beam apparatus

Provided is a charged particle beam apparatus which includes a charged particle source, a sample table on which a sample is placed, a charged particle beam optical system that includes an objective lens and emits a charged particle beam emitted from the charged particle source onto the sample, a plurality of detectors which detect secondary particles emitted from the sample when being irradiated with the charged particle beam, and a rotation member which magnetically, electrically, or mechanically changes a detected azimuth angle of the secondary particles emitted from the sample.

In the present invention, a charged particle beam device has a charged particle source (), a first condenser lens () arranged downstream from the charged particle source (), an aperture () arranged downstream from the first condenser lens (), and a second condenser lens () arranged downstream from the aperture (), wherein, when a sample () is to be irradiated at a second charged particle beam amount which is greater than a first charged particle beam amount, the first and second condenser lenses are controlled such that a charged particle beam is formed downstream from the aperture (), and such that the focal point of the second condenser lens does not vary between the first charged particle beam amount and the second charged particle beam amount.

Charged particle beam device and detection method using said device

In order to provide a charged particle beam apparatus capable of high resolution measurement of a sample at any inclination angle, a charged particle beam apparatus for detecting secondary charged particles () generated by irradiating a sample () with a primary charged particle beam () is provided with a beam tilt lens () having: a yoke magnetic path member () and a lens coil () to focus the primary charged particle beam () on the sample (); and a solenoid coil () configured to arrange the upper end on the side surface of the yoke magnetic path member () and arrange the bottom end between the tip end of the pole piece of the yoke magnetic path member () and the sample () in order to arbitrarily tilt the primary charged particle beam () on the sample ().

A lower pole piece of an electromagnetic superposition type objective lens is divided into an upper magnetic path and a lower magnetic path. A voltage nearly equal to a retarding voltage is applied to the lower magnetic path. An objective lens capable of acquiring an image with a higher resolution and a higher contrast than a conventional image is provided. An electromagnetic superposition type objective lens includes a magnetic path that encloses a coil, a cylindrical or conical booster magnetic path that surrounds an electron beam, a control magnetic path that is interposed between the coil and sample, an accelerating electric field control unit that accelerates the electron beam using a booster power supply, a decelerating electric field control unit that decelerates the electron beam using a stage power supply, and a suppression unit that suppresses electric discharge of the sample using a control magnetic path power supply.

Charged particle beam apparatus permitting high-resolution and high-contrast observation

A charged-particle-beam device is characterized in having a control value for an aligner coil () being determined by: a coil current and an electrode applied-voltage at a control value for objectives (), which is an electromagnetic-field superposition lens; a control value for image-shift coils (); and the acceleration voltage of the charged-particle-beam. By doing this, it has become possible to avoid image disturbances that occur on images to be displayed at boundaries between charged areas and non-charged areas, and provide a charged-particle-beam device that obtains clear images without any unevenness in brightness.

Charged-particle microscope

This charged particle beam microscope is characterized by being provided with selection means () for a measurement processing method for detected particles () and by this means selecting a different measurement processing method for a scanning region with a large number of secondary electrons () emitted from a sample () and for a region with a small number of secondary electrons. Thus, in sample scanning using a charged particle beam microscope, an image in which the contrast of bottom holes and channel bottoms with few emitted secondary electrons is emphasized and images that emphasize shadow contrast can be acquired in a short period of time.

Charged particle beam microscope

A system is provided that realizes both reduction in coordinate error and improvement in throughput and allows observation of a micro-defect. The system includes: a function of measuring an amount of displacement between preliminarily calculated coordinates and an actual specimen position; a function of optimizing a coordinate correction formula so as to minimize the amount of displacement from the measured amount of displacement; and a function of calculating variation of displacement between the preliminarily calculated coordinates and the actual specimen position by statistical processing. When a value of coordinate variation is sufficiently small with respect to the field of view of an image for observation, which is to be a defect observation image, the system acquires only the image for observation without performing acquisition of an image for search, which is to be a defect search image.

Defect review system and method, and program

Charged particle beam apparatus permitting high resolution and high-contrast observation

An electron beam apparatus which includes a sample stage on which a sample is placed, and an electron optical system. The electron optical system includes an electron gun that generates a primary electron beam, an immersion objective lens that converges the primary electron beam on the sample, an E&#xd7;B deflector that separates a secondary particle, which is generated from irradiation of the primary beam to the sample, from an optical axis of the primary beam, a reflecting member to which the secondary particle collides, an assist electrode which is located under the reflecting member, a plurality of incidental particle detectors that selectively detect a velocity component and an azimuth component of a ternary particle which is generated by the secondary particle colliding to the reflecting member, and a center detector that is located above the reflecting member.

Electron beam apparatus and electron beam inspection method

Disclosed herewith is a charged particle beam apparatus capable of controlling each of the probe current and the objective divergence angle to obtain a desired probe current and a desired objective divergence angle in accordance with the diameter of the subject objective aperture. The apparatus is configured to include an objective aperture between first and second condenser lenses to calculate and set a control value of a first condenser lens in accordance with the diameter of the hole of the objective aperture so as to obtain a desired probe current and calculate a control value of a second condenser lens setting device in accordance with the diameter of the hole of the objective divergence angle and the control value of the second condenser lens setting device, thereby setting the calculated control value for the second condenser lens setting device to control the objective divergence angle.

A lower pole piece of an electromagnetic superposition type objective lens is divided into an upper magnetic path and a lower magnetic path. A voltage nearly equal to a retarding voltage is applied to the lower magnetic path. An objective lens capable of acquiring an image with a higher resolution and a higher contrast than a conventional image is provided. An electromagnetic superposition type objective lens includes a magnetic path that encloses a coil, a cylindrical or conical booster magnetic path that surrounds an electron beam, a control magnetic path that is interposed between the coil and sample, an accelerating electric field control unit that accelerates the electron beam using a booster power supply, a decelerating electric field control unit that decelerates the electron beam using a stage power supply, and a suppression unit that suppresses electric discharge of the sample using a control magnetic path power supply. Thus, whether landing energy of an electron beam varies widely, the electron beam can be focused with the electromagnetic superposition type objective lens approached to the sample.

An electron beam apparatus which includes a sample stage on which a sample is placed, and an electron optical system. The electron optical system includes an electron gun that generates a primary electron beam, an immersion objective lens that converges the primary electron beam on the sample, an ExB deflector that separates a secondary particle, which is generated from irradiation of the primary beam to the sample, from an optical axis of the primary beam, a reflecting member to which the secondary particle collides, an assist electrode which is located under the reflecting member, a plurality of incidental particle detectors that selectively detect a velocity component and an azimuth component of a ternary particle which is generated by the secondary particle colliding to the reflecting member, and a center detector that is located above the reflecting member.

An object of the invention is to be able to select easily and quickly inspection recipes which are appropriate to samples from any number of inspection recipes. A calculating device displays a plurality of inspection recipes on the GUI. An inspection recipe includes settings for controlling charged particle columns which irradiate charged particles on samples with a plurality of characteristics. Plural inspection recipes are arranged and displayed on a coordinate system which is specified by a plurality of axes having characteristic values (robustness variable of charge up, throughput of defect inspection, and accuracy of defect inspection) which have mutually trade-off relationships.

Growing community of inventors

Kokubunji, Japan

Tomoyasu Shojo