Kabushiki Kaisha Toshiba

Tomoyasu Kudo

Masaki Kamimura

Kazutaka Ishigo

Kenichi Yoshino

Shinji Uya

A solid-state imaging device according to embodiments of the present disclosure includes a light receiving unit, a first charge holding film, and a second charge holding film. The light receiving unit converts the incident light to an electric current. The first charge holding film is formed above the light receiving unit and holds electric charges. The second charge holding film is formed on the first charge holding film and holds electric charges. Further, concentration of oxygen in the second charge holding film is higher than concentration of oxygen in the first charge holding film.

Solid state imaging device having a pair of charge holding films

According to one embodiment, a method for manufacturing a semiconductor device includes implanting impurity ions to a semiconductor layer in which an electrode is embedded; forming a light absorption film which absorbs laser light at a side of the electrode to which the laser light is irradiated; and activating the impurity ions by irradiating laser light to the semiconductor layer at which the light absorption film is formed in the forming.

Method for manufacturing semiconductor device

A manufacturing apparatus for a semiconductor device that includes a bake chamber for a wafer with a coating film formed thereon to be baked at a predetermined temperature, a cooling chamber connected to the bake chamber, a first carrying unit for the baked wafer to be carried in the cooling chamber, a first temperature control unit for the wafer carried by the first carrying unit to be cooled down, and an unloading gate for unloading the wafer cooled down from the cooling chamber.

Manufacturing apparatus for semiconductor device and manufacturing method of semiconductor device

According to an aspect of the invention, there is provided a semiconductor device including a semiconductor substrate, a p-type impurity diffusion layer formed on the semiconductor substrate, and Ni silicide formed on the diffusion layer, wherein an alignment mark for lithography is formed on the Ni silicide.

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Oita, Japan

Tomoyasu Kudo