National Institute of Advanced Industrial Science and Technology

Shizuoka University

Kohoku Kogyo Co., Ltd.

Tomoya Yoshida

Youichi Sakakibara

Takashi Kato

Takashi Nishi

Masahiko Mori

Masayoshi Nagao

Katsuhiro Iwasaki

Jun Yamamoto

Yuki Atsumi

Yoichiro Neo

Provided is an optical module comprising a substrate, a holder, and a spacer. An optical waveguide is formed in/on the substrate and end parts thereof are protruding from one surface of the substrate. The holder holds an optical fiber and exposes one end part of the optical fiber in such a manner that the one end part of the optical fiber can be optically connected to the end parts of the optical waveguide at a side of one surface of the holder. The spacer is held the one surface of the substrate and the one surface of the holder.

Optical fiber module and method for manufacturing the same

A method is provided for processing a silicon-based wire optical waveguide, by which an optical transmission loss of the silicon-based wire optical waveguide due to ion irradiation with high energy is suppressed, and an end portion of the silicon-based wire optical waveguide that is three-dimensionally curved in a self-aligning manner is obtained. According to the method a protective film is selectively formed on the silicon-based wire optical waveguide exclusive of the end portion of the silicon-based wire optical waveguide; and ions are implanted to the silicon-based wire optical waveguide in a particular direction, so as to curve the end portion of the silicon-based wire optical waveguide to the particular direction in a self-alignment manner.

Method for processing silicon-based wire optical waveguide

In a field emission device, the fundamental cause of spherical aberration in an emitted electron beam trajectory is eliminated or mitigated. An aberration suppressor electrodeis provided at a lower vertical position than an extraction gate electrodeso its opening inner peripheral edgefaces a position near an emitter tip. The vertical position of the opening inner peripheral edgeof the aberration suppressor electrodeis made lower than the vertical position of the emitter tip. An aberration suppressing voltage Vsp is applied to the aberration suppressor electrodethat is a lower voltage than the potential of the emitterand controls equipotential lines near the emitter tipto make them parallel.

Field emission device

Growing community of inventors

Tsukuba, Japan

Tomoya Yoshida