Canon Kabushiki Kaisha

Tomoya Yoneda

Tetsunobu Kochi

Toru Koizumi

Shigetoshi Sugawa

Hidekazu Takahashi

Masanori Ogura

Shunsuke Inoue

Yuichiro Yamashita

Hiroki Hiyama

Katsuhito Sakurai

Isamu Ueno

To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area.

Solid-state imaging device

An image pickup apparatus is provided, which comprises a plurality of image pickup areas formed on a same semiconductor chip and arranged in the horizontal and the vertical directions, each image pickup area having a plurality of pixels arranged in the horizontal and the vertical directions, a plurality of vertical scanning circuits which sequentially scan pixels in the vertical direction to scan a plurality of image pickup areas in the vertical direction independently from each other, a plurality of lenses, at least one of which is provided in each of the plurality of image pickup areas and which focuses light to form an image on the image pickup areas, and a driving circuit which drives the plurality of vertical scanning circuits so that at least a part of a scanning period of each of the plurality of vertical scanning circuits overlaps with each other.

Image pickup apparatus

An image pickup device includes pixels each including a photoelectric conversion unit and a transfer switch for transferring a photoelectric conversion signal generated by the photoelectric conversion unit, and a driver for applying a pulse to the transfer switch a plurality of times when the signal generated by the photoelectric conversion unit is transferred via the transfer switch.

Image pickup device

Amplification-type solid state imaging device with reduced shading

An object of the invention is to control a saturation electric charge quantity of a photodiode within a chip, thereby to drive a solid-state image sensing device adequately. The solid-state image sensing device according to the present invention comprises the photodiode as a photo-electric converting device and an overflow drain device controlled corresponding to the saturation electric charge quantity of the photodiode, both of which are provided within the same chip.

Solid-state image sensing device

Growing community of inventors

Chiba-ken, Japan

Tomoya Yoneda