Showa Denko K.k.

Showa Aluminum Corporation

Murata Manufacturing Co., Ltd.

Resonac Corporation

Tomoya Utashiro

Kiyoshi Tada

Kurata Awaya

Kenji Tomita

Yoshinori Ito

Masayuki Noguchi

Keisuke Fukada

Naoto Ishibashi

Hironori Atsumi

Eiji Komazawa

Jia Yu

Kenki Kobayashi

The invention provides a SiC single crystal production apparatus with high uniformity of temperature distribution in a crystal growth vessel. The SiC single crystal production apparatus includes a crystal growth vessel containing SiC raw material; an insulation part covering the periphery of the crystal growth vessel; a heater used to heat the crystal growth vessel; and a holding member used to hold the crystal growth vessel, wherein the crystal growth vessel is held in a suspended state by the holding member.

SiC single crystal production apparatus

A wafer supporting mechanism including: a wafer supporting table; and a movable part supported by the wafer supporting table, wherein the wafer supporting table includes a wafer supporting portion for transfer that stands up from a first surface opposing a back surface of a wafer to be placed and is provided further toward an inner side than an outer peripheral edge of the wafer to be placed, and the movable part includes a wafer supporting portion for film formation that is positioned further toward an outer peripheral side of the wafer to be placed than the wafer supporting portion for transfer and is relatively movable with respect to the wafer supporting table in a standing direction of the wafer supporting portion for transfer.

Wafer supporting mechanism, chemical vapor deposition apparatus, and epitaxial wafer manufacturing method

Provided is a sheet press molding method by which a molded product having a small plate thickness deviation is obtained. Such a sheet press molding method is provided with a process in which a molded product () having a recess and protrusion pattern portion (), to which a recess and protrusion pattern () is transferred, is formed by pressurizing a sheet-shaped material () including 60 vol. % to 95 vol. % of a filler and a resin composition using a pair of molds () having the predetermined recess and protrusion pattern () composed of recessed portions (, and) and protrusion portions (, and) in at least one of a pair of the molds, in which the mold provided with a dummy pattern () composed of dummy protrusion portions () that offset the difference between the total volume of the protrusion portions (, and) formed on the inside () and the total volume of the recessed portions (, and) disposed between the protruding portions (, and) and the side surfaces () of the inside () and the recessed portions (, and) disposed between the protruding portions (, and) on the inside () is used as a pair of the molds ().

Sheet press molding method and method of manufacturing fuel cell separator

The present invention relates to a capacitor chip and a solid electrolytic capacitor, wherein in a capacitor chip in which one or more capacitor element is laminated on a metal lead frame to carry electricity and the whole is encapsulated with resin, a laminated body is located within a certain definite range. The present invention enables to increase the capacitance of a capacitor by broadening the allowable range of the total thickness of the laminated capacitor chips without generating defective appearance of the laminated solid electrolytic capacitor.

Capacitor chip and method for manufacturing same

A solid electrolytic capacitor, including a stack of solid electrolytic capacitor elements each having an anode part and a cathode part. The stacked structure is such that cathode parts of solid electrolytic capacitor elements are stacked one on another to have some misalignment between the stacked elements. The capacitor preferably has a structure in which one end part of the cathode part of at least one of the solid electrolytic capacitor elements stacked on another element is more prominent or retracted than that of the element below.

Solid state electrolyte capacitor and manufacturing method thereof

A magnetic hard disc substrate made of an aluminum alloy for memory devices such as a computer must correspond to an improved structure in which the interval between a head and a medium is made narrower to attain high density recording. In order to prevent head crash, it is required that the magnetic hard disc substrate have a smooth surface and decreased defects. The present invention provides a process for manufacturing a magnetic hard disc substrate made of an aluminum alloy which satisfies the above requirements and also provides a disc substrate which has a surface roughness Ra&lE;0.5 nm and is free from abrasive flaws with a depth of 5 nm or more and from micro-waviness or provides a disc substrate which has a surface roughness Ra&lE;5 angstroms and a surface roughness Rmax&lE;80 angstroms and in which the number of scratches with a depth of 50 angstroms or more is 5 or less and the number of pits with a depth of 50 angstroms or less is 5 or less in the surface.

Magnetic hard disc substrate and process for manufacturing the same

A magnetic hard disc substrate made of an aluminum alloy for memory devices such as a computer must correspond to an improved structure in which the interval between a head and a medium is made narrower to attain high density recording. In order to prevent head crash, it is required that the magnetic hard disc substrate have a smooth surface and decreased defects. The present invention provides a process for manufacturing a magnetic hard disc substrate made of an aluminum alloy which satisfies the above requirements and also provides a disc substrate which has a surface roughness Ra.ltoreq.0.5 nm and is free from abrasive flaws with a depth of 5 nm or more and from micro-waviness or provides a disc substrate which has a surface roughness Ra.ltoreq.5 angstroms and a surface roughness Rmax.ltoreq.80 angstroms and in which the number of scratches with a depth of 50 angstroms or more is 5 or less and the number of pits with a depth of 50 angstroms or less is 5 or less in the surface.

In a method of polishing a Ni--P plated aluminum alloy memory disk substrate, the present invention provides a polishing method which can efficiently form a good polished surface having slight polishing flaws, restrain the generation of a defect other than the polishing flaws and has a high productivity. That is, in the method according to the present invention, an alumina abrasive grain is used as a polishing compound. The present invention solves the problem by dividing the polishing process into two steps. In the first step, a first polishing is performed in which the main work pressure is 80 g/cm.sup.2 or more and the amount of polishing is 1 .mu.m or more. A second polishing is then peformed in which the main work pressure is 80 g/cm.sup.2 or less, preferably 50 g/cm.sup.2 or less, and the amount of one-sided polishing is 2 .mu.m or less. A final finish polishing is performed for 10-60 seconds prior to the completion of the second polishing step in which the main work pressure is 30 g/cm.sup.2 or less and the average relative velocity of the substrate and polishing cloth is reduced to 50 cm/s or less. In the present invention, the supply of polishing slurry and cleaning solution is preferably stopped during the final finish polishing step.

Growing community of inventors

Oyama, Japan

Tomoya Utashiro