Socionext Inc.

Tomoya Tsuruta

Hideyuki Komuro

Toshio Hino

Tomoyuki Yamada

Yasuhiro Nakaoka

Morimi Arita

A cell row includes an inverter cell having a logic function and a termination cell having no logic function. The termination cell is arranged at one of two ends of the cell row. A gate line and dummy gate lines are arranged in the same layer in a Z direction. Local interconnects are arranged in the same layer in the Z direction. Local interconnects are arranged in the same layer in the Z direction.

Semiconductor integrated circuit device

In a power line structure for supplying power to standard cells, buried power lines extending in the X direction are placed at a given spacing in the Y direction. A local power line extending in the Y direction is connected with the buried power lines. Metal power lines extending in the X direction are formed in an upper-layer metal interconnect layer and connected with the local power line. The spacing of placement of the metal power lines in the Y direction is greater than the spacing of placement of the buried power lines.

Characteristics of each transistor in a semiconductor device including a transistor of a memory cell are measured by an ASV monitoring circuit, a power supply voltage supplied to the semiconductor device is determined based on the measured characteristics of the transistor, a data read-out speed of the memory cell under the determined power supply voltage supplied is measured while changing a signal level of a word line by an SRAM word line monitoring circuit, the signal level of the word line is determined by comparing the measured data read-out speed of the memory cell and a specification range of the memory cell, and the signal level of the word line is appropriately set at the power supply voltage applied by the ASV.

Adjustment method of signal level in semiconductor device and semiconductor device

A ring oscillator includes a plurality of ring-connected delay circuits. At least one of the plurality of delay circuits has an SRAM cell and a path circuit connected in parallel to the SRAM cell. The SRAM cell outputs an output signal from a second node to the delay circuit in the next stage within the plurality of delay circuits in response to one of rise transition and fall transition of a signal to be input to a first node from the delay circuit in the previous stage within the plurality of delay circuits. The path circuit outputs an output signal to the delay circuit in the next stage in response to the other transition of the one of transitions.

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Koganei, Japan

Tomoya Tsuruta