Kabushiki Kaisha Toshiba

Tomoya Sanuki

Hidetoshi Koike

Osamu Fujii

Atsushi Nakayama

Kaoru Hiyama

A radiation detector includes a first detection unit including a first radiation entrance region into which incoming radiation enters and in which first photoelectric conversion elements are arranged. The radiation detector also includes a second detection unit including a second radiation entrance region. The first detection unit detects an occurrence position of a first interaction and a track of recoil electron by using the first photoelectric conversion elements. The second detection unit detects an occurrence position of a second interaction resulting from the scattered radiation. A position of a radiation source is measured by the occurrence positions of the first and second interactions and the track of the recoil electron.

Radiation detector, radiation detection module and radiation detection method

A semiconductor device includes a substrate having a first area and a second area adjacent to the first area, a first silicon layer provided on the substrate in the first area, a relaxed layer which is provided on the substrate in the second area and which has a lattice constant greater than a lattice constant of the first silicon layer, and a strained-Si layer which is provided on the relaxed layer and which has a lattice constant substantially equivalent to the lattice constant of the relaxed layer.

Semiconductor device and manufacturing method thereof

A semiconductor device comprises a semiconductor substrate, a plurality of transistors provided in the semiconductor substrate, and an isolation region for isolating the plurality of transistors to one another, the isolation region being comprised of an isolating insulation film, wherein a crystal structure of at least a part of the isolating insulation film is broken.

Semiconductor device

A semiconductor device includes a semiconductor substrate having an element region, and an element isolation region formed around the element region, the element isolation region being formed of an insulation material having a higher thermal expansion coefficient than the element region.

Since at least a portion of a trench capacitor electrode is formed by a metal, the electrical sheet resistance of the electrode can be lowered, and the signal propagation time prolonged by CR delay can be shortened. This can reduce the read/write time. The formation of a buried gate electrode can realize a reduction of the cell area, which is required in a DRAM- and a DRAM/logic-embedded device. This can increase the gate length and reduce the short channel effect. Since an insulating protective film is deposited on the gate electrode, a bit line contact can be formed in self-alignment.

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Yokohama, Japan

Tomoya Sanuki