Nissan Chemical Industries Limited

Nissan Chemical Corporation

Tomoya Ohashi

Takahiro Kishioka

Yuki Usui

Shigeo Kimura

Hiroto Ogata

Hirokazu Nishimaki

Yasushi Sakaida

Yoshiomi Hiroi

Makiko Umezaki

Yuto Hashimoto

Daisuke Sakuma

Suguru Sassa

Taito Nishino

Satoshi Takei

Hikaru Tokunaga

Toyoshiro Yoshida

A method for manufacturing a wafer having a functional film, with an outer peripheral part of a top face of the wafer annularly exposed, the method including: spin-coating a high-viscosity coating material that contains a functional film constituent over the top face of the wafer to form a coating film; subsequently, supplying a cleaning liquid to the outer peripheral part of the top face of the wafer and kept rotated to remove the coating film on the outer peripheral part of the top face of the wafer; subsequently, heating the coating film on the wafer to form a fluidity suppressed film; subsequently, supplying a cleaning liquid to the outer peripheral part of the top face of the wafer having the fluidity suppressed film and kept rotated to remove the fluidity suppressed film on the top face of the wafer; and subsequently, heating the fluidity suppressed film on the wafer.

Method for manufacturing wafer having functional film

A method for producing a coating film-forming composition for lithography, including a step for passing a liquid through a filter cartridge. The filter cartridge is obtained by layering more than one type of filtration base fabrics or winding same around a hollow inner tube, wherein: the fabrics are non-woven fabrics in which metal-adsorbing groups are chemically bonded to polyolefin fibers; the fabrics contain non-woven fabric layers A and B; layer A is configured from polyolefin fibers to which sulfonic acid groups are chemically bonded as metal-adsorbing groups; and layer B is configured from polyolefin fibers to which at least one type selected from among amino groups, N-methyl-D-glucamine groups, iminodiacetic acid groups, iminodiethanol groups, amidoxime groups, phosphoric acid groups, carboxylic acid groups and ethylenediamine triacetic acid groups chemically bonded as metal-adsorbing groups. Thus, the amount of metal impurities that are the cause of minute defects on a wafer can be reduced.

Method for producing coating film-forming composition for lithography

A composition for forming protective films against aqueous hydrogen peroxide solutions, including: a compound of the following formula (1a) or formula (1b) or a compound having a substituent of the following formula (2) and having a molecular weight of 300 or more and less than 800 or a weight-average molecular weight of 300 or more and less than 800; and a solvent, the composition containing the compound of the formula (1a) or formula (1b) of 0.1% by mass to 60% by mass or the compound having the substituent of the formula (2) of 10% by mass to 100% by mass, relative to solids excluding the solvent: (wherein Ris a Calkylene or alkenylene group or a direct bond, k is 0 or 1, m is an integer of 1 to 3, and n is an integer of 2 to 4.)

Protective film-forming composition

A composition for forming a protective film against basic aqueous hydrogen peroxide solution, including a crosslinker having, in one molecule, two or more groups at least one selected from the group consisting of a glycidyl group, a terminal epoxy group, an epoxycyclopentyl group, an epoxycyclohexyl group, an oxetanyl group, a vinyl ether group, an isocyanate group, and a blocked isocyanate, a compound having a group of Formula (1):  (wherein Xis a substituent reacting with the crosslinker, Ris a direct bond or a Calkylene group, Xis a Calkyl group, Calkoxy group, or fluoro group, a is an integer of 0-2, b is an integer of 1-3, c is an integer of 0-4, and b and c satisfy a relational expression of 1&#x2264;(b+c)&#x2264;5) on a side chain or a terminal and having a weight average molecular weight of 800 or more, and an organic solvent.

Compositions for forming a protective film against basic aqueous hydrogen peroxide solution, and pattern formation method

There is provided a composition for forming a resist underlayer film for lithography that can be used as an underlayer anti-reflective coating that decreases the reflection of irradiated light during exposure from a semiconductor substrate toward the photoresist layer that is formed on the semiconductor substrate and in particular, can be suitably used as a flattening film for flattening a semiconductor substrate having a recess and a project by embedding, in a lithography process for production of a semiconductor device. A resist underlayer film-forming composition for lithography comprising (A) an alicyclic epoxy compound having an alicyclic skeleton and one or more epoxy groups, and a light absorption moiety, in the molecule, (B) a thermal acid generator, and (C) a solvent.

Cationically polymerizable resist underlayer film-forming composition

Disclosed herein is a composition for forming a resist underlayer film used as an underlayer of a resist for nanoimprint in nanoimprint lithography of a pattern forming process by heat-baking, light-irradiation, or a combination thereof to form the resist underlayer film. The composition includes a silicon atom-containing polymerizable compound (A), a polymerization initiator (B), and a solvent (C). The polymerizable compound (A) may contain silicon atoms in a content of 5 to 45% by mass. The polymerizable compound (A) may be a polymerizable compound having at least one cation polymerizable reactive group, a polymerizable compound having at least one radical polymerizable reactive group, or a combination thereof, and the polymerization initiator (B) may be a photopolymerization initiator.

Composition for forming resist underlayer film for nanoimprint

A pattern forming method which uses a resist underlayer film having resistance to a basic aqueous hydrogen peroxide solution. A pattern forming method including: a first step of applying a resist underlayer film-forming composition containing a solvent and a polymer having a weight average molecular weight of 1,000 to 100,000 and an epoxy group on a semiconductor substrate that may have an inorganic film on the surface, followed by baking, to form a resist underlayer film; a second step of forming a resist pattern on the resist underlayer film; a third step of dry etching the resist underlayer film using the resist pattern as a mask to expose a surface of the inorganic film or the semiconductor substrate; and a fourth step of wet etching the inorganic film or the semiconductor substrate using the dry-etched resist underlayer film as a mask and a basic aqueous hydrogen peroxide solution.

Pattern forming method using resist underlayer film

A resist underlayer film-forming composition containing a copolymer having a structural unit of Formula (1) and a structural unit of Formula (2), a cross-linkable compound, a cross-linking catalyst, and a solvent. wherein A is a divalent organic group containing a triazine ring, Xis an &#x2014;S&#x2014; group or an &#x2014;O&#x2014; group, Q is a linear, branched, or cyclic hydrocarbon group having a carbon atom number of 1 to 15, the hydrocarbon group may have at least one sulfur atom or oxygen atom in a main chain and at least one hydroxy group as a substituent, n is 0 or 1, Rand Rare each independently a Calkylene group or a single bond, Z is a divalent group having at least one sulfur atom or oxygen atom, and when Xis an &#x2014;O&#x2014; group, Z is a divalent group having at least one sulfur atom.

Resist underlayer film-forming composition containing copolymer that has triazine ring and sulfur atom in main chain

There is provided a resist underlayer film-forming composition having excellent solubility in a solvent containing propylene glycol monomethyl ether as a main component. A resist underlayer film-forming composition comprising a polymer having a structural unit of Formula (1a) or Formula (1c) and a structural unit of Formula (1b) and a solvent containing more than 50% by mass of propylene glycol monomethyl ether, wherein in the polymer, the structural unit of Formula (1a) or Formula (1c) and the structural unit of Formula (1b) are arranged alternately. (In Formulae (1a) and (1b), Q is a phenylene group or a naphthylene group, m is 1 or 2, and each of n is independently 0 or 1).

Resist underlayer film-forming composition

There is provided a novel organic silicon compound that can be used for a silane coupling agent. An organic silicon compound of Formula (1): (where Ais Formula (2) or Formula (3): E is Formula (4) or Formula (5): Rand Rare each independently a Calkyl group, Ris a hydrogen atom or a methyl group, Rand Rare each independently a Calkyl group, m, n, and p are each independently an integer of 1 to 5, and q is an integer of 1 to 3).

Organic silicon compound and silane coupling agent containing the same

There is provided an ion implantation method, a composition for forming an ion implantation film and a resist underlayer film-forming composition. An ion implantation method including the steps of: forming a film by applying a film-forming composition containing a compound including an element in group 13, group 14, group 15, or group 16 and an organic solvent onto a substrate and baking the film-forming composition; and implanting impurity ions into the substrate from above through the film and introducing the element in group 13, group 14, group 15, or group 16 in the film into the substrate. The film-forming composition is a film-forming composition for ion implantation containing a compound including an element in group 13, group 14, group 15, or group 16, and an organic solvent. In addition, the underlayer film-forming composition contains a compound having at least two borate ester groups.

Film-forming composition and ion implantation method

A material forms a pattern by applying a photosensitive composition to a base material and drying to form a photosensitive coating and performing exposure and development, and a method for forming the pattern. A photosensitive composition includes water-soluble organic particles, and a solvent, wherein the solvent is a poor solvent for the water-soluble organic particles. Preferably, the water-soluble organic particles of the photosensitive composition includes a polymer which contains a unit structure (A) for forming organic particles, a unit structure (B) for forming interparticle crosslinkage, and a unit structure (C) for imparting dispersibility, and the photosensitive composition further includes a photoacid generator. In addition, the water-soluble organic particles of the photosensitive composition includes a polymer which contains the unit structure (A) for forming organic particles, the unit structure (B) for forming interparticle crosslinkage, the unit structure (C) for imparting dispersibility, and a unit structure (D) having a photoacid generating group.

Photosensitive organic particles

There is provided a composition for forming a monolayer or a multilayer on the substrate. A composition for forming a monolayer or a multilayer containing a silane compound of Formula (1A) or Formula (1B): [where Rs are independently a methyl group or an ethyl group; Xs are independently a Clinking group; and Zs are independently a Calkyl group or a phenyl group optionally having a substituent, where X optionally contains at least one oxygen atom or sulfur atom in the main chain thereof, and when Z is an alkyl group, at least one hydrogen atom of the alkyl group is optionally substituted with a fluorine atom] and an organic solvent.

Monolayer or multilayer forming composition

A resist underlayer film forming composition used in a lithography process includes: a polymer (A) containing a unit structure having a hydroxy group, a unit structure having a carboxy group, or combination thereof; a crosslinkable compound (B) having at least two vinyl ether groups; a photoacid generator (C); a Cfluoroalkylcarboxylic acid or a salt of the fluoroalkylcarboxylic acid (D); and a solvent (E). The polymer (A) includes a unit structure selected from unit structures of Formula (1), Formula (2), and Formula (3); 

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Toyama, Japan

Tomoya Ohashi